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Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84

Microwave Mixer & Detector Diodes

Available Parts 62

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band Maximum Impedance Minimum Impedance JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Minimum Tangential Signal Sensitivity Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Schottky Barrier Type
HSMS-285Y-BLKG by Broadcom

HSMS-285Y-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

L BAND

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

ZERO BARRIER

HSMS-285Y-TR1G by Broadcom

HSMS-285Y-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

L BAND

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

ZERO BARRIER

HSMS-286Y-BLKG by Broadcom

HSMS-286Y-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY TO C BAND

R-PDSO-F2

e3

1

1

2

5.8 GHz

.915 GHz

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

Other Diodes

YES

57 dBm

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

HSMS-286Y-TR1G by Broadcom

HSMS-286Y-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY TO C BAND

R-PDSO-F2

e3

1

1

2

5.8 GHz

.915 GHz

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

Other Diodes

YES

57 dBm

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

MMBD701LT3G by Onsemi

MMBD701LT3G

Onsemi

MMBD701LT3G by Onsemi is a single Schottky mixer diode with ultra high frequency band, suitable for microwave applications. It features a max diode capacitance of 1 pF and can operate at temperatures up to 125 °C. This surface mount diode has a small outline package style and gull wing terminal form, making it ideal for compact electronic designs.

SINGLE

1 pF

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

Other Diodes

YES

SCHOTTKY

TIN

GULL WING

DUAL

30

HSMS-282Y-BLKG by Broadcom

HSMS-282Y-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

HSMS-282Y-TR1G by Broadcom

HSMS-282Y-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

20

1SS381,L3F by Toshiba

1SS381,L3F

Toshiba

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.2 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

FLAT

DUAL

NOT SPECIFIED

BAT1704WE6327HTSA1 by Infineon Technologies

BAT1704WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.15 W

YES

SCHOTTKY

GULL WING

DUAL

NOT SPECIFIED

BAT1705WE6327HTSA1 by Infineon Technologies

BAT1705WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.15 W

YES

SCHOTTKY

GULL WING

DUAL

NOT SPECIFIED

BAT6307WE6327HTSA1 by Infineon Technologies

BAT6307WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH SPEED

CATHODE

SEPARATE, 2 ELEMENTS

.85 pF

SILICON

MIXER DIODE

R-PDSO-G4

2

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

YES

SCHOTTKY

GULL WING

DUAL

LOW BARRIER

BAT6806WE6327HTSA1 by Infineon Technologies

BAT6806WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT1502ELSE6327XTSA1 by Infineon Technologies

BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.

4 V

SINGLE

.23 pF

SILICON

MIXER DIODE

.41 V

X BAND

R-XBCC-N2

e4

1

1

2

150 Cel

-55 Cel

.11 A

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.1 W

5 uA

1 V

YES

SCHOTTKY

GOLD

NO LEAD

BOTTOM

LOW BARRIER

BA278,115 by NXP Semiconductors

BA278,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.2 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.715 W

YES

FLAT

DUAL