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BAT17-04WH6327

Infineon Technologies

BAT17-04WH6327 by Infineon Technologies

Infineon's BAT17-04WH6327 is a Schottky mixer diode with 2 elements, 0.75 pF capacitance, and 0.6 V forward voltage. It operates in the very high to ultra high frequency band for applications like microwave mixers and detectors. The diode has a max power dissipation of 0.15 W and can handle temperatures from -55°C to 125°C.

Median Price

$0.202

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 47,858 parts In-Stock

1+ parts

$0.088

100+ parts

$0.083

1k+ parts

$0.075

10k+ parts

-

47,858

$0.088

$0.083

$0.075

-

Mouser Electronics

USA . 15,730 parts In-Stock

1+ parts

$0.490

100+ parts

$0.195

1k+ parts

$0.129

10k+ parts

$0.087

15,730

$0.490

$0.195

$0.129

$0.087

Verical

USA . 14,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.202

10k+ parts

$0.186

14,980

-

-

$0.202

$0.186

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 958 parts In-Stock

1+ parts

$0.084

100+ parts

-

1k+ parts

-

10k+ parts

-

958

$0.084

-

-

-

Vyrian

USA . 307 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

307

$0.088

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 270 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

-

270

$0.079

-

-

-

Modulus Dynamics

Lithuania . 8,942 parts In-Stock

1+ parts

$0.196

100+ parts

$0.188

1k+ parts

$0.180

10k+ parts

-

8,942

$0.196

$0.188

$0.180

-

CoreStaff

Japan . 14,980 parts In-Stock

1+ parts

$0.276

100+ parts

$0.161

1k+ parts

$0.108

10k+ parts

-

14,980

$0.276

$0.161

$0.108

-

Native Components

USA . 25 parts In-Stock

1+ parts

$7.710

100+ parts

-

1k+ parts

-

10k+ parts

-

25

$7.710

-

-

-

Perfect Parts

USA . 94,073 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

94,073

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,000

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 2,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,912

-

-

-

-

Northwest PG Solutions

USA . 770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$7.556

10k+ parts

-

770

-

-

$7.556

-

Overview

Discover the ultimate solution for your microwave mixing and detecting needs with the BAT17-04WH6327 by Infineon Technologies. Crafted with precision and expertise, this series connected diode offers unparalleled performance in very high frequency to ultra-high-frequency applications. Its advanced technology and quality construction ensure reliable operation and maximum efficiency. Say goodbye to compromise and experience the superior results that only the BAT17-04WH6327 can deliver. Choose excellence, choose Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, making the product long-lasting and reliable.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Covers a wide range of frequencies, making it versatile for various applications requiring high frequency signals.

Maximum Diode Capacitance: 0.75 pF

Low capacitance ensures efficient signal processing and minimal interference.

Maximum Reverse Current: 10 uA

Low reverse current results in better signal fidelity and reduced power consumption.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, allowing for use in demanding environments.

Technical Specifications

Microwave Mixer & Detector Diodes BAT17-04WH6327 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

4 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

.75 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.15 W

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

4 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAT17-04WH6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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