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TP5335K1-G-VAO

Microchip Technology

TP5335K1-G-VAO by Microchip Technology

Microchip TP5335K1-G-VAO is a P-CHANNEL FET with 350V DS Breakdown Voltage, 0.36W Power Dissipation, and 70 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its ENHANCEMENT MODE operation and small outline package.

Median Price

$0.694

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$0.694

100+ parts

$0.694

1k+ parts

$0.694

10k+ parts

-

200

$0.694

$0.694

$0.694

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.680

100+ parts

-

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450

$0.680

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Vyrian

USA . 2,335 parts In-Stock

1+ parts

-

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2,335

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Cyclops Electronics Ltd

UK . 177 parts In-Stock

1+ parts

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177

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,260 parts In-Stock

1+ parts

$0.590

100+ parts

-

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1,260

$0.590

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-

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Corohmni

South Africa . 508 parts In-Stock

1+ parts

$0.605

100+ parts

-

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508

$0.605

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-

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Argo Parts USA

USA . 3,696 parts In-Stock

1+ parts

$0.680

100+ parts

-

1k+ parts

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10k+ parts

$0.660

3,696

$0.680

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-

$0.660

Continental Prestige Electronics

USA . 1,649 parts In-Stock

1+ parts

$0.680

100+ parts

-

1k+ parts

-

10k+ parts

$0.666

1,649

$0.680

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-

$0.666

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.680

100+ parts

-

1k+ parts

$0.646

10k+ parts

$0.632

1,000

$0.680

-

$0.646

$0.632

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.694

100+ parts

$0.694

1k+ parts

$0.694

10k+ parts

-

200

$0.694

$0.694

$0.694

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Aztec Data Supply Inc.

USA . 2,123 parts In-Stock

1+ parts

$1.192

100+ parts

-

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2,123

$1.192

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Semicontronic

India . 1,351 parts In-Stock

1+ parts

$1.280

100+ parts

$1.248

1k+ parts

$1.242

10k+ parts

-

1,351

$1.280

$1.248

$1.242

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AZTECH Wire

Italy . 168 parts In-Stock

1+ parts

$16.610

100+ parts

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168

$16.610

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QualityLine Systems

Poland . 8,253 parts In-Stock

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8,253

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Marpe Global Electronics

Taiwan . 5,813 parts In-Stock

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5,813

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Microchip USA

USA . 4,055 parts In-Stock

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4,055

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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XL Components Corporation

Australia . 2,121 parts In-Stock

1+ parts

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2,121

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Robosynatics

Brazil . 300 parts In-Stock

1+ parts

-

100+ parts

$2.186

1k+ parts

$2.186

10k+ parts

$2.186

300

-

$2.186

$2.186

$2.186

Lucentia Tech

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$2.186

1k+ parts

$2.186

10k+ parts

$2.186

300

-

$2.186

$2.186

$2.186

Overview

Experience the power of superior quality and reliability with the TP5335K1-G-VAO by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology brings you cutting-edge technology in the form of Small Signal Field Effect Transistors. Perfect for switching applications, this P-Channel transistor offers enhanced performance and efficiency. With a high breakdown voltage of 350V and built-in diode, the TP5335K1-G-VAO ensures optimal functionality and durability. Trust Microchip Technology to deliver innovative solutions that exceed expectations. Elevate your projects with the TP5335K1-G-VAO today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Durable material for long-lasting performance.

Polarity or Channel Type:

P-CHANNEL - Provides efficient channel operation.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space.

Transistor Application:

SWITCHING - Ideal for fast switching applications.

Surface Mount:

YES - Easy to install and suitable for compact designs.

Minimum DS Breakdown Voltage:

350 V - Offers high voltage tolerance for robust performance.

Package Shape:

RECTANGULAR - Easy to handle and mount.

Terminal Form:

GULL WING - Facilitates easy soldering and connection.

Operating Mode:

ENHANCEMENT MODE - Enhances overall transistor performance.

No. of Terminals:

3 - Simple and straightforward connectivity.

Maximum Power Dissipation (Abs):

0.36 W - Ensures efficient power handling.

Package Style (Meter):

SMALL OUTLINE - Space-saving design for versatile applications.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Enables high-speed switching capabilities.

Maximum Operating Temperature:

150 °C - Can withstand high temperatures for reliable operation.

Transistor Element Material:

SILICON - Ensures stable and consistent performance.

Minimum Operating Temperature:

55 °C - Suitable for a wide range of operating environments.

Terminal Finish:

Matte Tin (Sn) - Provides a strong and reliable terminal connection.

Maximum Drain Current (ID):

0.085 A - Handles high current levels for efficient operation.

Maximum Drain-Source On Resistance:

70 ohm - Offers low resistance for minimal power loss.

Terminal Position:

DUAL - Provides flexibility in circuit configurations.

Maximum Feedback Capacitance (Crss):

2 pF - Minimizes signal interference for clean output.

Reference Standard:

AEC-Q101 - Meets industry standards for quality and reliability.

Technical Specifications

Small Signal Field Effect Transistors (FET) TP5335K1-G-VAO attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Minimum DS Breakdown Voltage:

350 V

Maximum Drain Current (ID):

.085 A

Maximum Drain-Source On Resistance:

70 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TP5335K1-G-VAO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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