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DAN222M3T5G

Onsemi

DAN222M3T5G by Onsemi

DAN222M3T5G by Onsemi is a microwave mixer & detector diode with common cathode, 2 elements config. It has a max diode capacitance of 3.5 pF and operates at up to 150°C. Ideal for applications requiring small outline package style and high-speed performance in RF circuits.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 24,013 parts In-Stock

1+ parts

$0.150

100+ parts

$0.080

1k+ parts

$0.042

10k+ parts

$0.027

24,013

$0.150

$0.080

$0.042

$0.027

Mouser Electronics

USA . 7,211 parts In-Stock

1+ parts

$0.150

100+ parts

$0.080

1k+ parts

$0.038

10k+ parts

$0.027

7,211

$0.150

$0.080

$0.038

$0.027

Rochester

USA . 650,602 parts In-Stock

1+ parts

-

100+ parts

$0.031

1k+ parts

$0.026

10k+ parts

$0.023

650,602

-

$0.031

$0.026

$0.023

Verical

USA . 402,602 parts In-Stock

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402,602

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Arrow

USA . 80,000 parts In-Stock

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Chip1Stop

Japan . 8,000 parts In-Stock

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$0.031

8,000

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$0.031

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 6,322 parts In-Stock

1+ parts

$0.020

100+ parts

$0.019

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$0.018

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-

6,322

$0.020

$0.019

$0.018

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Digiode

USA . 2,195 parts In-Stock

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$0.027

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2,195

$0.027

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Vyrian

USA . 181 parts In-Stock

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$0.028

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181

$0.028

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Maritex

Poland . 7,198 parts In-Stock

1+ parts

$0.048

100+ parts

$0.026

1k+ parts

$0.025

10k+ parts

$0.022

7,198

$0.048

$0.026

$0.025

$0.022

Cyclops Electronics Ltd

UK . 68,756 parts In-Stock

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68,756

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NAC Semi

USA . 8,000 parts In-Stock

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$0.117

8,000

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$0.117

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,879 parts In-Stock

1+ parts

$0.025

100+ parts

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1,879

$0.025

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Corohmni

South Africa . 97 parts In-Stock

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$0.028

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97

$0.028

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Component Stockers USA

USA . 542,972 parts In-Stock

1+ parts

$0.030

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$0.030

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$0.020

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$0.020

542,972

$0.030

$0.030

$0.020

$0.020

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.191

100+ parts

$0.174

1k+ parts

$0.157

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100

$0.191

$0.174

$0.157

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Native Components

USA . 3 parts In-Stock

1+ parts

$0.639

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3

$0.639

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Northwest PG Solutions

USA . 203 parts In-Stock

1+ parts

$0.703

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203

$0.703

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Futuretech Components

Singapore . 64,000 parts In-Stock

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Kepictronics

USA . 24,000 parts In-Stock

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Perfect Parts

USA . 17,920 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,609 parts In-Stock

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iodParts Technologies Inc.

India . 11,240 parts In-Stock

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$0.047

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$0.047

Eastek

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 7,379 parts In-Stock

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Kulean Microsystems

USA . 6,127 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Lixinc

USA . 1,569 parts In-Stock

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SupplyDigital Components

Austria . 1,458 parts In-Stock

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TANS Electronics

Latvia . 857 parts In-Stock

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UHIMA Technologies

Türkiye . 646 parts In-Stock

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646

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Overview

Unleash the power of cutting-edge technology with the DAN222M3T5G by Onsemi. Designed with precision and reliability in mind, this microwave mixer & detector diode offers unparalleled performance in a compact package. Whether you're looking to enhance your communication systems, radar applications, or test and measurement equipment, this product delivers exceptional quality and value. Trust in Onsemi's reputation for excellence and choose the DAN222M3T5G for all your advanced electronic needs. Elevate your projects to new heights with this innovative solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material suitable for various applications.

Surface Mount: YES

Easy to install and saves space on PCB.

Maximum Diode Capacitance: 3.5 pF

Low capacitance ensures efficient performance in high-frequency applications.

Maximum Reverse Recovery Time: 0.004 us

Fast recovery time ensures minimal signal distortion and improved efficiency.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various operating environments.

Terminal Finish: MATTE TIN

Provides good conductivity and corrosion resistance.

Maximum Power Dissipation: 0.26 W

Efficient power handling capability for reliable operation.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop for energy-efficient operation.

Maximum Output Current: 0.1 A

Sufficient output current for various applications.

Maximum Repetitive Peak Reverse Voltage: 80 V

Can handle high reverse voltages for added reliability.

Technical Specifications

Microwave Mixer & Detector Diodes DAN222M3T5G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Maximum Diode Capacitance:

3.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.26 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DAN222M3T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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