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MMBD301L

Onsemi

MMBD301L by Onsemi

The Onsemi MMBD301L is a single Schottky mixer diode with a max forward voltage of 0.45V and a max repetitive peak reverse voltage of 30V. It operates in the very high frequency to ultra high frequency range, making it suitable for applications requiring small outline surface mount diodes in microwave circuits. With a package style of small outline and gull wing terminal form, it can handle temperatures from -55 °C to 125°C efficiently.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Legend Electronics Inc.

USA . 2,776 parts In-Stock

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Vyrian

USA . 2,465 parts In-Stock

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Digiode

USA . 275 parts In-Stock

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DF Sales Co.

USA . 220 parts In-Stock

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DF Sales Co.

USA . 220 parts In-Stock

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TANS Electronics

Latvia . 7,608 parts In-Stock

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SupplyDigital Components

Austria . 4,671 parts In-Stock

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Kulean Microsystems

USA . 3,260 parts In-Stock

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Perfect Parts

USA . 2,505 parts In-Stock

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Corphita

USA . 2,345 parts In-Stock

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UHIMA Technologies

Türkiye . 612 parts In-Stock

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Problanco Electronics

Mexico . 202 parts In-Stock

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Corohmni

South Africa . 73 parts In-Stock

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Overview

Enhance your electronic designs with the MMBD301L by Onsemi, a top-quality Microwave Mixer & Detector Diode. Manufactured by the trusted brand Onsemi, this diode offers unparalleled performance in very high frequency to ultra high frequency applications. With a small outline package and dual terminal position, this diode is perfect for surface mount applications. Experience the benefits of reliable Schottky technology, low forward voltage, and high power dissipation capabilities. Elevate your projects with the MMBD301L and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances the durability and reliability of the product, making it resistant to environmental factors.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

The wide frequency band allows for versatile use across a range of frequencies, making it suitable for various applications.

Surface Mount: YES

The surface mount design makes installation and integration easier and more efficient, saving time and effort during assembly.

Maximum Diode Capacitance: 1.5 pF

The low diode capacitance ensures minimal signal loss and distortion, resulting in accurate and precise performance.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-efficient design, ideal for devices with limited space constraints.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable operation even in harsh environmental conditions, ensuring consistent performance.

Diode Type: MIXER DIODE

The mixer diode type is specifically designed for signal mixing applications, offering high efficiency and performance in signal processing.

Technology: SCHOTTKY

The Schottky technology delivers fast switching speeds and low forward voltage drop, enhancing the overall performance and efficiency of the diode.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD301L attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

MMBD301L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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