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MBD301G

Onsemi

MBD301G by Onsemi

MBD301G by Onsemi is a single Schottky mixer diode with ultra high frequency band. It has a max diode capacitance of 1.5 pF and can operate in temperatures ranging from -55 to 125 °C. This cylindrical package diode is ideal for microwave applications requiring high frequency mixing and detection capabilities.

Median Price

$0.046

Lifecycle Status

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Adafruit Industries

USA . 3,984 parts In-Stock

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Rochester

USA . 788 parts In-Stock

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$0.068

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788

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Digiode

USA . 2,295 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Chip Stock

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Vyrian

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Bristol Electronics

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LIBRA Elektronik GmbH

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Corel Iberica Componentes, S.L.

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Semi Source

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Resion

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Corphita

USA . 2,194 parts In-Stock

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Advanced Electronics

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Corohmni

South Africa . 283 parts In-Stock

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Semicontronic

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Aranea Global

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Continental Prestige Electronics

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Argo Parts USA

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Aztec Data Supply Inc.

USA . 898 parts In-Stock

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AZTECH Wire

Italy . 988 parts In-Stock

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Perfect Parts

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Overview

Discover the MBD301G by Onsemi, a reliable and high-quality microwave mixer & detector diode that offers exceptional performance in ultra-high-frequency applications. Manufactured by Onsemi, a reputable leader in semiconductor technology, this product boasts a single configuration with a low diode capacitance of 1.5pF, ensuring precise signal detection. With a maximum operating temperature of 125°C and a wide range of applications, including radar systems and communication devices, the MBD301G provides customers with unmatched value, reliability, and efficiency for their electronic projects. Trust Onsemi for superior quality and unparalleled performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications and environments.

Config: SINGLE

The single configuration simplifies the setup and integration of the diode into electronic circuits.

Frequency Band: ULTRA HIGH FREQUENCY

The diode can operate in the ultra-high frequency band, allowing for high-performance signal processing.

Maximum Diode Capacitance: 1.5 pF

Low capacitance ensures minimal signal loss and accurate mixing and detection of microwave signals.

Package Shape: ROUND

The round shape facilitates easy mounting and placement of the diode in electronic circuits.

No. of Terminals: 2

Having 2 terminals simplifies the connection of the diode in the circuit, enhancing ease of use.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor for space-constrained applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance even in demanding thermal conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the diode functions effectively even in cold environments.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper offers good conductivity for efficient signal transmission.

Terminal Position: BOTTOM

The bottom terminal position enables easy and secure soldering onto circuit boards.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, the diode can handle power efficiently without overheating.

Peak Reflow Temperature °C: 260

The diode can withstand high reflow temperatures during assembly processes, ensuring its reliability.

Diode Type: MIXER DIODE

As a mixer diode, it is designed for precise signal mixing and detection, making it ideal for microwave applications.

Technology: SCHOTTKY

The Schottky technology used in the diode offers fast switching speed and low forward voltage drop for efficient operation.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy installation and secure connection on circuit boards.

Diode Element Material: SILICON

Silicon diode elements provide reliable performance and high signal fidelity in microwave signal processing applications.

Technical Specifications

Microwave Mixer & Detector Diodes MBD301G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-226AC

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Sub-Category:

Other Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Trade Compliance

MBD301G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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