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SBL-804

Onsemi

SBL-804 by Onsemi

SBL-804 by Onsemi is a surface mount microwave mixer diode with GaAs element. It operates from 11 GHz to 100 GHz, with max temp of 150 °C. Ideal for RF applications requiring high frequency mixing and detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,398 parts In-Stock

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Vyrian

USA . 1,946 parts In-Stock

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Kulean Microsystems

USA . 7,781 parts In-Stock

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7,781

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SupplyDigital Components

Austria . 3,393 parts In-Stock

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Corphita

USA . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 971 parts In-Stock

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971

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Problanco Electronics

Mexico . 960 parts In-Stock

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TANS Electronics

Latvia . 753 parts In-Stock

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Corohmni

South Africa . 173 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the SBL-804 by Onsemi, a leading manufacturer in the industry. This surface mount microwave mixer & detector diode offers exceptional performance in a wide range of applications. From 11 GHz to 100 GHz, this gallium arsenide diode provides unmatched value and benefits to customers looking for precision and efficiency. Upgrade your projects with the SBL-804 and experience a new level of excellence.

Feature Benefit Bullets

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on a circuit board, making the product suitable for mass production and integration into various systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliability and stability even under intense operating conditions, making it suitable for demanding applications.

Diode Type: MIXER DIODE

The mixer diode type indicates that the product is designed for mixing or combining signals in microwave applications, making it ideal for communication systems and radar systems.

Minimum Operating Frequency: 11 GHz

The low minimum operating frequency of 11 GHz allows for precise and efficient signal processing at high frequencies, making the product suitable for advanced communication and radar systems.

Diode Element Material: GALLIUM ARSENIDE

The use of gallium arsenide as the diode element material ensures high performance and low noise characteristics, making the product suitable for sensitive signal detection and processing applications.

Maximum Operating Frequency: 100 GHz

The high maximum operating frequency of 100 GHz allows for broad frequency coverage and enables the product to handle a wide range of signals, making it versatile for various microwave applications.

Technical Specifications

Microwave Mixer & Detector Diodes SBL-804 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

100 GHz

Minimum Operating Frequency:

11 GHz

Maximum Operating Temperature:

150 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

SBL-804 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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