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1PS79SB17,115

NXP Semiconductors

1PS79SB17,115 by NXP Semiconductors

1PS79SB17,115 by NXP Semiconductors is a single Schottky mixer diode with a max forward voltage of 0.35V and a max repetitive peak reverse voltage of 4V. It has a diode capacitance of 1pF, operates at temperatures up to 150°C, and is suitable for microwave applications requiring high-frequency signal mixing and detection.

Median Price

$0.087

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1k+

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Mouser Electronics

USA . 6,199 parts In-Stock

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$0.410

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$0.173

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$0.091

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$0.091

Future Electronics

Canada . 138,000 parts In-Stock

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Avnet

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Arrow

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Verical

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Chip1Stop

Japan . 9,000 parts In-Stock

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Rochester

USA . 1,950 parts In-Stock

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$0.082

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$0.068

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$0.060

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$0.082

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$0.060

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Digiode

USA . 4,339 parts In-Stock

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TME

Poland . 209 parts In-Stock

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$0.354

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$0.149

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$0.096

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209

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$0.087

NAC Semi

USA . 111,000 parts In-Stock

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Chip Stock

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Vyrian

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Semicontronic

India . 4,808 parts In-Stock

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$0.055

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Ampacity Inc.

Singapore . 4,442 parts In-Stock

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Corphita

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Component Stockers USA

USA . 37,567 parts In-Stock

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AZTECH Wire

Italy . 2,350 parts In-Stock

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Modulus Dynamics

Lithuania . 3,227 parts In-Stock

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Corohmni

South Africa . 970 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 5,029 parts In-Stock

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Argo Parts USA

USA . 2,941 parts In-Stock

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UNI Independent Distributors

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Overview

Discover the power of the 1PS79SB17,115 from NXP Semiconductors, a leading manufacturer of high-quality microwave mixer & detector diodes. This single-config surface mount diode offers exceptional value with its small outline package and Schottky technology. With a maximum operating temperature of 150°C and a maximum repetitive peak reverse voltage of 4V, this diode is ideal for a wide range of applications. Trust NXP Semiconductors to provide you with reliable and efficient components for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the diode, ensuring long-term reliability.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into various systems.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Diode Capacitance: 1 pF

Low capacitance ensures minimal signal loss and distortion, making it ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for compact and space-saving installation in electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for high-density mounting on PCBs.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this diode can withstand harsh conditions and maintain performance.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and allow for multiple connection options.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time minimizes the risk of damaging the diode during the soldering process.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this diode can withstand the soldering process without any performance degradation.

Diode Type: MIXER DIODE

Designed specifically for microwave mixing applications, ensuring excellent performance in signal processing.

Maximum Forward Voltage (VF): 0.35 V

Low forward voltage drop minimizes power loss and heat generation, improving overall efficiency.

Technology: SCHOTTKY

Utilizing Schottky technology results in fast switching speeds and low forward voltage, ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminals provide a stable and secure connection, preventing any accidental disconnection or signal loss.

Maximum Repetitive Peak Reverse Voltage: 4 V

With a high reverse voltage rating, this diode can handle reverse voltage fluctuations without damage.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stable performance over a wide range of temperatures.

Technical Specifications

Microwave Mixer & Detector Diodes 1PS79SB17,115 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from NXP Semiconductors

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.35 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

4 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1PS79SB17,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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