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BAT19-AZ1

STMicroelectronics

BAT19-AZ1 by STMicroelectronics

STMicroelectronics BAT19-AZ1 is a single mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it operates at up to 125 °C with a breakdown voltage of 10V. The Schottky diode has a max forward voltage of 1V and can handle output currents up to 30A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,631 parts In-Stock

1+ parts

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2,631

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Anansix

USA . 2,336 parts In-Stock

1+ parts

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2,336

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Vyrian

USA . 193 parts In-Stock

1+ parts

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193

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,916 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

$0.033

10k+ parts

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1,916

$0.037

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$0.033

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MKK Technologies

India . 1,306 parts In-Stock

1+ parts

$0.069

100+ parts

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1,306

$0.069

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DigiPath Technology Company

USA . 1,306 parts In-Stock

1+ parts

$0.069

100+ parts

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1,306

$0.069

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Native Components

USA . 367 parts In-Stock

1+ parts

$171.750

100+ parts

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$164.880

367

$171.750

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$164.880

Northwest PG Solutions

USA . 617 parts In-Stock

1+ parts

$188.925

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617

$188.925

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Parana Technologies

USA . 2,345 parts In-Stock

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$0.044

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2,345

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$0.044

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Corphita

USA . 1,795 parts In-Stock

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1,795

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Overview

Enhance your electronic projects with the BAT19-AZ1 by STMicroelectronics, a top-of-the-line Microwave Mixer & Detector Diode designed for ultra-high frequency applications. With a reputation for excellence in manufacturing, STMicroelectronics delivers unmatched quality and reliability. This single-config diode boasts superior performance with a low diode capacitance and reverse current, making it ideal for demanding projects. Trust in the value and benefits that this product offers, providing you with the advantage you need to excel in your designs. Elevate your projects with the BAT19-AZ1 today.

Feature Benefit Bullets

Package Body Material: GLASS

Glass is a reliable and durable material for packaging, ensuring the diode is protected from external elements and can operate efficiently for a long time.

Config: SINGLE

Single configuration simplifies the setup and reduces complexity in circuit design, making the product easier to use and integrate.

Frequency Band: ULTRA HIGH FREQUENCY

Ultra high frequency allows for high-speed signal processing and communication, making the product suitable for advanced applications requiring fast data transfer.

Maximum Diode Capacitance: 1.2 pF

Low diode capacitance ensures minimal signal loss and distortion, leading to high performance and accuracy in signal processing.

Maximum Reverse Current: 0.1 uA

Low reverse current enhances the overall efficiency and reliability of the diode, ensuring minimal power consumption and heat generation.

Package Shape: ROUND

Round package shape enables easy mounting and secure connection, making installation and maintenance hassle-free.

No. of Terminals: 2

Having 2 terminals simplifies the connectivity and ensures compatibility with standard circuit configurations, making the product versatile and easy to integrate.

Package Style (Meter): LONG FORM

Long form package style provides ample space for internal components and efficient heat dissipation, resulting in better performance and longevity.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the diode to function in extreme conditions without compromising its performance, ensuring reliability in various environments.

Terminal Position: AXIAL

Axial terminal position simplifies the soldering process and ensures a secure connection, enhancing the overall stability and durability of the product.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures signal integrity, making the product suitable for precise signal detection and processing applications.

Minimum Breakdown Voltage: 10 V

High minimum breakdown voltage protects the diode from voltage spikes and fluctuations, ensuring long-term durability and reliability.

Diode Type: MIXER DIODE

Mixer diode type is specifically designed for mixing different signal frequencies, making the product ideal for frequency conversion and modulation applications.

Maximum Forward Voltage (VF): 1 V

Low forward voltage ensures efficient signal transmission and minimal power loss, resulting in high performance and energy efficiency.

Maximum Output Current: 30 A

High maximum output current allows the diode to handle large signal loads and ensures reliable signal processing in high-power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, enhancing the overall performance and efficiency of the diode.

Terminal Form: WIRE

Wire terminal form provides a versatile and reliable connection option, making the product suitable for a wide range of circuit designs and applications.

Diode Element Material: SILICON

Silicon diode element material offers high thermal stability and low forward resistance, resulting in reliable and consistent performance over a wide temperature range.

Technical Specifications

Microwave Mixer & Detector Diodes BAT19-AZ1 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Additional Features:

MATCHED BATCH AVAILABLE

Minimum Breakdown Voltage:

10 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

1.2 pF

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

30 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.1 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT19-AZ1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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