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MBD301

Onsemi

MBD301 by Onsemi

Onsemi's MBD301 is a single microwave mixer diode with 1.5 pF capacitance, operating up to 125°C. Ideal for VHF to UHF applications, it features Schottky technology and can handle up to 0.28 W power dissipation in a cylindrical package.

Median Price

$359.210

Lifecycle Status

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Mouser Electronics

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DigiKey

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Component Electronics Inc.

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Forefront Electronics and Design

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Aztec Data Supply Inc.

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Ampacity Inc.

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AZTECH Wire

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Overview

Discover the power of the MBD301 by Onsemi, a top-quality microwave mixer and detector diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this product is perfect for very high frequency to ultra high frequency applications. With its advanced technology and durable construction, the MBD301 provides customers with exceptional value, ensuring smooth operation and precise results. Upgrade your projects with the innovative MBD301 and experience the difference it can make in your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and reliable, making it a great choice for long-term use.

Config: SINGLE

The single configuration simplifies setup and operation, ideal for straightforward applications.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This wide frequency band allows for versatility in various high-frequency applications.

Maximum Diode Capacitance: 1.5 pF

The low diode capacitance ensures high frequency performance and minimal signal distortion.

Package Shape: ROUND

The round shape promotes easy mounting and integration into different systems.

No. of Terminals: 2

The two terminals provide a simple connection setup, suitable for basic circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient heat dissipation and compact design.

Maximum Operating Temperature: 125 °C

With a high operating temperature, this diode can withstand demanding conditions without sacrificing performance.

Terminal Finish: TIN LEAD

The tin lead finish ensures reliable electrical connections and resistance to corrosion.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB mounting and soldering processes.

Maximum Power Dissipation: 0.28 W

This diode can handle high power levels without overheating, ensuring long-term reliability.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature, this diode can withstand manufacturing processes without damage.

Diode Type: MIXER DIODE

The mixer diode type is specifically designed for mixing signals and offers superior performance in RF applications.

Technology: SCHOTTKY

The Schottky technology provides low forward voltage drop and fast switching speed for efficient signal processing.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy installation and secure connections on PCBs.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures stable and reliable performance over time.

Technical Specifications

Microwave Mixer & Detector Diodes MBD301 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Sub-Category:

Other Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBD301 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-01-262-9770, 5961012629770

NIIN

012629770

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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