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BAT29

STMicroelectronics

BAT29 by STMicroelectronics

BAT29 by STMicroelectronics is a Schottky mixer diode designed for ultra-high frequency applications. It features a max reverse current of 0.05 µA, a max operating temp of 125 °C, and a low capacitance of 1 pF. Ideal for microwave mixing and detection tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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ECAB

Sweden . 6,475 parts In-Stock

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6,475

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Digiode

USA . 3,867 parts In-Stock

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Anansix

USA . 2,130 parts In-Stock

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Electronic Expediters

USA . 1,704 parts In-Stock

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LWI Electronics Inc

India . 250 parts In-Stock

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250

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Digital Electronic Gebert Verwaltungs UG

Germany . 100 parts In-Stock

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LittleDiode

UK . 23 parts In-Stock

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Vyrian

USA . 23 parts In-Stock

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Resion

USA . 5 parts In-Stock

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IDEA Electronic Components Group

UK . 484 parts In-Stock

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$0.094

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$0.084

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484

$0.094

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$0.084

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MKK Technologies

India . 1,791 parts In-Stock

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$0.176

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DigiPath Technology Company

USA . 1,791 parts In-Stock

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$0.176

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Corphita

USA . 4,843 parts In-Stock

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Parana Technologies

USA . 2,369 parts In-Stock

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$0.112

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Northwest PG Solutions

USA . 606 parts In-Stock

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Native Components

USA . 601 parts In-Stock

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Assy Fe

Spain . 4 parts In-Stock

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Overview

Unlock the potential of your designs with the BAT29 from STMicroelectronics, the trusted name in high-performance semiconductor solutions. This microwave mixer and detector diode excels in ultra-high frequency applications, offering unparalleled reliability and precision. With its robust construction and low noise figure, it empowers engineers to create cutting-edge technology with confidence, reducing development time while enhancing overall efficiency. Experience the quality and innovation that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: GLASS

The glass body provides excellent thermal stability and durability, ensuring reliable performance in various operating environments.

Configuration: SINGLE

A single diode configuration simplifies integration into circuits, making it a convenient choice for designers.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra-high frequency applications, this diode ensures optimal performance in RF and microwave systems.

Maximum Diode Capacitance: 1 pF

The low capacitance helps maintain signal integrity at high frequencies, minimizing distortion and improving overall efficiency.

Maximum Reverse Current: 0.05 uA

A very low reverse current indicates high reliability and efficient operation, reducing energy losses in the circuit.

Package Shape: ROUND

The round package shape is suitable for various mounting options, enhancing versatility in circuit design.

Number of Terminals: 2

With only two terminals, this diode is easy to integrate into compact designs, saving space on PCB layouts.

Package Style (Meter): LONG FORM

The long form package offers enhanced stability during handling and mounting, ensuring secure attachment in circuit applications.

Maximum Operating Temperature: 125 °C

This high temperature rating allows the diode to safely operate in demanding environments, improving reliability.

Minimum Operating Temperature: -65 °C

The capability to function in extreme cold makes this diode suitable for a wide range of applications, including aerospace.

Terminal Finish: TIN LEAD

The tin-lead terminal finish enhances solderability, facilitating easier assembly and reducing manufacturing costs.

Terminal Position: AXIAL

Axial terminal positioning simplifies integration into through-hole PCBs, providing flexibility in circuit layouts.

Case Connection: ISOLATED

An isolated case connection minimizes interference from case-to-circuit interactions, ensuring signal purity.

Minimum Breakdown Voltage: 5 V

A minimum breakdown voltage of 5V allows for safe operation within specified voltage limits, enhancing circuit protection.

Diode Type: MIXER DIODE

As a mixer diode, it effectively combines signals, making it ideal for RF signal processing applications.

Maximum Forward Voltage (VF): 0.55 V

A low forward voltage drop improves efficiency, reducing power consumption and heat generation in the circuit.

Maximum Output Current: 30 A

The capability to handle up to 30A output current enables it to support a wide range of applications without performance degradation.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage, making this diode suitable for high-frequency operations.

Terminal Form: WIRE

Wire terminal form provides flexibility in mounting and connection options, adapting easily to different circuitry needs.

Maximum Repetitive Peak Reverse Voltage: 5 V

Limits on peak reverse voltage ensure safe operation, protecting the diode from damage and extending its lifespan.

Maximum Noise Figure: 7 dB

With a maximum noise figure of 7 dB, this diode maintains signal clarity, making it ideal for sensitive applications.

Maximum Non-Repetitive Peak Forward Current: 0.06 A

Handling up to 60mA in non-repetitive conditions provides extra durability under transient conditions, enhancing reliability.

Diode Element Material: SILICON

Silicon material offers good thermal properties and reliability, making it a standard choice for high-performance diodes.

Technical Specifications

Microwave Mixer & Detector Diodes BAT29 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

5 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

Maximum Noise Figure:

7 dB

Maximum Non Repetitive Peak Forward Current:

.06 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

.05 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

BAT29 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-01-034-5218, 5961010345218, 6140-00-184-3415, 6140001843415

NIIN

010345218, 001843415

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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