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MMBD701LT1

Onsemi

MMBD701LT1 by Onsemi

MMBD701LT1 by Onsemi is a Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It features a small outline package with gull wing terminals and can operate at up to 125 °C. This surface-mount diode has a max power dissipation of 0.2 W and is ideal for microwave mixing and detection tasks.

Median Price

$0.179

Lifecycle Status

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29

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1k+

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Adafruit Industries

USA . 70 parts In-Stock

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$0.179

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$0.163

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$0.147

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$0.179

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$0.147

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Bristol Electronics

USA . 28,509 parts In-Stock

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$0.113

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$0.056

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$0.022

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$0.056

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$0.014

TEDSS.com

USA . 3,000 parts In-Stock

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$0.120

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$0.018

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Digiode

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Component Electronics Inc.

Canada . 5,795 parts In-Stock

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Chip Stock

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Quantum Digital Technology

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Lantek

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Vyrian

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PC Components Company LLC

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Semi Source

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Prism Electronics

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Resion

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Inventory MP

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Inland Empire Components Inc.

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Sogenti Electronics

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ACDS - Activité Composants Distribution Service

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Microfarads

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Elcom Components

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North Shore Components

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Cyclops Electronics Ltd

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Connector Distribution Corp

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Right Parts Inc.

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QIE Inc.

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Velocity Electronics

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Corohmni

South Africa . 407 parts In-Stock

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Corphita

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Perfect Parts

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SupplyDigital Components

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Problanco Electronics

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Glotronic Ltd.

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Speed Components Ltd (Excess)

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TANS Electronics

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UHIMA Technologies

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Overview

Unleash the power of innovation with the MMBD701LT1 by Onsemi. Designed for ultra high-frequency applications, this mixer diode offers unparalleled performance and reliability. With a small outline package style and gull wing terminal form, this diode is perfect for surface mount applications. Onsemi's commitment to quality ensures that this product delivers superior results every time. Whether you're working in telecommunications, radar systems, or industrial equipment, the MMBD701LT1 provides the value, benefits, and advantages you need to stay ahead of the curve. Elevate your projects to new heights with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to impact and environmental conditions, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the design and integration process, making it easier to use and reducing potential points of failure.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency band allows for high-speed and high-performance operation, ideal for applications that require fast signal processing.

Surface Mount: YES

The surface mount capability enables easy and secure installation on circuit boards, saving space and enhancing overall product reliability.

Maximum Diode Capacitance: 1 pF

The low diode capacitance ensures minimal signal distortion and high-frequency response, making the product suitable for high-speed applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization and easy integration into existing electronic systems.

No. of Terminals: 3

The 3 terminals provide multiple connection points for additional flexibility in circuit design and functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs, making it suitable for applications with limited board space.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance in a wide range of environments and applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent solderability, ensuring secure and reliable connections during assembly.

Terminal Position: DUAL

The dual terminal position offers versatility in circuit layout and design, allowing for different connection configurations as needed.

Maximum Power Dissipation: 0.2 W

The low maximum power dissipation helps in reducing heat generation and energy consumption, enhancing overall product efficiency.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures faster and more efficient assembly processes, reducing overall manufacturing time.

Peak Reflow Temperature °C: 235

The high peak reflow temperature allows for reliable soldering and ensures secure connections during the assembly process.

Diode Type: MIXER DIODE

The mixer diode type is designed for signal mixing applications, offering high performance and accuracy for various signal processing tasks.

Technology: SCHOTTKY

The Schottky technology provides low forward voltage drop and fast switching speed, making the product ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy and secure soldering, ensuring reliable electrical connections and overall product durability.

Diode Element Material: SILICON

The silicon diode element material offers high reliability, temperature stability, and low leakage current, making it suitable for a wide range of applications.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD701LT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD701LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-01-533-6934, 5961015336934

NIIN

015336934

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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