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BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.

Median Price

$0.596

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 13,926 parts In-Stock

1+ parts

$1.010

100+ parts

$0.452

1k+ parts

$0.262

10k+ parts

$0.187

13,926

$1.010

$0.452

$0.262

$0.187

Verical

USA . 750,000 parts In-Stock

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-

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750,000

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Rochester

USA . 165,000 parts In-Stock

1+ parts

-

100+ parts

$0.182

1k+ parts

$0.151

10k+ parts

$0.135

165,000

-

$0.182

$0.151

$0.135

Distributors (In-Stock)

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Digiode

USA . 936 parts In-Stock

1+ parts

$0.114

100+ parts

-

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-

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936

$0.114

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.000

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-

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50

$1.000

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Vyrian

USA . 4,985 parts In-Stock

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4,985

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VNN

France . 3,130 parts In-Stock

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3,130

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 32,575 parts In-Stock

1+ parts

$0.087

100+ parts

$0.084

1k+ parts

$0.080

10k+ parts

-

32,575

$0.087

$0.084

$0.080

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Ampacity Inc.

Singapore . 103,223 parts In-Stock

1+ parts

$0.102

100+ parts

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103,223

$0.102

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Corphita

USA . 647 parts In-Stock

1+ parts

$0.108

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647

$0.108

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.179

100+ parts

$0.163

1k+ parts

$0.147

10k+ parts

-

40

$0.179

$0.163

$0.147

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Corohmni

South Africa . 175 parts In-Stock

1+ parts

$0.188

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175

$0.188

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Netroflash

USA . 2,000 parts In-Stock

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$1.000

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2,000

$1.000

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AZTECH Wire

Italy . 101 parts In-Stock

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$11.800

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101

$11.800

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Microchip USA

USA . 16,398 parts In-Stock

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16,398

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Overview

Experience the unmatched quality and reliability of the BAT1502ELSE6327XTSA1 by Infineon Technologies, a leading manufacturer in the industry. This Microwave Mixer & Detector Diode is designed for X BAND applications, offering superior performance and versatility. With a low diode capacitance and maximum power dissipation of 0.1 W, this product ensures efficient operation even in extreme temperatures ranging from -55°C to 150°C. Trust in the advanced technology of this SCHOTTKY diode for your high-frequency needs. Elevate your projects with the value and benefits that only the BAT1502ELSE6327XTSA1 can provide.

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration provides simplicity and ease of use for basic applications.

Frequency Band: X BAND

X BAND frequency band offers high-performance characteristics suitable for radar and satellite communication systems.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying manufacturing processes.

Maximum Diode Capacitance: 0.23 pF

Low diode capacitance ensures minimal signal loss and high frequency operation.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power consumption and enhances signal integrity.

Package Shape: RECTANGULAR

Rectangular package shape offers compact size and efficient heat dissipation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range ensures functionality in extreme cold environments.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in minimizing heat generation and optimizing efficiency.

Diode Type: MIXER DIODE

Mixer diode configuration enables signal mixing and detection in microwave applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop for high frequency applications.

Schottky Barrier Type: LOW BARRIER

Low barrier Schottky diode ensures efficient signal rectification and low power losses.

Diode Element Material: SILICON

Silicon diode material offers reliability, durability, and consistent performance over a wide temperature range.

Technical Specifications

Microwave Mixer & Detector Diodes BAT1502ELSE6327XTSA1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

4 V

Config:

SINGLE

Maximum Diode Capacitance:

.23 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

Frequency Band:

X BAND

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.11 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Power Dissipation:

.1 W

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Schottky Barrier Type:

LOW BARRIER

Trade Compliance

BAT1502ELSE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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