Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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DMC2710UV-13
Diodes Incorporated
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (ID): 1.1 A; Terminal Position: DUAL;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
1.1 A
.4 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F6
e3
1
2
6
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL AND P-CHANNEL
.8 W
YES
MATTE TIN
FLAT
DUAL
30
SWITCHING
SILICON
DMP1070UCA3-7A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XBCC-N3;
ESD PROTECTED
DRAIN
SINGLE WITH BUILT-IN DIODE
12 V
3.6 A
.15 ohm
R-XBCC-N3
3
UNSPECIFIED
CHIP CARRIER
NOT SPECIFIED
P-CHANNEL
1.36 W
NICKEL PALLADIUM GOLD/NICKEL GOLD
NO LEAD
BOTTOM
PCF8051LW
Onsemi
PCF8051LW by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE with 10A ID and 0.018 ohm RDS(on), suitable for high power dissipation up to 2.4W at temperatures ranging from -55 to 150 °C.
40 V
10 A
.018 ohm
25 pF
R-XUUC-N3
UNCASED CHIP
N-CHANNEL
2.4 W
UPPER
BSS138WG
Changzhou Galaxy Century Microelectronics
BSS138WG by Changzhou Galaxy Century Microelectronics is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for SWITCHING applications. It features SINGLE configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With 0.2W power dissipation and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic circuits.
50 V
.2 A
3.5 ohm
3.5 pF
R-PDSO-G3
.2 W
GULL WING
TP5335K1-G-VAO
Microchip Technology
Microchip TP5335K1-G-VAO is a P-CHANNEL FET with 350V DS Breakdown Voltage, 0.36W Power Dissipation, and 70 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its ENHANCEMENT MODE operation and small outline package.
350 V
.085 A
70 ohm
2 pF
TO-236AB
.36 W
AEC-Q101
Matte Tin (Sn)
DMN65D7LFR4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Package Shape: SQUARE; No. of Elements: 1;
60 V
.26 A
5 ohm
2.7 pF
S-PDSO-N4
e4
4
SQUARE
.7 W
NICKEL PALLADIUM GOLD
BSS123K-13
BSS123K-13 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.5W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
100 V
.23 A
6 ohm
.5 W
DMT4031LSD-13
DMT4031LSD-13 by Diodes Inc. is a N-channel FET with 40V DS breakdown voltage, 36A IDM, and 0.023 ohm RDS(on). Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology. Operating from -55 to 150 °C, this MOSFET offers high power dissipation of 1.5W and peak reflow temp of 260C.
7.6 mJ
6.3 A
.023 ohm
20 pF
R-PDSO-G8
8
1.5 W
36 A
MIL-STD-202
DMN2710UT-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; Minimum Operating Temperature: -55 Cel; Transistor Application: SWITCHING;
.87 A
.45 ohm
6.5 pF
.52 W
DMP2110UW-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .00065 W; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;
2 A
.1 ohm
47 pF
.00065 W
DMN2310U-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .68 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
1.6 A
.175 ohm
6 pF
.68 W
DMN3060LWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .64 W; Terminal Form: GULL WING; Peak Reflow Temperature (C): 260;
30 V
2.6 A
.06 ohm
26 pF
.64 W
AEC-Q101; IATF 16949
DMN3061SW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
2.7 A
29 pF
.65 W
DMP2065U-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
4 A
77 pF
DMN65D8LT-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;
.21 A
1.8 pF
DMN65D9L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .67 W; Maximum Drain Current (ID): .335 A; Maximum Drain-Source On Resistance: 4 ohm;
.335 A
4 ohm
2.6 pF
.67 W
TPCC8093,L1Q
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
21 A
.0095 ohm
140 pF
S-PDSO-F8
30 W
DMN3060LW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .64 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
DMN2055UWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
3.1 A
.046 ohm
37 pF
DMN2710UW-13
DMN2710UW-13 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage, 0.9A max drain current, and 0.45 ohm max on-resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. This small outline package features a built-in diode and matte tin terminal finish.
.9 A
.6 W
DMN2310UW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Minimum DS Breakdown Voltage: 20 V; Peak Reflow Temperature (C): 260;
1.3 A
.2 ohm
.55 W
DMN2710UTQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
JFE150DCKT
Texas Instruments
JFE150DCKT by Texas Instruments is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max temp of 125°C and min of -40°C. With 5 terminals and built-in diode, it's surface mountable with PLASTIC/EPOXY body.
JUNCTION
7 pF
R-PDSO-G5
5
DEPLETION MODE
125 Cel
-40 Cel
AMPLIFIER
DMN2451UFB4Q-7B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-30 Code: R-PBCC-N3; Transistor Element Material: SILICON;
3.7 pF
R-PBCC-N3
1.1 W
BSS138WQ-13-F
BSS138WQ-13-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W max power dissipation and -55 to 150°C operating temp range, it's suitable for small outline SMT designs.
8 pF
AEC-Q101; UL RECOGNIZED
ALD810025SCL
Advanced Linear Devices
ALD810025SCL by Advanced Linear Devices is a N-CHANNEL FET with 4 elements and built-in diode. Operating in depletion mode, it has a max drain current of 0.08A and min DS breakdown voltage of 10.6V. Ideal for small outline applications requiring low power dissipation at temperatures ranging from 0 to 70°C.
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
10.6 V
.08 A
R-PDSO-G16
16
70 Cel
0 Cel
DMP31D7LFBQ-7B
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .89 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 3 pF;
.81 A
.9 ohm
3 pF
.89 W
BSS123IXTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
.19 A
1.6 pF
DMN31D5UFZQ-7B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 1.8 pF;
.41 A
1.5 ohm
.4 W
DMC31D5UDAQ-7B
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .37 W; No. of Terminals: 6; Terminal Position: BOTTOM;
.4 A
R-PBCC-N6
.37 W
AEC-Q101; IATF 16949; MIL-STD-202
DMN62D0UV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .74 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;
.49 A
2 ohm
2.4 pF
.74 W
BSS84WT106
ROHM
ROHM BSS84WT106 is a P-CHANNEL FET with 60V DS breakdown voltage and 0.21A ID. Ideal for switching applications, it features a built-in diode, 6.4 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs with GULL WING terminals, it has a max power dissipation of 0.3W and can withstand temperatures from -55 to 150°C.
6.4 ohm
.3 W
DMP2042UCP4-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .86 W; JESD-609 Code: e2; No. of Terminals: 4;
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.9 A
.065 ohm
11 pF
S-XBCC-N4
e2
.86 W
TIN SILVER
DMN1032UCP4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.01 W; Maximum Drain-Source On Resistance: .042 ohm; Maximum Pulsed Drain Current (IDM): 15 A;
4.8 A
.042 ohm
31 pF
1.01 W
15 A
DMN2046UVT-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .94 W; Reference Standard: MIL-STD-202; No. of Terminals: 6;
.09 ohm
27 pF
R-PDSO-G6
.94 W
DMP31D1UQ-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .58 W; Maximum Feedback Capacitance (Crss): 5.8 pF; Package Body Material: PLASTIC/EPOXY;
.62 A
1 ohm
5.8 pF
.58 W
DMP31D1UQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .58 W; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
JFE150DBVT
JFE150DBVT by Texas Instruments is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for amplifier applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in DEPLETION MODE, this transistor has a max temperature of 125°C and feedback capacitance of 7pF.
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