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BAT29-AZ1

STMicroelectronics

BAT29-AZ1 by STMicroelectronics

STMicroelectronics BAT29-AZ1 is a single Schottky mixer diode with 1 pF capacitance and 0.05 uA reverse current. Ideal for ultra high frequency applications, it offers a max forward voltage of 0.55 V and 30 A output current, making it suitable for microwave mixer & detector diode circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,410

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-

-

-

Digiode

USA . 2,951 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,951

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-

-

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Anansix

USA . 1,983 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,983

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 418 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

$0.098

10k+ parts

-

418

$0.109

-

$0.098

-

MKK Technologies

India . 2,289 parts In-Stock

1+ parts

$0.204

100+ parts

-

1k+ parts

-

10k+ parts

-

2,289

$0.204

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-

-

DigiPath Technology Company

USA . 2,289 parts In-Stock

1+ parts

$0.204

100+ parts

-

1k+ parts

-

10k+ parts

-

2,289

$0.204

-

-

-

Native Components

USA . 235 parts In-Stock

1+ parts

$1.603

100+ parts

-

1k+ parts

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10k+ parts

-

235

$1.603

-

-

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Northwest PG Solutions

USA . 1,632 parts In-Stock

1+ parts

$1.763

100+ parts

-

1k+ parts

-

10k+ parts

-

1,632

$1.763

-

-

-

Corphita

USA . 3,311 parts In-Stock

1+ parts

-

100+ parts

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3,311

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-

-

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Parana Technologies

USA . 1,763 parts In-Stock

1+ parts

-

100+ parts

$0.130

1k+ parts

-

10k+ parts

-

1,763

-

$0.130

-

-

Overview

Experience unmatched performance and reliability with the BAT29-AZ1 by STMicroelectronics, a leading name in semiconductor technology. This ultra-high frequency microwave mixer and detector diode, housed in a durable glass package, offers superior quality and precision for a wide range of applications. With low diode capacitance and noise figure, along with high breakdown voltage and output current, this product ensures optimal performance in demanding environments. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass material ensures durability and heat resistance, making the product suitable for high temperature applications.

Frequency Band: ULTRA HIGH FREQUENCY

The ultra high frequency band allows for fast and efficient signal processing, making this product ideal for high-speed applications.

Maximum Diode Capacitance: 1 pF

The low diode capacitance ensures minimal signal loss and high efficiency in signal mixing and detection processes.

Maximum Reverse Current: 0.05 uA

The low reverse current reduces power consumption and improves overall efficiency of the product.

Diode Type: MIXER DIODE

The use of mixer diode ensures accurate signal mixing and detection, making this product reliable for various applications.

Technology: SCHOTTKY

The Schottky technology offers high switching speeds and low power losses, making this product suitable for high frequency operation.

Maximum Noise Figure: 7 dB

The low noise figure indicates minimal interference and distortion in signal processing, ensuring high quality output.

Diode Element Material: SILICON

The silicon diode element material provides high signal sensitivity and reliability, making this product a durable choice for long-term use.

Technical Specifications

Microwave Mixer & Detector Diodes BAT29-AZ1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

5 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.55 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

Maximum Noise Figure:

7 dB

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.05 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT29-AZ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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