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BAT17-07E6327

Infineon Technologies

BAT17-07E6327 by Infineon Technologies

Infineon's BAT17-07E6327 is a Schottky mixer diode with 2 elements, suitable for VHF to UHF frequencies. It has a max forward voltage of 0.35V and operates b/w -55°C to 150°C. This surface-mount diode in small outline package is ideal for microwave applications requiring low capacitance and high reverse current tolerance.

Median Price

$0.910

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,429 parts In-Stock

1+ parts

$0.910

100+ parts

$0.407

1k+ parts

$0.235

10k+ parts

$0.211

9,429

$0.910

$0.407

$0.235

$0.211

Distributors (In-Stock)

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Digiode

USA . 691 parts In-Stock

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$0.323

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-

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691

$0.323

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Vyrian

USA . 16,337 parts In-Stock

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16,337

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Zilex Electronics Inc.

Canada . 11,955 parts In-Stock

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11,955

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Rutronik

Germany . 9,000 parts In-Stock

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$0.122

9,000

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$0.122

VNN

France . 4,387 parts In-Stock

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4,387

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Modulus Dynamics

Lithuania . 27,656 parts In-Stock

1+ parts

$0.148

100+ parts

$0.142

1k+ parts

$0.136

10k+ parts

-

27,656

$0.148

$0.142

$0.136

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Corphita

USA . 867 parts In-Stock

1+ parts

$0.306

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867

$0.306

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Ampacity Inc.

Singapore . 16,429 parts In-Stock

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$0.630

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16,429

$0.630

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 38,835 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,404 parts In-Stock

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Microchip USA

USA . 6,742 parts In-Stock

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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Perfect Parts

USA . 6,390 parts In-Stock

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Argo Parts USA

USA . 4,518 parts In-Stock

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4,518

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Continental Prestige Electronics

USA . 3,979 parts In-Stock

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3,979

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Alle Elektronik GmbH

Germany . 1,709 parts In-Stock

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1,709

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Bastille Electronics

Australia . 75 parts In-Stock

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Overview

Enhance your RF applications with the BAT17-07E6327 from Infineon Technologies. This high-quality microwave mixer and detector diode boasts very high to ultra-high frequency capabilities, making it ideal for a wide range of cutting-edge technologies. With its separate 2-element configuration and small outline package style, this diode offers superior performance and reliability. Experience the seamless integration, precise functionality, and exceptional value that only Infineon can deliver. Upgrade your projects with the BAT17-07E6327 and unlock new possibilities in RF engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it ideal for portable and long-lasting applications.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Covering a wide frequency band allows the product to be versatile and suitable for a variety of high-frequency applications.

Surface Mount: YES

Being surface mountable makes the product easier to integrate into circuit boards, saving space and simplifying the manufacturing process.

Maximum Reverse Current: 10 uA

With a low maximum reverse current, the diodes offer efficient operation and reduced power consumption.

Minimum Operating Temperature: -55 °C

The wide operating temperature range allows the product to perform reliably in extreme temperature conditions.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage, enhancing the performance of the product in high-frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes BAT17-07E6327 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Maximum Diode Capacitance:

.75 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.35 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.15 W

Qualification:

Not Qualified

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

4 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT17-07E6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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