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SMMBD301LT3

Onsemi

SMMBD301LT3 by Onsemi

The Onsemi SMMBD301LT3 is a Schottky mixer diode with 1.5 pF capacitance, suitable for VHF to UHF applications. It features a small outline package with gull wing terminals and tin lead finish, making it ideal for surface mount designs requiring up to 0.2 W power dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,401 parts In-Stock

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Vyrian

USA . 584 parts In-Stock

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584

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SupplyDigital Components

Austria . 5,272 parts In-Stock

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TANS Electronics

Latvia . 3,903 parts In-Stock

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Kulean Microsystems

USA . 2,163 parts In-Stock

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Problanco Electronics

Mexico . 1,352 parts In-Stock

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Corphita

USA . 627 parts In-Stock

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UHIMA Technologies

Türkiye . 554 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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Overview

Enhance your electronic projects with the SMMBD301LT3 by Onsemi - a top-quality Microwave Mixer & Detector Diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for very high frequency to ultra high frequency applications. With its compact size and surface mount capability, it's perfect for a wide range of electronics projects. Experience the benefits of superior quality and precision engineering with the SMMBD301LT3, providing unmatched value for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This wide frequency band range allows for versatile use in a variety of applications that require high frequency signals.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially in compact electronic devices.

Maximum Diode Capacitance: 1.5 pF

Low diode capacitance helps in maintaining signal integrity, making this product ideal for high frequency applications.

Package Shape: RECTANGULAR

Rectangular shape provides efficient use of space and makes it easier to integrate into circuit designs.

No. of Terminals: 3

Having three terminals allows for flexible connectivity options, enabling versatile use in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and makes it suitable for compact electronic designs.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position allows for easy and secure mounting on circuit boards, enhancing overall product performance.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2W, this product can handle high power levels without overheating or malfunctioning.

Diode Type: MIXER DIODE

Specifically designed as a mixer diode, this product is optimized for mixing high frequency signals, ensuring efficient signal processing.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching, making this product suitable for high frequency signal applications.

Terminal Form: GULL WING

Gull wing terminal form provides stability and easy soldering, enhancing the reliability and durability of the product.

Diode Element Material: SILICON

Silicon diode element material offers good performance characteristics and reliability, ensuring consistent operation of the product.

Technical Specifications

Microwave Mixer & Detector Diodes SMMBD301LT3 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMMBD301LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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