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BAT1707E6327XT

Infineon Technologies

BAT1707E6327XT by Infineon Technologies

BAT1707E6327XT by Infineon Technologies is a Schottky mixer diode with 2 elements, suitable for VHF to UHF frequencies. It has a max power dissipation of 0.15W and operates b/w -55°C to 125°C. The diode's package is small outline, surface mountable, with dual terminals ideal for microwave applications.

Median Price

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Lifecycle Status

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4

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1k+

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VNN

France . 10,195 parts In-Stock

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Digiode

USA . 962 parts In-Stock

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Vyrian

USA . 664 parts In-Stock

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Nova Conductors

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Modulus Dynamics

Lithuania . 10,519 parts In-Stock

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$0.056

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$0.054

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$0.052

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Ampacity Inc.

Singapore . 1,306 parts In-Stock

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Component Stockers USA

USA . 23,168 parts In-Stock

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$2.750

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AZTECH Wire

Italy . 664 parts In-Stock

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Continental Prestige Electronics

USA . 5,012 parts In-Stock

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Argo Parts USA

USA . 771 parts In-Stock

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Bastille Electronics

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Overview

Elevate your electronic designs with the BAT1707E6327XT by Infineon Technologies. Known for their superior quality and innovation, Infineon Technologies brings you a groundbreaking Microwave Mixer & Detector Diode that offers unmatched performance in very high frequency to ultra high frequency applications. With a compact rectangular package and gull wing terminal form, this diode boasts a maximum power dissipation of 0.15W and a maximum diode capacitance of 0.75pF. Trust in Infineon Technologies to deliver cutting-edge technology that exceeds your expectations. Upgrade your projects today with the BAT1707E6327XT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, making this product a reliable choice.

Config: SEPARATE, 2 ELEMENTS

The separate 2 element configuration allows for better performance and efficiency in mixing and detecting signals.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This wide frequency band range makes this product suitable for various high-frequency applications.

Surface Mount: YES

With surface mount capability, this product is easy to install and saves space on circuit boards.

Maximum Diode Capacitance: 0.75 pF

The low diode capacitance ensures minimal interference and accurate signal processing.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and organization on circuit boards.

No. of Terminals: 4

With 4 terminals, this product offers versatility in connection options for different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient and ideal for compact electronic devices.

Maximum Operating Temperature: 125 °C

This high operating temperature range ensures reliability and stability in various environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for use in extreme cold conditions.

Terminal Position: DUAL

The dual terminal position provides flexibility in mounting and soldering options.

Maximum Power Dissipation: 0.15 W

With a maximum power dissipation of 0.15 W, this product can handle high power inputs without overheating.

Diode Type: MIXER DIODE

The mixer diode type is specifically designed for signal processing applications, ensuring accurate and efficient mixing of signals.

Technology: SCHOTTKY

The Schottky technology used in this product offers fast switching speeds and low forward voltage drop for high performance.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and connection to circuit boards.

No. of Elements: 2

With 2 elements, this product provides dual functionality for mixing and detecting signals effectively.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures stability and reliability in signal processing tasks.

Technical Specifications

Microwave Mixer & Detector Diodes BAT1707E6327XT attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Config:

SEPARATE, 2 ELEMENTS

Maximum Diode Capacitance:

.75 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G4

No. of Elements:

2

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.15 W

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAT1707E6327XT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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