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SBL-122

Onsemi

SBL-122 by Onsemi

SBL-122 by Onsemi is a surface mount mixer diode with GaAs element. It operates from 3.9 GHz to 12 GHz, ideal for microwave applications. With a max temp of 150 °C, it's suitable for high-frequency circuits in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 786 parts In-Stock

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786

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Digiode

USA . 61 parts In-Stock

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61

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TANS Electronics

Latvia . 7,343 parts In-Stock

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7,343

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Problanco Electronics

Mexico . 3,265 parts In-Stock

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Kulean Microsystems

USA . 2,775 parts In-Stock

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SupplyDigital Components

Austria . 2,612 parts In-Stock

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Corphita

USA . 719 parts In-Stock

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719

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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Corohmni

South Africa . 150 parts In-Stock

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Overview

Experience superior performance and reliability with the Onsemi SBL-122 Microwave Mixer & Detector Diode. Manufactured by industry leader Onsemi, this surface mount diode offers a wide operating frequency range from 3.9 GHz to 12 GHz, making it ideal for a variety of applications. With a maximum operating temperature of 150 °C and made from high-quality gallium arsenide, this diode ensures consistent and efficient operation. Trust the SBL-122 to deliver exceptional value, benefits, and advantages to meet your needs.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes this product easy to install and integrate into systems, minimizing the need for additional components or wiring.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this product can handle intense heat conditions, ensuring reliable performance even in demanding environments.

Diode Type: MIXER DIODE

The use of mixer diodes in this product allows for efficient mixing of signals, making it ideal for various applications such as frequency down-conversion and modulation.

Minimum Operating Frequency: 3.9 GHz

The low minimum operating frequency of 3.9 GHz enables this product to work with a wide range of signals and frequencies, offering versatility in usage.

Diode Element Material: GALLIUM ARSENIDE

Utilizing gallium arsenide as the diode element material ensures high performance and reliability, making this product suitable for high-frequency applications.

Maximum Operating Frequency: 12 GHz

With a maximum operating frequency of 12 GHz, this product can handle high-frequency signals effectively, making it suitable for advanced communication and radar systems.

Technical Specifications

Microwave Mixer & Detector Diodes SBL-122 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

12 GHz

Minimum Operating Frequency:

3.9 GHz

Maximum Operating Temperature:

150 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

SBL-122 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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