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NSR15ADXV6T5

Onsemi

NSR15ADXV6T5 by Onsemi

NSR15ADXV6T5 by Onsemi is a Schottky mixer diode with 2 elements, suitable for medium frequency applications. It has a max forward voltage of 0.68 V and operates in temperatures ranging from -65 to 150 °C. This surface-mount diode features a small outline package style and is ideal for microwave mixing and detection tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,885 parts In-Stock

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Vyrian

USA . 432 parts In-Stock

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432

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TANS Electronics

Latvia . 7,489 parts In-Stock

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7,489

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Problanco Electronics

Mexico . 4,841 parts In-Stock

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Kulean Microsystems

USA . 3,847 parts In-Stock

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Corphita

USA . 943 parts In-Stock

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943

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Corohmni

South Africa . 387 parts In-Stock

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SupplyDigital Components

Austria . 289 parts In-Stock

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UHIMA Technologies

Türkiye . 147 parts In-Stock

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Overview

Experience superior performance and reliability with the Onsemi NSR15ADXV6T5 Microwave Mixer & Detector Diodes. With a reputation for excellence, Onsemi delivers cutting-edge technology in a compact package that is perfect for medium frequency applications. Designed with quality materials and advanced technology, this product offers customers unmatched value and efficiency. Whether you're looking for precision in your RF circuits or reliable signal detection, the NSR15ADXV6T5 is the ideal choice for all your needs. Trust Onsemi to provide you with top-of-the-line solutions for your electronic requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the product reliable for long-term use.

Frequency Band: MEDIUM FREQUENCY

Operating in the medium frequency band allows for versatility in different applications and environments.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can perform reliably in various temperature conditions.

Technology: SCHOTTKY

Schottky technology offers high efficiency and fast switching speeds, making this product suitable for high-speed applications.

Technical Specifications

Microwave Mixer & Detector Diodes NSR15ADXV6T5 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

15 V

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

Frequency Band:

MEDIUM FREQUENCY

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.03 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

1 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSR15ADXV6T5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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