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DAP222M3T5G

Onsemi

DAP222M3T5G by Onsemi

DAP222M3T5G by Onsemi is a microwave mixer diode with common anode config, 2 elements, and 3.5 pF capacitance. It is used in applications requiring small outline surface mount diodes for high-frequency signal mixing and detection at temperatures up to 150°C.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,831 parts In-Stock

1+ parts

$0.140

100+ parts

$0.080

1k+ parts

$0.037

10k+ parts

$0.026

11,831

$0.140

$0.080

$0.037

$0.026

DigiKey

USA . 22,515 parts In-Stock

1+ parts

$0.230

100+ parts

$0.086

1k+ parts

$0.055

10k+ parts

$0.036

22,515

$0.230

$0.086

$0.055

$0.036

Rochester

USA . 21,996 parts In-Stock

1+ parts

-

100+ parts

$0.031

1k+ parts

$0.026

10k+ parts

$0.023

21,996

-

$0.031

$0.026

$0.023

Verical

USA . 13,996 parts In-Stock

1+ parts

-

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-

1k+ parts

-

10k+ parts

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13,996

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,169 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

1,169

$0.024

-

-

-

Vyrian

USA . 2,323 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

2,323

$0.025

-

-

-

NAC Semi

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.055

32,000

-

-

-

$0.055

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 647 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

647

$0.022

-

-

-

Corohmni

South Africa . 136 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

136

$0.025

-

-

-

Native Components

USA . 458 parts In-Stock

1+ parts

$0.641

100+ parts

-

1k+ parts

-

10k+ parts

-

458

$0.641

-

-

-

Northwest PG Solutions

USA . 1,314 parts In-Stock

1+ parts

$0.705

100+ parts

-

1k+ parts

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1,314

$0.705

-

-

-

Perfect Parts

USA . 26,718 parts In-Stock

1+ parts

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26,718

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QUARKTWIN TECHNOLOGY LTD

USA . 21,293 parts In-Stock

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21,293

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Kepictronics

USA . 12,040 parts In-Stock

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12,040

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

1+ parts

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8,000

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SupplyDigital Components

Austria . 7,983 parts In-Stock

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7,983

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Kulean Microsystems

USA . 7,002 parts In-Stock

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7,002

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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GreenTree Electronics

Israel . 2,995 parts In-Stock

1+ parts

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2,995

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TANS Electronics

Latvia . 2,119 parts In-Stock

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2,119

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Problanco Electronics

Mexico . 488 parts In-Stock

1+ parts

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488

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UHIMA Technologies

Türkiye . 359 parts In-Stock

1+ parts

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359

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Overview

Unleash the power of innovation with the DAP222M3T5G by Onsemi. As a leader in the industry, Onsemi ensures top-notch quality and reliability in every product. The DAP222M3T5G falls under the category of Microwave Mixer & Detector Diodes, making it ideal for a wide range of applications. From communications to radar systems, this product offers unparalleled value and benefits to customers. With its common anode configuration, 2 elements, and compact small outline package style, the DAP222M3T5G delivers exceptional performance and efficiency. Upgrade your technology with Onsemi's cutting-edge solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, perfect for portable or rugged applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient signal mixing and detection, enhancing overall performance.

Surface Mount: YES

Being surface mountable makes installation and integration easier, saving time and effort in the production process.

Maximum Diode Capacitance: 3.5 pF

Low diode capacitance ensures minimal signal loss and distortion, maintaining signal integrity for accurate measurements.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, optimizing space utilization in the circuit layout.

No. of Terminals: 3

Having 3 terminals allows for versatile connection options, supporting different circuit configurations and applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves valuable board space, making it ideal for crowded PCB layouts or miniaturized devices.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the diodes can withstand high temperature environments, ensuring reliability under challenging conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring secure and reliable connections for long-term use.

Terminal Position: DUAL

Dual terminal positions offer flexibility in mounting and connection, accommodating different PCB layouts and assembly requirements.

Maximum Power Dissipation: 0.26 W

The high power dissipation capability of 0.26 W allows the diodes to handle higher power levels without overheating, ensuring stable performance in demanding applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, the diodes can withstand reflow soldering processes without degradation, simplifying assembly operations.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C complies with industry standards, ensuring proper soldering and reflow processes for reliable connections.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for RF and microwave applications, providing accurate signal mixing and detection for high-frequency circuits.

Terminal Form: FLAT

The flat terminal form simplifies soldering and handling during assembly, ensuring secure attachment for stable electrical connections.

No. of Elements: 2

Having 2 diode elements allows for efficient signal processing, enhancing performance in mixer and detector circuits for precise measurements.

Diode Element Material: SILICON

Utilizing silicon as the diode element material offers reliability and consistent performance, making the product suitable for a wide range of RF and microwave applications.

Technical Specifications

Microwave Mixer & Detector Diodes DAP222M3T5G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Maximum Diode Capacitance:

3.5 pF

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.26 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DAP222M3T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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