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MMBD501

Onsemi

MMBD501 by Onsemi

The Onsemi MMBD501 is a single Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It comes in a small outline rectangular package with gull wing terminals for surface mount assembly. Ideal for microwave mixing and detection circuits requiring high-frequency performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,125 parts In-Stock

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2,125

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Carlin Systems, Inc.

USA . 542 parts In-Stock

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542

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Digiode

USA . 246 parts In-Stock

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246

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Kulean Microsystems

USA . 7,627 parts In-Stock

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7,627

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SupplyDigital Components

Austria . 6,760 parts In-Stock

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TANS Electronics

Latvia . 4,397 parts In-Stock

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Problanco Electronics

Mexico . 2,653 parts In-Stock

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Corphita

USA . 1,508 parts In-Stock

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UHIMA Technologies

Türkiye . 330 parts In-Stock

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Corohmni

South Africa . 302 parts In-Stock

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Overview

Unleash the power of innovation with the MMBD501 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-quality products that deliver exceptional performance. The MMBD501 falls under the category of Microwave Mixer & Detector Diodes, ideal for applications requiring ultra high frequency capabilities. With its compact design and advanced technology, this single-config diode offers unparalleled value and benefits to customers. Say goodbye to limitations and explore endless possibilities with the MMBD501.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable. It also provides good insulation properties, making it suitable for high frequency applications.

Config: SINGLE

The single configuration simplifies the setup and wiring of the diode, making the product easier to use and integrate into electronic circuits.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra high frequency band allows the diode to handle high frequency signals with precision and efficiency, making it ideal for applications requiring fast response times.

Surface Mount: YES

Being surface mountable enables easy and secure mounting of the diode onto a PCB, saving space and offering efficient heat dissipation.

Maximum Diode Capacitance: 1 pF

With a low maximum capacitance of 1 pF, this diode ensures minimal signal loss and distortion, making it suitable for high frequency mixing and detection applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on a PCB and makes it compatible with standard electronic components and manufacturing processes.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit design and enables easy connection with other components, enhancing the versatility of the product.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices where size is a constraint.

Terminal Position: DUAL

The dual terminal position allows for secure and stable connection of the diode, ensuring reliable performance in high frequency applications.

Diode Type: MIXER DIODE

Being a mixer diode, this product is designed for RF and microwave frequency mixing applications, offering high performance and efficient signal processing capabilities.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode provides low forward voltage drop and fast switching speed, making it ideal for high frequency applications requiring precision and efficiency.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering connections and easy assembly onto a PCB, ensuring durability and reliability in operation.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high performance, reliability, and stability, making the product suitable for demanding RF and microwave applications.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD501 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AA

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MMBD501 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-01-250-8517, 5961012508517

NIIN

012508517

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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