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MMBD354LT3

Onsemi

MMBD354LT3 by Onsemi

MMBD354LT3 by Onsemi is a microwave mixer & detector diode with common cathode, 2 elements. It operates in the ultra high frequency band and has a max diode capacitance of 1 pF. This small outline package diode is ideal for applications requiring high frequency mixing and detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,243 parts In-Stock

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Digiode

USA . 93 parts In-Stock

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TANS Electronics

Latvia . 7,662 parts In-Stock

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7,662

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SupplyDigital Components

Austria . 6,002 parts In-Stock

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Problanco Electronics

Mexico . 2,145 parts In-Stock

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Kulean Microsystems

USA . 1,046 parts In-Stock

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UHIMA Technologies

Türkiye . 938 parts In-Stock

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Corphita

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Corohmni

South Africa . 226 parts In-Stock

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Overview

Looking for high-quality microwave mixer & detector diodes? Look no further than the MMBD354LT3 by Onsemi. With a common cathode configuration and ultra-high frequency band, this product is perfect for a variety of applications. Designed with a small outline package style and gull wing terminal form, this diode offers outstanding performance and reliability. Trust Onsemi's reputation for excellence and innovation to deliver top-notch products that exceed expectations. Upgrade your projects with the MMBD354LT3 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the diodes, making this product long-lasting and reliable.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient mixing and detection of signals, making this product suitable for various applications.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band enables this product to handle high frequency signals with precision and accuracy.

Surface Mount: YES

The surface mount capability makes installation and soldering easy, saving time and effort during assembly.

Maximum Diode Capacitance: 1 pF

With a maximum capacitance of 1 pF, this product ensures low signal loss and high efficiency in signal processing.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit boards, optimizing space and layout design.

No. of Terminals: 3

Having 3 terminals provides versatile connectivity options, enhancing flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs, ideal for applications with limited space constraints.

Terminal Finish: TIN LEAD

The terminal finish of tin lead ensures good conductivity and solderability, enhancing the overall performance and reliability of the product.

Terminal Position: DUAL

The dual terminal position offers multiple connection points for better signal routing and improved signal integrity.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, this product can handle high power levels without overheating, ensuring stable performance in demanding applications.

Diode Type: MIXER DIODE

Being a mixer diode, this product is specifically designed for signal mixing and detection applications, making it a suitable choice for RF and microwave circuits.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, reducing the risk of signal loss or interference in high frequency applications.

No. of Elements: 2

Having 2 diode elements allows for better signal processing and improved performance, making this product an efficient choice for mixing and detecting signals.

Diode Element Material: SILICON

The use of silicon for the diode element material ensures high reliability, temperature stability, and performance consistency, making this product a durable and dependable choice.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD354LT3 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBD354LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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