Loading...

BAT29-AR2

STMicroelectronics

BAT29-AR2 by STMicroelectronics

STMicroelectronics BAT29-AR2 is a single mixer diode with Schottky technology. Operating in the ultra-high frequency band, it has a max forward voltage of 0.55V and noise figure of 7dB. Ideal for microwave applications due to its low diode capacitance and high breakdown voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,580

-

-

-

-

Digiode

USA . 270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

270

-

-

-

-

Vyrian

USA . 103 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

103

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 683 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

$0.031

10k+ parts

-

683

$0.034

-

$0.031

-

MKK Technologies

India . 1,360 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

-

1,360

$0.064

-

-

-

DigiPath Technology Company

USA . 1,360 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

-

1,360

$0.064

-

-

-

Native Components

USA . 379 parts In-Stock

1+ parts

$9.180

100+ parts

-

1k+ parts

-

10k+ parts

-

379

$9.180

-

-

-

Northwest PG Solutions

USA . 431 parts In-Stock

1+ parts

$10.098

100+ parts

$9.088

1k+ parts

-

10k+ parts

-

431

$10.098

$9.088

-

-

Corphita

USA . 3,558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,558

-

-

-

-

Parana Technologies

USA . 685 parts In-Stock

1+ parts

-

100+ parts

$0.041

1k+ parts

-

10k+ parts

-

685

-

$0.041

-

-

Overview

Elevate your microwave applications with the BAT29-AR2 by STMicroelectronics. Crafted with precision and quality, this mixer diode offers ultra-high frequency performance and minimal noise figure. Its Schottky technology ensures efficiency and reliability, while the glass package guarantees durability. Ideal for various industries, this single-config diode delivers exceptional value and benefits to customers seeking top-notch performance. Upgrade your projects with the BAT29-AR2 and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides good mechanical strength and thermal stability, making this product durable and reliable.

Config: SINGLE

Single configuration simplifies the design and integration process, making this product user-friendly.

Frequency Band: ULTRA HIGH FREQUENCY

Ultra high frequency band allows for high-speed data processing and communication, ideal for applications requiring fast signal processing.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal distortion, making this product suitable for high-frequency applications.

Maximum Reverse Current: 0.05 uA

Low reverse current ensures efficient operation and minimizes power loss, enhancing the overall performance of the product.

Package Shape: ROUND

Round package shape facilitates easy installation and handling, making this product convenient to use.

No. of Terminals: 2

Two terminals simplify the electrical connection process, reducing complexity and making this product easy to integrate.

Package Style (Meter): LONG FORM

Long form package style allows for better heat dissipation and thermal management, ensuring reliable operation under high temperature conditions.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance ensures the product can withstand harsh environmental conditions, increasing its durability and reliability.

Terminal Position: AXIAL

Axial terminal position enables easy connection and minimizes signal interference, making this product suitable for high-performance applications.

Case Connection: ISOLATED

Isolated case connection prevents signal leakage and interference, ensuring accurate and reliable signal detection and mixing.

Minimum Breakdown Voltage: 5 V

High minimum breakdown voltage protects the product from voltage surges and ensures long-term reliability and safety.

Diode Type: MIXER DIODE

Mixer diode type is specifically designed for signal mixing applications, ensuring efficient and accurate signal processing.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage minimizes power consumption and heat generation, improving the energy efficiency of the product.

Maximum Output Current: 30 A

High maximum output current capability allows for handling high-power signals, making this product suitable for demanding applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low noise performance, making this product ideal for high-frequency applications.

Terminal Form: WIRE

Wire terminal form allows for easy and secure connections, ensuring reliable signal transmission and minimizing signal loss.

Maximum Noise Figure: 7 dB

Low noise figure ensures high signal clarity and accuracy, making this product ideal for sensitive signal detection and mixing applications.

Diode Element Material: SILICON

Silicon diode element material offers good thermal conductivity and stability, enhancing the overall performance and reliability of the product.

Technical Specifications

Microwave Mixer & Detector Diodes BAT29-AR2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

5 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

Maximum Noise Figure:

7 dB

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.05 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT29-AR2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 10