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SBL-801

Onsemi

SBL-801 by Onsemi

SBL-801 by Onsemi is a surface mount mixer diode with GaAs element. It operates b/w 11-100 GHz, with max temp of 150 °C. Ideal for microwave applications requiring high frequency mixing and detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,478 parts In-Stock

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Digiode

USA . 2,178 parts In-Stock

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Kulean Microsystems

USA . 4,598 parts In-Stock

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TANS Electronics

Latvia . 1,912 parts In-Stock

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SupplyDigital Components

Austria . 1,568 parts In-Stock

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Corphita

USA . 1,414 parts In-Stock

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UHIMA Technologies

Türkiye . 602 parts In-Stock

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Problanco Electronics

Mexico . 249 parts In-Stock

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Corohmni

South Africa . 203 parts In-Stock

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Overview

Experience the superior quality and reliability of the SBL-801 by Onsemi, a leading manufacturer in the industry. This microwave mixer and detector diode offers exceptional performance from 11 GHz to 100 GHz, making it perfect for a wide range of applications. With surface mount capabilities and a maximum operating temperature of 150 °C, this diode is a game-changer for your projects. Trust Onsemi's expertise and innovation to take your designs to the next level with the SBL-801.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and convenient installation onto circuit boards, saving time and reducing complexity during assembly.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance, ensuring reliable operation in various environments.

Diode Type: MIXER DIODE

Mixer diodes are essential components for microwave signal processing, enabling efficient mixing of different frequency signals in applications such as communication systems and radar systems.

Minimum Operating Frequency: 11 GHz

The low minimum operating frequency allows this product to effectively handle signals in the microwave range, making it suitable for high-frequency applications where precision and accuracy are crucial.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide diodes offer high electron mobility and low noise characteristics, making them ideal for microwave applications requiring fast switching speeds and minimal signal distortion.

Maximum Operating Frequency: 100 GHz

With a high maximum operating frequency, this product can process signals at extremely high frequencies, catering to advanced microwave systems and applications that demand superior performance.

Technical Specifications

Microwave Mixer & Detector Diodes SBL-801 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

100 GHz

Minimum Operating Frequency:

11 GHz

Maximum Operating Temperature:

150 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

SBL-801 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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