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SMMBD301LT1

Onsemi

SMMBD301LT1 by Onsemi

SMMBD301LT1 by Onsemi is a single Schottky mixer diode with a max power dissipation of 0.2W and a diode capacitance of 1.5pF. It operates in the very high frequency to ultra high frequency band, making it suitable for microwave applications requiring small outline surface mount packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 769 parts In-Stock

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Vyrian

USA . 527 parts In-Stock

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Problanco Electronics

Mexico . 7,592 parts In-Stock

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Kulean Microsystems

USA . 6,552 parts In-Stock

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Corphita

USA . 2,437 parts In-Stock

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TANS Electronics

Latvia . 1,838 parts In-Stock

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SupplyDigital Components

Austria . 1,490 parts In-Stock

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Corohmni

South Africa . 475 parts In-Stock

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UHIMA Technologies

Türkiye . 163 parts In-Stock

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Overview

Enhance your electronic designs with the SMMBD301LT1 by Onsemi, a top-quality Microwave Mixer & Detector Diode that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this diode is perfect for applications in the very high frequency to ultra high frequency range. With its small outline package style and surface mount configuration, this diode is versatile and easy to integrate into your projects. Experience the benefits of superior signal mixing and detection capabilities, along with a maximum power dissipation of 0.2W, ensuring long-lasting functionality. Upgrade your designs with the SMMBD301LT1 and elevate your electronic projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan for the product.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Allows for a wide range of frequencies to be handled, making this diode suitable for a variety of applications.

Surface Mount: YES

Facilitates easy installation and integration into circuit boards.

Maximum Diode Capacitance: 1.5 pF

Low capacitance ensures minimal signal loss and distortion.

Package Shape: RECTANGULAR

Optimal shape for efficient space utilization on circuit boards.

Diode Type: MIXER DIODE

Specifically designed for mixing multiple input signals, making it ideal for mixer applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them suitable for high frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes SMMBD301LT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMMBD301LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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