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TP5322K1-G

Microchip Technology

TP5322K1-G by Microchip Technology

TP5322K1-G by Microchip is a P-CHANNEL FET for SWITCHING applications. It features a 220V DS Breakdown Voltage, 0.36W Power Dissipation, and -55 to 150 °C Operating Temperature range. With GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology, it's ideal for compact electronic designs requiring efficient power management.

Median Price

$0.642

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,120 parts In-Stock

1+ parts

$0.529

100+ parts

$0.445

1k+ parts

$0.437

10k+ parts

-

1,120

$0.529

$0.445

$0.437

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Mouser Electronics

USA . 50,419 parts In-Stock

1+ parts

$0.750

100+ parts

$0.560

1k+ parts

-

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50,419

$0.750

$0.560

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Microchip Technology

USA . 3,045 parts In-Stock

1+ parts

$0.750

100+ parts

$0.560

1k+ parts

$0.480

10k+ parts

$0.430

3,045

$0.750

$0.560

$0.480

$0.430

DigiKey

USA . 1,270 parts In-Stock

1+ parts

$0.750

100+ parts

$0.560

1k+ parts

-

10k+ parts

$0.560

1,270

$0.750

$0.560

-

$0.560

Master Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.546

10k+ parts

$0.538

3,000

-

-

$0.546

$0.538

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.642

10k+ parts

$0.640

3,000

-

-

$0.642

$0.640

Chip1Stop

Japan . 1,248 parts In-Stock

1+ parts

-

100+ parts

$0.458

1k+ parts

$0.414

10k+ parts

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1,248

-

$0.458

$0.414

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 15,000 parts In-Stock

1+ parts

$0.420

100+ parts

$0.380

1k+ parts

$0.340

10k+ parts

-

15,000

$0.420

$0.380

$0.340

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.545

100+ parts

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700

$0.545

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TME

Poland . 86 parts In-Stock

1+ parts

$0.820

100+ parts

$0.500

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86

$0.820

$0.500

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Vyrian

USA . 15,641 parts In-Stock

1+ parts

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15,641

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Electro Sonic

Canada . 9,000 parts In-Stock

1+ parts

-

100+ parts

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$0.342

9,000

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-

-

$0.342

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.766

10k+ parts

$0.755

3,000

-

-

$0.766

$0.755

NexGen Digital

USA . 590 parts In-Stock

1+ parts

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590

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Distributors (Availability)

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Semicontronic

India . 15,927 parts In-Stock

1+ parts

$0.280

100+ parts

$0.273

1k+ parts

$0.272

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15,927

$0.280

$0.273

$0.272

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Ampacity Inc.

Singapore . 15,697 parts In-Stock

1+ parts

$0.280

100+ parts

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15,697

$0.280

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.535

100+ parts

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1k+ parts

$0.513

10k+ parts

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2,000

$0.535

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$0.513

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Continental Prestige Electronics

USA . 4,098 parts In-Stock

1+ parts

$0.545

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$0.535

4,098

$0.545

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$0.535

Argo Parts USA

USA . 3,631 parts In-Stock

1+ parts

$0.545

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$0.529

3,631

$0.545

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$0.529

Aztec Data Supply Inc.

USA . 280 parts In-Stock

1+ parts

$0.930

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280

$0.930

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Corohmni

South Africa . 146 parts In-Stock

1+ parts

$1.389

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146

$1.389

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,613 parts In-Stock

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Perfect Parts

USA . 10,080 parts In-Stock

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West Coast Incorporated

USA . 1,009 parts In-Stock

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1,009

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Overview

Boost your electronics projects with the TP5322K1-G from Microchip Technology. Crafted with precision and expertise, this P-Channel Field Effect Transistor offers reliable performance in switching applications. With a minimum DS Breakdown Voltage of 220V and a maximum Drain Current of 0.12A, this small outline package with gull wing terminals ensures efficient power dissipation and enhanced mode operation. Trust Microchip Technology for quality components that deliver exceptional value and benefits to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are preferred, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, saving space and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable control of electrical currents.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time during assembly.

Minimum DS Breakdown Voltage: 220 V

Withstands high voltages, making it suitable for use in applications requiring robust voltage handling capabilities.

Terminal Form: GULL WING

Facilitates secure soldering connections for reliable electrical contact.

Operating Mode: ENHANCEMENT MODE

Enables easy control of the transistor's conduction, enhancing efficiency in switching operations.

No. of Terminals: 3

Simplifies wiring connections and circuit layout, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 0.36 W

Allows for efficient power handling without the risk of overheating, ensuring stable performance.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on circuit boards, ideal for applications with limited space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced semiconductor technology for high performance and reliability in circuit applications.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

Ensures reliable performance even in low-temperature conditions, making it suitable for diverse operating environments.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish for long-term reliability in electrical connections.

Maximum Drain Current (ID): 0.12 A

Capable of handling high currents, making it suitable for applications requiring robust current handling capabilities.

Maximum Drain-Source On Resistance: 12 ohm

Low on-resistance ensures efficient conduction and minimal power loss in switching applications.

Terminal Position: DUAL

Offers flexibility in circuit layout and wiring connections, enabling versatile integration into different circuit designs.

Maximum Time At Peak Reflow Temperature (s): 40

Withstands peak reflow temperatures for specified durations, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes, ensuring secure connections on circuit boards.

Maximum Feedback Capacitance (Crss): 20 pF

Low feedback capacitance minimizes signal distortion and enhances performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TP5322K1-G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

220 V

Maximum Drain Current (ID):

.12 A

Maximum Drain-Source On Resistance:

12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.36 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TP5322K1-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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