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BAT19-AR2

STMicroelectronics

BAT19-AR2 by STMicroelectronics

STMicroelectronics BAT19-AR2 is a single mixer diode with ultra-high frequency band, 1.2 pF capacitance, and 0.1 uA reverse current. Ideal for microwave applications due to its Schottky technology, 30 A output current, and glass package material. Operating at up to 125 °C, it offers a min breakdown voltage of 10 V for high-performance requirements.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,558 parts In-Stock

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1,558

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Anansix

USA . 524 parts In-Stock

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524

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Digiode

USA . 463 parts In-Stock

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463

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,158 parts In-Stock

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$0.040

100+ parts

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$0.036

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2,158

$0.040

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$0.036

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MKK Technologies

India . 589 parts In-Stock

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$0.074

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589

$0.074

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DigiPath Technology Company

USA . 589 parts In-Stock

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$0.074

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589

$0.074

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Native Components

USA . 658 parts In-Stock

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$88.190

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$84.662

658

$88.190

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$84.662

Northwest PG Solutions

USA . 277 parts In-Stock

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$97.009

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277

$97.009

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Corphita

USA . 4,392 parts In-Stock

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Parana Technologies

USA . 875 parts In-Stock

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$0.047

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875

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$0.047

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Overview

Elevate your RF design with the BAT19-AR2 by STMicroelectronics. Crafted with precision and expertise, this microwave mixer & detector diode offers unparalleled quality and reliability. Perfect for ultra-high frequency applications, the BAT19-AR2 delivers exceptional performance with its low diode capacitance and minimal reverse current. Whether you're working on radar systems or communication equipment, this product's Schottky technology and silicon diode element ensure optimal functionality. Trust STMicroelectronics to provide you with a cutting-edge solution that adds value to your projects.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides high mechanical strength and excellent thermal conductivity, ensuring durability and efficient heat dissipation for reliable performance.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band allows for high-speed and high-frequency signal processing, making this product suitable for advanced communication and radar systems.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current indicates minimal leakage and increased efficiency in signal detection and mixing applications, enhancing overall performance.

Package Shape: ROUND

Round package shape provides uniform stress distribution and compact design, facilitating easy integration and space-saving in various circuit layouts.

Diode Type: MIXER DIODE

As a mixer diode, this product is designed to efficiently combine and process multiple signals, making it ideal for RF and microwave applications requiring signal mixing and modulation.

Technology: SCHOTTKY

Utilizing Schottky technology ensures fast switching and low forward voltage drop, resulting in high efficiency and improved signal performance in high-frequency applications.

Technical Specifications

Microwave Mixer & Detector Diodes BAT19-AR2 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Minimum Breakdown Voltage:

10 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.1 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT19-AR2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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