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BAR11-AR1

STMicroelectronics

BAR11-AR1 by STMicroelectronics

STMicroelectronics' BAR11-AR1 is a single Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications, it features an isolated round glass package with axial terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,584 parts In-Stock

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4,584

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Anansix

USA . 863 parts In-Stock

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863

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Digiode

USA . 793 parts In-Stock

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793

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 507 parts In-Stock

1+ parts

$0.104

100+ parts

-

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$0.094

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507

$0.104

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$0.094

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MKK Technologies

India . 432 parts In-Stock

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$0.195

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432

$0.195

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DigiPath Technology Company

USA . 432 parts In-Stock

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$0.195

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432

$0.195

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Native Components

USA . 46 parts In-Stock

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$1.937

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46

$1.937

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Northwest PG Solutions

USA . 1,502 parts In-Stock

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$2.131

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1,502

$2.131

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Parana Technologies

USA . 1,597 parts In-Stock

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$0.124

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1,597

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$0.124

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Corphita

USA . 120 parts In-Stock

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120

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Overview

Elevate your microwave systems with the BAR11-AR1 by STMicroelectronics. Crafted with precision and expertise, this high-quality mixer diode offers unparalleled performance in very high frequency to ultra-high frequency applications. Its innovative Schottky technology ensures optimal signal mixing and detection, while the robust glass package guarantees durability and reliability in a variety of environments. Experience seamless integration and superior results with the BAR11-AR1, a product that embodies excellence in every aspect. Elevate your projects with STMicroelectronics and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass material for the package body provides excellent mechanical stability and high temperature resistance, ensuring durability and reliability for the product.

Configuration: SINGLE

Single configuration simplifies the design and integration process, making it easier to use and maintain.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Covers a wide frequency range, making it suitable for a variety of applications requiring high frequency operation.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance allows for high-speed operation and low signal distortion, making it ideal for high-frequency applications.

Package Shape: ROUND

Round package shape provides efficient heat dissipation and compact design, making it easy to integrate into different systems.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces chances of errors in wiring.

Package Style (Meter): LONG FORM

Long form package style allows for easy handling and integration into various systems, providing flexibility in installation.

Maximum Operating Temperature: 200 °C

High maximum operating temperature ensures the device can perform reliably in extreme conditions without overheating.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for operation in a wide range of environmental conditions, increasing versatility.

Terminal Position: AXIAL

Axial terminal position makes it easy to connect and secure the diode in place, ensuring stable performance.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and signal distortion, ensuring accurate and clean signal processing.

Diode Type: MIXER DIODE

Specialized mixer diode type allows for high-performance mixing and signal processing, making it ideal for applications requiring signal modulation.

Technology: SCHOTTKY

Schottky technology offers high-speed operation and low power loss, resulting in efficient and reliable performance for the diode.

Terminal Form: WIRE

Wire terminal form provides flexibility in connection and installation, allowing for easy integration into various systems.

Diode Element Material: SILICON

Silicon material for the diode element offers high reliability and performance, ensuring long-term functionality of the product.

Technical Specifications

Microwave Mixer & Detector Diodes BAR11-AR1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAR11-AR1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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