Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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Selected
DMN53D0U-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn);
HIGH RELIABILITY
SINGLE WITH BUILT-IN DIODE
50 V
.3 A
3 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
AEC-Q101
YES
Matte Tin (Sn)
GULL WING
DUAL
30
SWITCHING
SILICON
STN3PF06
STMicroelectronics
STN3PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 2.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150 °C.
AVALANCHE ENERGY RATED
DRAIN
60 V
2.5 A
.22 ohm
R-PDSO-G4
4
150 Cel
P-CHANNEL
2.5 W
Not Qualified
Other Transistors
NDDP010N25AZ-1H
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Case Connection: DRAIN; Package Shape: RECTANGULAR;
250 V
10 A
.42 ohm
TO-251
R-PSIP-T3
e6
IN-LINE
52 W
FET General Purpose Power
NO
TIN BISMUTH
THROUGH-HOLE
SINGLE
NDDP010N25AZT4H
NDDP010N25AZT4H by Onsemi is a N-CHANNEL FET with 250V DS Breakdown Voltage, 10A Drain Current, and 0.42 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
TO-252
R-PSSO-G2
2
PCP1302-TD-H
PCP1302-TD-H by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, 3A ID, and 0.266 ohm RDS. It's used in enhancement mode applications with a max power dissipation of 3.5W at 150°C, featuring a small outline package style for surface mount assembly.
3 A
.266 ohm
TO-243AA
R-PSSO-F3
3.5 W
FLAT
SFT1452-W
The Onsemi SFT1452-W is a N-CHANNEL FET with 3A max drain current and 26W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, using METAL-OXIDE SEMICONDUCTOR technology.
26 W
Tin/Bismuth (Sn/Bi)
DMP57D5UV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 6 ohm; Terminal Position: DUAL;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.16 A
6 ohm
R-PDSO-F6
6
.4 W
MATTE TIN
NTGS1135PT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
ULTRA LOW RESISTANCE
8 V
4.6 A
.031 ohm
R-PDSO-G6
NOT SPECIFIED
1.6 W
Tin (Sn)
NTUD3171PZT5G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .2 A;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
20 V
.2 A
5 ohm
.2 W
TIN
NTZD3156CT1G
NTZD3156CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 0.54A drain current, 0.55 ohm on-resistance, and 150 °C max temp.
.54 A
.55 ohm
N-CHANNEL AND P-CHANNEL
.28 W
NTZD3156CT2G
NTZD3156CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 0.54A, on-resistance of 0.55 ohm, and operates at up to 150 °C. Suitable for surface mount with 6 terminals in a small outline package.
NTZD3156CT5G
NTZD3156CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications with max drain current of 0.54A and on-resistance of 0.55Ω. This MOSFET has a breakdown voltage of 20V and can handle up to 150 °C operating temperature.
2N7002-E3
Vishay Intertechnology
2N7002-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.2W in enhancement mode operation at temperatures up to 150°C.
.115 A
7.5 ohm
5 pF
DMN26D0UFB4-7
DMN26D0UFB4-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.35W. This chip carrier package features a silicon transistor element and can withstand temperatures up to 150°C.
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
.23 A
.24 A
R-PBCC-N3
e4
CHIP CARRIER
.35 W
NICKEL PALLADIUM GOLD
NO LEAD
BOTTOM
NTJD4001NT2G
NTJD4001NT2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.25A ID, and 2.5 ohm RDS(on). It is used for SWITCHING applications in small outline packages with GULL WING terminals.
30 V
.25 A
2.5 ohm
12 pF
.272 W
STP60NH2LL
STP60NH2LL by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it has 0.0135 ohm On Resistance and operates at up to 150 °C.
LOW THRESHOLD
24 V
40 A
.0135 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
245
60 W
40
BSO200N03
Infineon Technologies
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
AVALANCHE RATED
6.6 A
.02 ohm
56 pF
MS-012
R-PDSO-G8
8
2 W
NTK3142PT5G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Drain-Source On Resistance: 4 ohm; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 30;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.215 A
4 ohm
R-PDSO-F3
NTGD3133PT1G
NTGD3133PT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.5A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a rectangular package and GULL WING terminals for surface mount assembly.
1.6 A
.145 ohm
1.3 W
DMN5L06DMK-7
DMN5L06DMK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, ideal for switching applications. It features separate configuration with built-in diode, small outline package style, and operates in enhancement mode at up to 150°C.
.305 A
DMN5L06DWK-7
DMN5L06DWK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.305A max drain current, suitable for switching applications. It features a separate configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 0.25W and can withstand temperatures up to 150°C.
.25 W
DMN5L06WK-7
DMN5L06WK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.3A drain current, and 3ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, it meets AEC-Q101 standards for automotive use.
HIGH RELIABILITY, FAST SWITCHING
FET General Purpose Powers
DMN2112SN-7
DMN2112SN-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1.2A max drain current, ideal for switching applications. It operates in enhancement mode, with 0.5W max power dissipation and -55 to 150°C operating temperature range. The package style is small outline, making it suitable for surface mount designs.
