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MMBD352WT1

Onsemi

MMBD352WT1 by Onsemi

MMBD352WT1 by Onsemi is a microwave mixer & detector diode with 2 elements, Schottky technology, and ultra high frequency band. It has a max operating temperature of 150 °C and package style in small outline for surface mount applications. Ideal for RF signal mixing and detection in electronic circuits.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,998 parts In-Stock

1+ parts

-

100+ parts

$0.110

1k+ parts

$0.091

10k+ parts

$0.081

1,998

-

$0.110

$0.091

$0.081

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 66 parts In-Stock

1+ parts

$0.086

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-

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66

$0.086

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Vyrian

USA . 1,777 parts In-Stock

1+ parts

$0.090

100+ parts

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1,777

$0.090

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Electronics Depot

USA . 964 parts In-Stock

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964

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Sunrise Surplus Inc.

USA . 483 parts In-Stock

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483

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Distributors (Availability)

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Corphita

USA . 432 parts In-Stock

1+ parts

$0.081

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432

$0.081

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Component Stockers USA

USA . 2,974 parts In-Stock

1+ parts

$0.090

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

-

2,974

$0.090

$0.090

$0.080

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Corohmni

South Africa . 295 parts In-Stock

1+ parts

$0.090

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295

$0.090

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QUARKTWIN TECHNOLOGY LTD

USA . 24,543 parts In-Stock

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24,543

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Problanco Electronics

Mexico . 5,649 parts In-Stock

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5,649

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SupplyDigital Components

Austria . 3,589 parts In-Stock

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3,589

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TANS Electronics

Latvia . 1,743 parts In-Stock

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1,743

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Kulean Microsystems

USA . 1,311 parts In-Stock

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1,311

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UHIMA Technologies

Türkiye . 907 parts In-Stock

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907

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Overview

Enhance your electronic projects with the MMBD352WT1 by Onsemi, a top-quality Microwave Mixer & Detector Diode that delivers exceptional performance. Manufactured by Onsemi, a trusted industry leader, this diode features ultra-high frequency capabilities and a compact design for easy integration. With a maximum power dissipation of 0.2W and a Schottky technology, this diode offers unparalleled reliability and efficiency. Perfect for a wide range of applications, this diode is ideal for those seeking high-quality components that deliver consistent results. Elevate your projects with the MMBD352WT1 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, making the product reliable for long-term use.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high frequency applications, making it suitable for high-performance microwave systems.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal interference and signal loss, leading to better overall performance of the microwave mixer.

No. of Terminals: 3

Three terminals provide easy and secure connection, enhancing the installation process and ensuring stable operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance.

Diode Type: MIXER DIODE

Specifically designed as mixer diodes, ensuring efficient and accurate mixing of microwave signals in various applications.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD352WT1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD352WT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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