Loading...

BAT17DSFILM

STMicroelectronics

BAT17DSFILM by STMicroelectronics

STMicroelectronics BAT17DSFILM is a Schottky mixer diode with 2 elements, suitable for ultra high frequency applications. It features a max forward voltage of 0.6V and low noise figure of 7dB. With a small outline package style and surface mount capability, it is ideal for microwave mixer & detector circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,912

-

-

-

-

Vyrian

USA . 2,409 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,409

-

-

-

-

Anansix

USA . 656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

656

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,442 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

$0.027

10k+ parts

-

1,442

$0.030

-

$0.027

-

MKK Technologies

India . 678 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

-

10k+ parts

-

678

$0.057

-

-

-

DigiPath Technology Company

USA . 678 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

-

10k+ parts

-

678

$0.057

-

-

-

Native Components

USA . 385 parts In-Stock

1+ parts

$164.500

100+ parts

-

1k+ parts

-

10k+ parts

$157.920

385

$164.500

-

-

$157.920

Northwest PG Solutions

USA . 678 parts In-Stock

1+ parts

$180.950

100+ parts

-

1k+ parts

-

10k+ parts

-

678

$180.950

-

-

-

Corphita

USA . 4,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,340

-

-

-

-

Parana Technologies

USA . 383 parts In-Stock

1+ parts

-

100+ parts

$0.036

1k+ parts

-

10k+ parts

-

383

-

$0.036

-

-

Overview

Discover the superior quality and performance of the BAT17DSFILM by STMicroelectronics, a top-tier manufacturer in the field. Ideal for ultra-high frequency applications, this microwave mixer and detector diode offers unparalleled reliability and precision. With a series-connected, center tap configuration and advanced Schottky technology, this product provides exceptional value and benefits to customers. Experience seamless integration with its compact small outline package and surface mount capability, making it a must-have component for your electronic projects. Elevate your designs with the BAT17DSFILM and unlock endless possibilities in the world of RF electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a cost-effective and durable housing for the diodes, ensuring long-term reliability.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Optimal configuration for microwave mixing and detecting applications, enhances performance and sensitivity.

Frequency Band: ULTRA HIGH FREQUENCY

Allows for high frequency operation, making it suitable for advanced microwave systems.

Surface Mount: YES

Facilitates easy integration onto circuit boards, saving space and enhancing overall assembly efficiency.

Maximum Diode Capacitance: 1 pF

Low capacitance minimizes signal distortion and loss, ensuring high fidelity in signal processing.

Maximum Reverse Current: 0.25 uA

Low reverse current ensures minimal power consumption and enhances overall efficiency.

Package Shape: RECTANGULAR

Compact shape enables easy installation and integration into various electronic systems.

No. of Terminals: 3

Provides necessary connections for the diode elements, enabling seamless circuit integration.

Package Style (Meter): SMALL OUTLINE

Streamlined package style saves space and facilitates efficient PCB layout designs.

Maximum Operating Temperature: 100 °C

High operating temperature range allows for reliable performance in demanding environments.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and facilitates easy connections.

Minimum Breakdown Voltage: 4 V

High breakdown voltage ensures robust protection against voltage surges, enhancing device longevity.

Diode Type: MIXER DIODE

Specifically designed for microwave mixing applications, ensuring optimal performance in signal processing.

Maximum Forward Voltage (VF): 0.6 V

Low forward voltage drop minimizes power dissipation and enhances efficiency in signal detection.

Maximum Output Current: 30 A

High output current capability enables reliable signal processing and detection in demanding applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and board mounting during assembly.

No. of Elements: 2

Dual diode elements provide enhanced performance in mixing and detecting signals, improving overall sensitivity.

Maximum Noise Figure: 7 dB

Low noise figure ensures minimal signal interference and enhances signal clarity in microwave applications.

Diode Element Material: SILICON

Silicon diode material offers high reliability and performance consistency, essential for precision signal processing.

Technical Specifications

Microwave Mixer & Detector Diodes BAT17DSFILM attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

4 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

Maximum Noise Figure:

7 dB

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

100 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Reverse Current:

.25 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT17DSFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20