1.2 A
.1 ohm
45 pF
.5 W
MIL-STD-202
DMN2114SN-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
.16 ohm
NMSD200B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 30;
2 ohm
DEPLETION MODE
DMN5L06K-7
DMN5L06K-7 by Diodes Inc. is a N-channel FET for switching applications. It has a 50V DS breakdown voltage, 0.3A max drain current, and 3 ohm max on-resistance. With a small outline package style, it operates b/w -65 to 150 °C and meets MIL-STD-202 standards.
-65 Cel
LMN200B01-7
LMN200B01-7 by Diodes Inc. is a small signal N-channel FET with built-in bipolar transistor and resistor, used for switching applications. It has a max VCEsat of 0.3V, min DS breakdown voltage of 60V, and max operating temperature of 150°C.
BUILT IN BIAS RESISTOR
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
60
.3 W
.3 V
LMN400B01-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .4 A; JESD-30 Code: R-PDSO-G6;
.4 A
70
NTMS4935NR2G
NTMS4935NR2G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 10A ID, and 0.0051 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating at max temp of 150 °C, it features built-in diode and METAL-OXIDE SEMICONDUCTOR technology.
.0051 ohm
BSS209PWL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; No. of Elements: 1; Package Shape: RECTANGULAR;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.58 A
.52 W
BSV236SPL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .56 W; Qualification: Not Qualified; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED;
1.5 A
.175 ohm
.56 W
BSD223PL6327
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Feedback Capacitance (Crss): 22 pF;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.39 A
1.2 ohm
22 pF
BSS223PWL6327
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Maximum Drain-Source On Resistance: 1.2 ohm;
NTTFS4932NTWG
NTTFS4932NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 79A Drain Current, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, 0.0055 ohm On Resistance, and operates in ENHANCEMENT MODE. This MOSFET has a max power dissipation of 43W and can withstand temperatures up to 150 °C.
79 A
11 A
.0055 ohm
S-XDSO-N5
5
UNSPECIFIED
SQUARE
43 W
NTTFS4937NTAG
NTTFS4937NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A ID, and 0.007 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package with NO LEAD terminals features a BUILT-IN DIODE and DUAL terminal position.
75 A
.007 ohm
43.1 W
Matte Tin (Sn) - annealed
NTTFS4937NTWG
NTTFS4937NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.007 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SQUARE package features a BUILT-IN DIODE and NO LEAD terminals for surface mount assembly.
NTTFS4939NTWG
NTTFS4939NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 52A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 29.8W. This surface mount transistor has a SQUARE package shape and operates at up to 150 °C temperature.
52 A
8.9 A
.008 ohm
29.8 W
NTTFS4943NTWG
NTTFS4943NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 8A ID, and 0.011 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor features METAL-OXIDE SEMICONDUCTOR tech and SILICON material.
8 A
.011 ohm
NTTFS4945NTWG
NTTFS4945NTWG by Onsemi is a N-CHANNEL FET with built-in diode for switching applications. It features a 30V DS breakdown voltage, 7.1A max drain current, and 0.013 ohm max on resistance. This MOSFET has a square package shape, no lead terminals, and operates in enhancement mode.
7.1 A
.013 ohm
SSM3K121TU
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
3.2 A
.14 ohm
.8 W
2N4392-E3
2N4392-E3 by Vishay Intertechnology is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 1.8W and drain-source on resistance of 60 ohm. Ideal for SWITCHING applications due to its low feedback capacitance of 3.5pF and temperature range from -55°C to 200°C.
LOW INSERTION LOSS
GATE
60 ohm
JUNCTION
3.5 pF
TO-206AA
O-MBCY-W3
200 Cel
METAL
ROUND
CYLINDRICAL
1.8 W
WIRE
NTUD3127CT5G
NTUD3127CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode/resistor. Ideal for switching applications, it has 20V DS breakdown voltage, 0.16A max drain current, and 3 ohm max on-resistance. Operating at up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a small outline package.
2.2 pF
NICKEL GOLD PALLADIUM
NTUD3128NT5G
NTUD3128NT5G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.16A, and Max Power Dissipation of 0.2W. This small outline transistor operates in enhancement mode at temperatures up to 150 °C.
NTHD4102PT3G
NTHD4102PT3G by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max ID of 2.9A, and RDS(on) of 0.08 ohm. This small outline transistor operates in enhancement mode with a peak reflow temperature of 260 °C.
LOGIC LEVEL COMPATIBLE
2.9 A
.08 ohm
R-XDSO-C8
C BEND
NTJD4158CT2G
NTJD4158CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It's used for switching applications in enhancement mode. Features include 30V breakdown voltage, 0.27W power dissipation, and -55 to 150 °C operating temperature range.
.27 W
DMN32D2LV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N5457_D74Z
Fairchild Semiconductor
2N5457_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.31W and a max operating temperature of 150°C. Ideal for SWITCHING applications due to its low feedback capacitance of 3pF.
3 pF
TO-92
O-PBCY-T3
.31 W
FDC6000NZ_F077
Fairchild Semiconductor's FDC6000NZ_F077 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.3A ID, and 0.02 ohm RDS(on). Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, ENHANCEMENT MODE operation, and dual elements with built-in diode.
7.3 A
Nickel/Palladium/Gold (Ni/Pd/Au)
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