Loading...

MMBD701LT3G

Onsemi

MMBD701LT3G by Onsemi

MMBD701LT3G by Onsemi is a single Schottky mixer diode with ultra high frequency band, suitable for microwave applications. It features a max diode capacitance of 1 pF and can operate at temperatures up to 125 °C. This surface mount diode has a small outline package style and gull wing terminal form, making it ideal for compact electronic designs.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

100,000

-

$0.119

$0.099

$0.088

DigiKey

USA . 100,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

100,000

-

-

-

$0.150

Verical

USA . 100,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

100,000

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,932 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,932

$0.093

-

-

-

Vyrian

USA . 5,140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,140

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,981 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

1,981

$0.088

-

-

-

Corohmni

South Africa . 229 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

-

229

$0.098

-

-

-

Component Stockers USA

USA . 148,893 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

148,893

$0.100

$0.090

$0.080

$0.080

AZTECH Wire

Italy . 563 parts In-Stock

1+ parts

$18.110

100+ parts

-

1k+ parts

-

10k+ parts

-

563

$18.110

-

-

-

Kepictronics

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120,000

-

-

-

-

Continental Prestige Electronics

USA . 100,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.103

100,000

-

-

-

$0.103

QUARKTWIN TECHNOLOGY LTD

USA . 15,948 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,948

-

-

-

-

TANS Electronics

Latvia . 7,943 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,943

-

-

-

-

Kulean Microsystems

USA . 4,391 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,391

-

-

-

-

SupplyDigital Components

Austria . 1,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,440

-

-

-

-

Problanco Electronics

Mexico . 383 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

383

-

-

-

-

UHIMA Technologies

Türkiye . 136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

136

-

-

-

-

Overview

Experience the high-quality performance of the MMBD701LT3G by Onsemi, a leading manufacturer in the industry. As a part of the Microwave Mixer & Detector Diodes category, this product offers ultra-high frequency capabilities and a small outline package style for easy integration. With a maximum diode capacitance of 1pF and a Schottky technology design, customers can trust in the reliability and efficiency of this diode. Whether you're working on telecommunications, radar systems, or other high-frequency applications, the MMBD701LT3G provides the value, benefits, and advantages you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, ideal for portable applications.

Configuration: SINGLE

The single configuration simplifies the design and ensures ease of use.

Frequency Band: ULTRA HIGH FREQUENCY

Supports ultra high frequency signals, making it suitable for high-speed data transmission and communication applications.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal loss and accurate signal processing.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on the circuit board.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diode within the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, the diode can withstand high temperatures and operate reliably in various environments.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and corrosion resistance.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in circuit layout and connections.

Maximum Power Dissipation: 0.2 W

The maximum power dissipation of 0.2W ensures the diode can handle high power levels without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds helps prevent thermal damage during the soldering process.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures proper soldering and reliability of the connections.

Diode Type: MIXER DIODE

As a mixer diode, it is designed for frequency mixing applications in RF and microwave circuits.

Technology: SCHOTTKY

Utilizing Schottky technology provides fast switching speeds and low forward voltage drop for efficient signal processing.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy and reliable soldering onto the circuit board.

Diode Element Material: SILICON

Silicon diode element material offers good performance characteristics, reliability, and cost-effectiveness.

Technical Specifications

Microwave Mixer & Detector Diodes MMBD701LT3G attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD701LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20