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MBD330DWT1

Onsemi

MBD330DWT1 by Onsemi

MBD330DWT1 by Onsemi is a Schottky mixer diode with 2 elements, suitable for VHF to UHF frequencies. It features a max forward voltage of 0.6V and can operate at temperatures up to 125 °C. This surface-mount diode in a small outline package is ideal for microwave applications requiring high-frequency mixing and detection capabilities.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

24,000

-

$0.185

$0.153

$0.137

DigiKey

USA . 24,000 parts In-Stock

1+ parts

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$0.230

24,000

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$0.230

Verical

USA . 24,000 parts In-Stock

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$0.171

24,000

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$0.171

Distributors (In-Stock)

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TEDSS.com

USA . 944 parts In-Stock

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$0.110

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944

$0.110

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Digiode

USA . 2,446 parts In-Stock

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$0.144

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2,446

$0.144

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Vyrian

USA . 2,121 parts In-Stock

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$0.152

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$0.152

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DigiKey Marketplace

USA . 24,000 parts In-Stock

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Sea View Technologies

USA . 12,000 parts In-Stock

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PC Components Company LLC

USA . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Semi Source

USA . 2,309 parts In-Stock

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2,309

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Mil-Aero Solutions, Inc.

USA . 1,223 parts In-Stock

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Prism Electronics

USA . 52 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 212 parts In-Stock

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$0.110

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212

$0.110

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Corphita

USA . 630 parts In-Stock

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$0.137

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630

$0.137

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Andel Nordic

Denmark . 2,264 parts In-Stock

1+ parts

$3.960

100+ parts

-

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$3.801

10k+ parts

$3.801

2,264

$3.960

-

$3.801

$3.801

Continental Prestige Electronics

USA . 24,000 parts In-Stock

1+ parts

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$0.419

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$0.419

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QUARKTWIN TECHNOLOGY LTD

USA . 15,622 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,350 parts In-Stock

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Problanco Electronics

Mexico . 5,448 parts In-Stock

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Kepictronics

USA . 3,190 parts In-Stock

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Kulean Microsystems

USA . 2,994 parts In-Stock

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TANS Electronics

Latvia . 2,851 parts In-Stock

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Metaverse IC Inc.

Canada . 2,690 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 1,446 parts In-Stock

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UHIMA Technologies

Türkiye . 509 parts In-Stock

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509

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Overview

Enhance your electronic projects with the MBD330DWT1 by Onsemi, a top-of-the-line Microwave Mixer & Detector Diode that boasts superior quality and reliability. Manufactured by Onsemi, a renowned industry leader, this diode offers very high to ultra high-frequency capabilities, making it ideal for a wide range of applications. With its small outline package style and Gull Wing terminal form, this diode is not only versatile but also efficient, with a maximum power dissipation of 0.12 W. Upgrade your projects today with the MBD330DWT1 and experience the value and performance that Onsemi products deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diodes inside, ensuring a long lifespan for the product.

Config: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for better isolation and control of the mixing and detecting processes, resulting in more accurate and reliable performance.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Covering a wide frequency band from very high to ultra high frequency makes this product versatile and suitable for various applications requiring different frequency ranges.

Surface Mount: YES

Being surface mountable makes installation and mounting of this diode much easier and more convenient in modern electronic circuits.

Maximum Diode Capacitance: 1.5 pF

With a low diode capacitance of 1.5 pF, this diode offers fast response times and high sensitivity, making it ideal for high frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on a circuit board, making it easier to integrate this diode into electronic devices.

No. of Terminals: 6

Having 6 terminals provides more flexibility in connecting the diode to other components in a circuit, allowing for versatile circuit design options.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices with limited space.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this diode can withstand high temperature environments, ensuring reliable performance in various conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good conductivity and solderability for easy and reliable connection to other components in a circuit.

Terminal Position: DUAL

Having dual terminal positions offers more flexibility in mounting and orientation of the diode in a circuit, allowing for easier integration into different circuit layouts.

Maximum Power Dissipation: 0.12 W

With a maximum power dissipation of 0.12 W, this diode can handle higher power levels without overheating, ensuring stable performance under varying power conditions.

Maximum Time At Peak Reflow Temperature (s): 30

This diode can withstand peak reflow temperatures for up to 30 seconds, making it easier to solder onto a circuit board during manufacturing processes.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this diode can withstand high temperature soldering processes, ensuring reliable solder joints during assembly.

Diode Type: MIXER DIODE

Being a mixer diode, this product is designed to perform mixing functions in electronic circuits, making it suitable for applications requiring signal modulation or frequency conversion.

Maximum Forward Voltage (VF): 0.6 V

Having a low maximum forward voltage of 0.6 V reduces power loss and energy consumption in the circuit, making it more efficient for high frequency applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low forward voltage drop, making it ideal for high frequency and high speed applications.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and easy solderability, ensuring secure connections during assembly and operation.

No. of Elements: 2

Having 2 elements allows for more complex signal processing capabilities, enabling the diode to perform mixing and detecting functions simultaneously for versatile circuit designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, this diode can handle reverse voltage spikes without breakdown, ensuring reliable operation in transient conditions.

Diode Element Material: SILICON

Using silicon as the diode element material offers good thermal stability and reliability, making this diode suitable for a wide range of operating conditions.

Technical Specifications

Microwave Mixer & Detector Diodes MBD330DWT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SEPARATE, 2 ELEMENTS

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.12 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBD330DWT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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