Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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FDS8449-F085
Onsemi
FDS8449-F085 by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage and 7.6A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures up to 150°C.
SINGLE WITH BUILT-IN DIODE
40 V
7.6 A
.029 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e4
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
2.5 W
Not Qualified
FET General Purpose Power
YES
NICKEL PALLADIUM GOLD SILVER
GULL WING
DUAL
30
SWITCHING
SILICON
FDG6301N-F085
FDG6301N-F085 by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.22A, operating at an enhancement mode with a breakdown voltage of 25V. With a small outline package style and peak reflow temperature of 260°C, it offers efficient performance in various electronic devices.
LOGIC LEVEL COMPATIBLE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
25 V
.22 A
4 ohm
R-PDSO-G6
e3
2
6
.3 W
MATTE TIN
FDS9431A-F085
FDS9431A-F085 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3.5A Drain Current, and 0.13 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This RECTANGULAR package features GULL WING terminals and is suitable for surface mount installations.
20 V
3.5 A
.13 ohm
P-CHANNEL
Other Transistors
FDS4435BZ-F085
FDS4435BZ-F085 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current, ideal for SWITCHING applications. It features a RECTANGULAR package shape, GULL WING terminals, and operates in ENHANCEMENT MODE at up to 150°C. With 0.02 ohm On Resistance and 345pF Feedback Capacitance, it offers efficient performance in various electronic circuits.
30 V
8.8 A
.02 ohm
345 pF
DMN1014UFDF-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Feedback Capacitance (Crss): 121 pF; Transistor Element Material: SILICON;
12 V
8 A
.016 ohm
121 pF
S-PDSO-N6
-55 Cel
SQUARE
1.7 W
NICKEL PALLADIUM GOLD
NO LEAD
DMP2900UV-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .85 A; Maximum Feedback Capacitance (Crss): 3.4 pF; Terminal Position: DUAL;
LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
.85 A
.75 ohm
3.4 pF
R-PDSO-F6
.8 W
FLAT
DMN3061SVT-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
3.4 A
.06 ohm
29 pF
1.08 W
DMT35M4LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: NICKEL PALLADIUM GOLD; Transistor Element Material: SILICON;
DRAIN
13 A
.0069 ohm
2N7002L6327HTSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
AVALANCHE RATED
60 V
.3 A
3 ohm
3 pF
R-PDSO-G3
3
BSS126L6327HTSA1
Infineon's BSS126L6327HTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A ID, and 500 ohm RDS(on). Ideal for small outline applications requiring a single configuration with built-in diode. Suitable for automotive use due to AEC-Q101 standard compliance.
600 V
.021 A
500 ohm
1.5 pF
AEC-Q101
BSS131L6327HTSA1
Infineon's BSS131L6327HTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage. Operating in Enhancement Mode, it has 0.11A ID and 14 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and -55 to 150 °C operating range.
240 V
.11 A
14 ohm
4.2 pF
.36 W
BSS139L6327HTSA1
Infineon's BSS139L6327HTSA1 is a N-CHANNEL FET with 250V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it features 0.1A ID and 30 ohm RDS(on). Widely used in automotive applications due to AEC-Q101 standard compliance.
250 V
.1 A
30 ohm
3.3 pF
DEPLETION MODE
BSS159NL6327HTSA1
Infineon's BSS159NL6327HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 3.5Ω RDS(ON). Ideal for small outline applications in automotive electronics due to AEC-Q101 standard compliance and low feedback capacitance of 5pF.
.23 A
3.5 ohm
5 pF
BSS169L6327HTSA1
Infineon BSS169L6327HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6Ω RDS(on). Ideal for depletion mode operation in small outline packages. Suitable for applications requiring low feedback capacitance and built-in diode configuration.
100 V
.17 A
6 ohm
7 pF
BSS192PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;
.19 A
12 ohm
8 pF
R-PSSO-F3
1 W
SINGLE
BSS205NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .05 ohm; Package Body Material: PLASTIC/EPOXY;
2.5 A
.05 ohm
24 pF
BSS214NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
1.5 A
.14 ohm
BSS215PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .15 ohm; Operating Mode: ENHANCEMENT MODE;
.15 ohm
128 pF
BSS225L6327HTSA1
Infineon's BSS225L6327HTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.09A ID, and 45 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include single configuration with built-in diode in a small outline package.
.09 A
45 ohm
4.4 pF
BSS306NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 17 pF; Package Shape: RECTANGULAR;
2.3 A
.057 ohm
17 pF
BSS308PEL6327HTSA1
Infineon BSS308PEL6327HTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 2A ID, and 0.08 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include SINGLE configuration with built-in diode, GULL WING terminals, and ENHANCEMENT MODE operation.
