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BAT15-02LRH-E6327

Infineon Technologies

BAT15-02LRH-E6327 by Infineon Technologies

Infineon's BAT15-02LRH-E6327 is a Schottky mixer diode with 0.35 pF capacitance, 0.41 V forward voltage, and 150 °C max temp. Ideal for X Band applications, it's a single-config chip carrier diode suitable for microwave mixing & detection. With low barrier Schottky technology, it operates from -55 to 150 °C with 4V breakdown voltage.

Median Price

$1.970

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 76 parts In-Stock

1+ parts

$1.970

100+ parts

$0.797

1k+ parts

$0.536

10k+ parts

$0.417

76

$1.970

$0.797

$0.536

$0.417

Distributors (In-Stock)

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Digiode

USA . 987 parts In-Stock

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$0.893

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987

$0.893

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Vyrian

USA . 172 parts In-Stock

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$0.940

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172

$0.940

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 408 parts In-Stock

1+ parts

$0.111

100+ parts

$0.107

1k+ parts

$0.102

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-

408

$0.111

$0.107

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Corphita

USA . 424 parts In-Stock

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$0.846

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424

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Assy Fe

Spain . 27,651 parts In-Stock

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A-Z Elektronik GmbH

Germany . 13,211 parts In-Stock

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13,211

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Alle Elektronik GmbH

Germany . 7,307 parts In-Stock

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7,307

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Northwest PG Solutions

USA . 275 parts In-Stock

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Native Components

USA . 3 parts In-Stock

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Overview

Experience the unbeatable quality and reliability of Infineon Technologies with the BAT15-02LRH-E6327 microwave mixer and detector diode. Ideal for X Band applications, this single-config diode offers exceptional performance and efficiency in a compact chip carrier package. With a low barrier Schottky technology and a maximum forward voltage of just 0.41V, this diode provides superior signal mixing and detection capabilities. Trust in Infineon's commitment to excellence and elevate your projects with the BAT15-02LRH-E6327.

Feature Benefit Bullets

Config: SINGLE

Single config allows for easy integration in various systems without the need for additional components.

Frequency Band: X BAND

X band frequency allows for high frequency operation, making this diode suitable for radar systems and communication applications.

Surface Mount: YES

Surface mount capability makes installation easy and saves space on PCBs.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement and alignment on the circuit board.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces chances of wiring errors.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in energy efficiency and prevents overheating of the diode.

Diode Type: MIXER DIODE

Being a mixer diode, this product is suitable for applications requiring signal mixing or frequency conversion.

Technology: SCHOTTKY

Schottky technology ensures fast switching speeds and low forward voltage drop, perfect for high frequency operations.

Diode Element Material: SILICON

Silicon diodes offer reliable performance and are widely used in various electronic circuits.

Technical Specifications

Microwave Mixer & Detector Diodes BAT15-02LRH-E6327 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

4 V

Config:

SINGLE

Maximum Diode Capacitance:

.35 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

Frequency Band:

X BAND

JESD-30 Code:

R-XBCC-N2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.11 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.1 W

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Schottky Barrier Type:

LOW BARRIER

Trade Compliance

BAT15-02LRH-E6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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