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TGD0654SPMX

Texas Instruments

TGD0654SPMX by Texas Instruments

TGD0654SPMX by Texas Instruments is a surface mount microwave mixer diode with GaAs element. It operates from 0.0001 GHz to 100 GHz at up to 125°C, making it ideal for high-frequency applications in various industries such as telecommunications and radar systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,347 parts In-Stock

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6,347

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Digiode

USA . 2,552 parts In-Stock

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2,552

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,642 parts In-Stock

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$0.010

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1,642

$0.010

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One Stop Electronics

USA . 1,176 parts In-Stock

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$0.010

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1,176

$0.010

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Semicontronic

India . 266 parts In-Stock

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$0.010

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$0.010

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$0.010

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266

$0.010

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$0.010

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Parana Technologies

USA . 1,047 parts In-Stock

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$0.026

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$1.415

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1,047

$0.026

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$1.415

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DigiPath Technology Company

USA . 344 parts In-Stock

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$0.028

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$0.026

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344

$0.028

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ChromeModa Solutions

Germany . 5,689 parts In-Stock

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$0.029

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$0.024

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5,689

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IDEA Electronic Components Group

UK . 285 parts In-Stock

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$0.029

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$0.026

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285

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$0.026

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AZTECH Wire

Italy . 590 parts In-Stock

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$17.779

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590

$17.779

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Corphita

USA . 2,364 parts In-Stock

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2,364

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Corohmni

South Africa . 239 parts In-Stock

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Overview

Experience the superior quality and precision of the TGD0654SPMX by Texas Instruments, a leading manufacturer in the industry. This innovative microwave mixer and detector diode offers endless possibilities in various applications. With surface mount capability and a wide operating frequency range up to 100 GHz, this diode is perfect for high-performance systems. Trust in Texas Instruments to deliver reliable and efficient solutions, providing unparalleled value and benefits to our customers. Elevate your projects with the TGD0654SPMX and experience the difference today.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable allows for easy and convenient integration into a circuit board, saving space and simplifying manufacturing processes.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand higher temperatures without malfunctions, ensuring reliability and longevity.

Diode Type: MIXER DIODE

The mixer diode type allows for signal mixing or frequency conversion, making it versatile for various applications in microwave circuits.

Minimum Operating Frequency: 0.0001 GHz

The low minimum operating frequency enables the diode to function effectively at very low frequencies, expanding its range of usability.

Diode Element Material: GALLIUM ARSENIDE

The use of gallium arsenide as the diode element material offers high electron mobility, low noise characteristics, and fast switching speeds, ideal for microwave applications.

Maximum Operating Frequency: 100 GHz

With a high maximum operating frequency, this diode is capable of processing high-frequency microwave signals accurately and efficiently.

Technical Specifications

Microwave Mixer & Detector Diodes TGD0654SPMX attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Texas Instruments

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

100 GHz

Minimum Operating Frequency:

.0001 GHz

Maximum Operating Temperature:

125 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

TGD0654SPMX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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