2 A
.08 ohm
18 pF
BSS315PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 84 pF; No. of Elements: 1; Terminal Position: DUAL;
84 pF
BSS7728NL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.2 A
5 ohm
BSS83PL6327HTSA1
Infineon's BSS83PL6327HTSA1 is a P-CHANNEL FET with 60V DS breakdown voltage, 0.33A ID, and 2 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include single configuration with built-in diode and GULL WING terminals.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.33 A
2 ohm
9 pF
NOT SPECIFIED
MCH6660-TL-W
MCH6660-TL-W by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max ID of 2A, RDS(on) of 0.136Ω, and V(BR)DSS of 20V. Operating in enhancement mode at up to 150°C, this MOSFET is surface mountable with a small outline package style.
.136 ohm
e6
N-CHANNEL AND P-CHANNEL
TIN BISMUTH
MCH3486-TL-W
MCH3486-TL-W by Onsemi is a N-CHANNEL FET with 2A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-performance transistors.
TT8J3TR
ROHM
ROHM TT8J3TR is a P-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for SWITCHING applications, it has a max ID of 2.5A and 0.084Ω RDS(on). This SMALL OUTLINE transistor operates in ENHANCEMENT MODE with METAL-OXIDE SEMICONDUCTOR technology.
.084 ohm
R-PDSO-F8
10
MCH3484-TL-W
MCH3484-TL-W by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 4.5A ID, and 0.04 ohm RDS(on). Ideal for small signal applications in electronics due to its 1W power dissipation, ENHANCEMENT MODE operation, and SILICON transistor element material.
4.5 A
.04 ohm
R-PDSO-F3
MCH6662-TL-W
MCH6662-TL-W by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode. It has a max drain current of 2A, on resistance of 0.16 ohm, and operates in enhancement mode. Ideal for small outline applications requiring high power dissipation up to 0.8W at 150 °C.
.16 ohm
DMN13H750S-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.26 W; Reference Standard: AEC-Q101; Additional Features: HIGH RELIABILITY;
HIGH RELIABILITY
130 V
1 A
11 pF
1.26 W
DMN24H3D5L-13
DMN24H3D5L-13 by Diodes Inc. is a N-channel FET with 240V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode at temperatures ranging from -55°C to 150°C. This small outline transistor has a max drain current of 0.48A and a drain-source resistance of 3.5 ohm, making it suitable for surface mount designs.
.48 A
DMP25H18DLFDE-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e4; Operating Mode: ENHANCEMENT MODE;
LOW THRESHOLD
.26 A
4 pF
S-PDSO-N3
1.4 W
BSP171PE6327
Infineon's BSP171PE6327 is a P-CHANNEL FET with 60V DS breakdown voltage and 1.9A max drain current. Ideal for automotive applications due to AEC-Q101 standard, it features a built-in diode, 0.3 ohm RDS(on), and 55pF Crss capacitance.
1.9 A
.3 ohm
55 pF
R-PDSO-G4
4
40
BSO080P03SNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
12.6 A
.008 ohm
1500 pF
BSO130N03MSGXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY;
7.8 A
.013 ohm
BSO200P03SNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; No. of Elements: 1;
7.4 A
580 pF
BSO220N03MSGXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Drain-Source On Resistance: .022 ohm; JESD-30 Code: R-PDSO-G8;
6.1 A
.022 ohm
BSS127L6327HTSA1
Infineon's BSS127L6327HTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a built-in diode, 0.021A ID, and 600 ohm RDS(on). The transistor's GULL WING terminals and small outline package make it suitable for surface mount designs.
600 ohm
BSS138NL6327HTSA1
Infineon's BSS138NL6327HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With 3.5 ohm Drain-Source On Resistance and 3.8 pF Feedback Capacitance, it meets AEC-Q101 standards for automotive use at temperatures ranging from -55 to 150 °C.
3.8 pF
BSS192PH6327XTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel;
BSS225H6327XTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 600 V; Peak Reflow Temperature (C): NOT SPECIFIED;
BSS87H6327XTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-F3; Terminal Finish: TIN; JESD-609 Code: e3;
.29 A
7.3 pF
TIN
TSM2301CXRFG
Taiwan Semiconductor
TSM2301CXRFG by Taiwan Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 2.8A ID, operating in ENHANCEMENT MODE. This SMALL OUTLINE transistor has 0.13 ohm RDS(on) and GULL WING terminals for surface mount assembly.
ULTRA LOW RESISTANCE
2.8 A
DMC1028UFDB-13
DMC1028UFDB-13 by Diodes Inc. is a Small Signal FET with N/P-channel types, 2 elements with built-in diode, and 12V DS breakdown voltage. Ideal for switching applications, it features a max ID of 6A, 0.025Ω RDS(on), and operates in enhancement mode.
6 A
.025 ohm
DMC1029UFDB-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
5.6 A
119 pF
2.2 W
DMN2041UFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .04 ohm; Case Connection: DRAIN;
4.7 A
DMN3035LWN-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 5.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
5.5 A
.035 ohm
R-PDSO-N6
DMP2021UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Additional Features: HIGH RELIABILITY; Terminal Form: NO LEAD;
9 A
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