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NSR15ADXV6T1

Onsemi

NSR15ADXV6T1 by Onsemi

NSR15ADXV6T1 by Onsemi is a Schottky mixer diode with 2 elements, suitable for medium frequency applications. It has a max forward voltage of 0.68 V and operates in temperatures ranging from -65 to 150 °C. This surface-mount diode has a package style of small outline and is ideal for microwave mixing and detection tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,660 parts In-Stock

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Digiode

USA . 1,354 parts In-Stock

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1,354

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TANS Electronics

Latvia . 5,926 parts In-Stock

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5,926

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Problanco Electronics

Mexico . 3,856 parts In-Stock

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SupplyDigital Components

Austria . 3,364 parts In-Stock

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3,364

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Kulean Microsystems

USA . 2,897 parts In-Stock

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Corphita

USA . 625 parts In-Stock

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625

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Corohmni

South Africa . 82 parts In-Stock

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UHIMA Technologies

Türkiye . 76 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the NSR15ADXV6T1 by Onsemi. Crafted by a trusted industry leader, this microwave mixer & detector diode boasts unparalleled quality and reliability. Ideal for medium frequency applications, this product offers seamless integration with its compact package style and surface mount capabilities. Experience enhanced performance and efficiency with a maximum reverse current of 0.05 uA and a minimum breakdown voltage of 15V. Elevate your projects to the next level with the NSR15ADXV6T1 - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability, making the product resistant to external factors such as moisture and temperature changes.

Frequency Band: MEDIUM FREQUENCY

Ideal for applications that require medium frequency signal processing, offering a balanced performance for a variety of tasks.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum Reverse Current: 0.05 uA

Low maximum reverse current ensures efficient operation and minimal power loss, contributing to overall energy efficiency.

Package Shape: RECTANGULAR

Rectangular package shape fits well in modern electronic setups, optimizing space utilization and making the product visually appealing.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows for reliable performance in various environmental conditions, ensuring versatility and durability.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, facilitating secure connections and enhancing overall product reliability.

Diode Type: MIXER DIODE

Mixer diode type offers high speed and efficiency in signal mixing applications, making the product suitable for demanding signal processing tasks.

Technical Specifications

Microwave Mixer & Detector Diodes NSR15ADXV6T1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

15 V

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

Frequency Band:

MEDIUM FREQUENCY

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.03 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

1 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

NSR15ADXV6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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