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BAT19-AR1

STMicroelectronics

BAT19-AR1 by STMicroelectronics

BAT19-AR1 by STMicroelectronics is a single-config microwave mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it operates at up to 125 °C with a breakdown voltage of 10 V, featuring Schottky technology and wire terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,892 parts In-Stock

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4,892

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Anansix

USA . 2,378 parts In-Stock

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2,378

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Vyrian

USA . 138 parts In-Stock

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138

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 694 parts In-Stock

1+ parts

$0.026

100+ parts

-

1k+ parts

$0.023

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694

$0.026

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$0.023

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MKK Technologies

India . 1,972 parts In-Stock

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$0.048

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1,972

$0.048

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DigiPath Technology Company

USA . 1,972 parts In-Stock

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$0.048

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1,972

$0.048

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Native Components

USA . 218 parts In-Stock

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$110.090

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$105.686

218

$110.090

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$105.686

Northwest PG Solutions

USA . 344 parts In-Stock

1+ parts

$121.099

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344

$121.099

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Corphita

USA . 4,348 parts In-Stock

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4,348

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Parana Technologies

USA . 570 parts In-Stock

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$0.031

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570

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$0.031

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Overview

Upgrade your microwave system with the BAT19-AR1 from STMicroelectronics! Designed with precision and reliability in mind, this ultra-high frequency mixer diode offers unmatched performance for a variety of applications. Whether you need fast signal detection or high-speed switching capabilities, this diode delivers superior results every time. Trust in the quality and expertise of STMicroelectronics to elevate your projects to the next level. Experience the value and benefits of the BAT19-AR1 today!

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides high durability and excellent performance in extreme temperature conditions, making this product reliable for long-term use.

Config: SINGLE

Single configuration simplifies the setup and reduces the chances of connection errors, ensuring ease of installation and operation.

Frequency Band: ULTRA HIGH FREQUENCY

Ultra-high frequency band allows for superior signal processing and communication capabilities, making this product ideal for advanced applications.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance ensures minimal signal loss and improved overall performance, making this product highly efficient for various applications.

Maximum Reverse Current: 0.1 uA

Low reverse current reduces power consumption and improves energy efficiency, making this product cost-effective and environmentally friendly.

Package Shape: ROUND

Round package shape provides better compatibility with other components and allows for easy integration into different systems, enhancing versatility and flexibility.

No. of Terminals: 2

Two terminals simplify the connection process and ensure a secure electrical connection, making this product user-friendly and reliable in operation.

Package Style (Meter): LONG FORM

Long form package style offers better heat dissipation and protection for the diode element, ensuring stable performance over an extended period of time.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable performance in harsh environments, making this product suitable for a wide range of applications.

Terminal Position: AXIAL

Axial terminal position ensures easy and secure connections, minimizing the risk of signal disruptions and enhancing the overall stability of the product.

Case Connection: ISOLATED

Isolated case connection prevents interference and crosstalk between components, ensuring accurate signal processing and high performance in demanding scenarios.

Minimum Breakdown Voltage: 10 V

High minimum breakdown voltage provides protection against power surges and voltage spikes, enhancing the durability and reliability of the product.

Diode Type: MIXER DIODE

Mixer diode type offers versatile signal processing capabilities and higher efficiency, making this product suitable for a wide range of mixer applications.

Maximum Forward Voltage (VF): 1 V

Low maximum forward voltage minimizes power loss and improves overall efficiency, allowing for efficient signal processing and transmission.

Maximum Output Current: 30 A

High maximum output current enables the product to handle high-power signals and heavy loads, making it suitable for demanding applications that require high performance.

Technology: SCHOTTKY

Schottky technology ensures fast switching speed and low power consumption, enhancing the performance and efficiency of the product in various applications.

Terminal Form: WIRE

Wire terminal form allows for easy and secure connections, reducing the risk of signal loss or disruptions, and ensuring reliable operation of the product.

Diode Element Material: SILICON

Silicon diode element material offers high durability and performance stability, making this product reliable for long-term use in various demanding environments.

Technical Specifications

Microwave Mixer & Detector Diodes BAT19-AR1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Minimum Breakdown Voltage:

10 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.1 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT19-AR1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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