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NSVMMBD352WT1G

Onsemi

NSVMMBD352WT1G by Onsemi

NSVMMBD352WT1G by Onsemi is a Schottky mixer diode with matte tin finish. It operates at max temp of 150°C, peak reflow temp of 260°C, and can withstand 30s at peak reflow temp. Ideal for microwave applications due to its surface mount capability.

Median Price

$0.210

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,362 parts In-Stock

1+ parts

$0.210

100+ parts

$0.110

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$0.091

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2,362

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$0.091

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Mouser Electronics

USA . 2,308 parts In-Stock

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$0.210

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$0.101

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$0.092

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$0.081

2,308

$0.210

$0.101

$0.092

$0.081

Verical

USA . 30,000 parts In-Stock

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$0.071

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$0.071

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Digiode

USA . 555 parts In-Stock

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$0.494

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555

$0.494

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Vyrian

USA . 2,453 parts In-Stock

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$0.520

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2,453

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Chip Stock

USA . 68,000 parts In-Stock

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Flip Electronics

USA . 18,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,589 parts In-Stock

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$0.468

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1,589

$0.468

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Corohmni

South Africa . 147 parts In-Stock

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$0.500

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147

$0.500

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QUARKTWIN TECHNOLOGY LTD

USA . 25,937 parts In-Stock

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25,937

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TANS Electronics

Latvia . 7,861 parts In-Stock

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7,861

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Problanco Electronics

Mexico . 7,000 parts In-Stock

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7,000

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Kulean Microsystems

USA . 5,782 parts In-Stock

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Perfect Parts

USA . 1,320 parts In-Stock

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SupplyDigital Components

Austria . 632 parts In-Stock

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UHIMA Technologies

Türkiye . 360 parts In-Stock

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360

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Overview

Experience the next level of performance and reliability with the NSVMMBD352WT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and innovation in their Microwave Mixer & Detector Diodes category. This surface-mount diode boasts a maximum operating temperature of 150°C and matte tin terminal finish, making it ideal for a wide range of applications. Enhance your projects with superior technology and efficiency that only Onsemi can provide. Upgrade to the NSVMMBD352WT1G and elevate your electronics to new heights.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are easier to install and take up less space compared to through-hole diodes, making this product more versatile for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode is suitable for use in a wide range of environments and applications without the risk of overheating.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good corrosion resistance and conductivity, ensuring reliable performance and longevity of the diode.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature indicates that this diode can be quickly and efficiently soldered onto circuit boards, saving time during manufacturing processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this diode can withstand the soldering process without getting damaged, ensuring the reliability of the connection.

Diode Type: MIXER DIODE

Mixer diodes are specifically designed for frequency mixing applications, making this product ideal for RF and microwave circuits that require signal processing and modulation.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching speed, making them suitable for high-frequency applications where low power loss and minimal signal distortion are crucial.

Diode Element Material: SILICON

Silicon diodes offer good thermal conductivity and are commonly used in a wide range of electronic devices, ensuring compatibility with various circuit designs.

Technical Specifications

Microwave Mixer & Detector Diodes NSVMMBD352WT1G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSVMMBD352WT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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