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STDD15-05W

STMicroelectronics

STDD15-05W by STMicroelectronics

STDD15-05W by STMicroelectronics is a dual-element mixer diode designed for microwave applications. It features a max reverse voltage of 15V, low capacitance of 1pF, and operates up to 150 °C. Ideal for high-frequency signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,353 parts In-Stock

1+ parts

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1,353

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Anansix

USA . 865 parts In-Stock

1+ parts

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865

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Digiode

USA . 331 parts In-Stock

1+ parts

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331

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,110 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

$0.052

10k+ parts

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2,110

$0.058

-

$0.052

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MKK Technologies

India . 757 parts In-Stock

1+ parts

$0.109

100+ parts

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757

$0.109

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DigiPath Technology Company

USA . 757 parts In-Stock

1+ parts

$0.109

100+ parts

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757

$0.109

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Kepictronics

USA . 45,000 parts In-Stock

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45,000

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Corphita

USA . 4,330 parts In-Stock

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4,330

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Parana Technologies

USA . 1,207 parts In-Stock

1+ parts

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$0.069

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1,207

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$0.069

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Overview

Unlock the potential of your high-frequency applications with the STDD15-05W from STMicroelectronics, a leader in innovative semiconductor solutions. This microwave mixer and detector diode promises exceptional performance with unmatched reliability, ensuring seamless integration into your designs. With its compact surface mount technology and robust thermal characteristics, it excels in telecommunications, satellite systems, and RF applications, providing customers with enhanced efficiency and superior signal integrity. Elevate your projects with STMicroelectronics' commitment to quality and cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures reliability and protection against environmental factors, enhancing the product's lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies integration in circuits, making it easier to design with and saving space.

Surface Mount: YES

Surface mount technology allows for compact designs, enabling higher density circuit layouts and reducing assembly costs.

Maximum Diode Capacitance: 1 pF

A low maximum diode capacitance minimizes signal degradation, ensuring better performance in high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on circuit boards, optimizing overall design efficiency.

No. of Terminals: 3

Having three terminals provides flexibility in circuit design, allowing for easier connections and better functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is ideal for compact electronic devices, making the product versatile for various applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this diode to perform effectively in demanding environments without failure.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures strong solder joints and prevents oxidation, contributing to reliable connections over time.

Terminal Position: DUAL

The dual terminal position enhances the ease of installation and facilitates better accessibility when soldering to PCBs.

Diode Type: MIXER DIODE

As a mixer diode, it is specifically designed for signal mixing applications, providing optimal performance in RF and microwave circuits.

Terminal Form: GULL WING

The gull wing form provides excellent mechanical support and ease of handling during assembly, improving manufacturing efficiency.

No. of Elements: 2

With two elements, this diode can handle more complex mixing applications, providing improved performance and versatility.

Maximum Repetitive Peak Reverse Voltage: 15 V

A maximum reverse voltage of 15V makes it suitable for use in low-voltage applications while maintaining robust operation.

Diode Element Material: SILICON

Silicon as the diode element material contributes to high reliability and stability, ensuring consistent performance over time.

Technical Specifications

Microwave Mixer & Detector Diodes STDD15-05W attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from STMicroelectronics

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STDD15-05W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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