Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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BSO052N03S
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
SINGLE WITH BUILT-IN DIODE
30 V
14 A
.0052 ohm
METAL-OXIDE SEMICONDUCTOR
280 pF
MS-012AA
R-PDSO-G8
e3
3
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
2.5 W
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
DUAL
SWITCHING
SILICON
BSO104N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Maximum Drain Current (ID): 10 A; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
10 A
.0097 ohm
110 pF
1.56 W
BSO350N03
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain-Source On Resistance: .035 ohm; JESD-30 Code: R-PDSO-G8;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
5 A
.035 ohm
28 pF
2
1.4 W
BS170G
Onsemi
BS170G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 0.35W and can withstand temperatures up to 150°C.
60 V
.5 A
5 ohm
TO-226AA
O-PBCY-T3
e1
ROUND
CYLINDRICAL
.35 W
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
40
MMBF170LT3G
MMBF170LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY package features GULL WING terminals and a built-in DIODE.
TO-236AB
R-PDSO-G3
-55 Cel
.225 W
FET General Purpose Powers
Tin (Sn)
NTJD4105CT2
NTJD4105CT2 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 1.1A, on-resistance of 0.375 ohm & operates at up to 150°C. With a package style of small outline & Gull Wing terminals, it's designed for surface mount technology.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
20 V
1.1 A
.63 A
.375 ohm
5 pF
R-PDSO-G6
e0
6
235
N-CHANNEL AND P-CHANNEL
.55 W
Other Transistors
TIN LEAD
NTJD4105CT4G
NTJD4105CT4G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 1.1A max drain current, 0.375 ohm RDS(on), and 150°C max temp making it ideal for various electronic circuits.
TIN
2N7000RLRAG
2N7000RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in Enhancement Mode applications, featuring a built-in diode and 5ohm Drain-Source Resistance for efficient performance.
.2 A
TO-92
2N7000RLRMG
2N7000RLRMG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for applications requiring Enhancement Mode operation, it features a built-in diode and 5ohm On Resistance. Package style is cylindrical with through-hole terminals, suitable for various electronic circuits.
2N7000RLRPG
2N7000RLRPG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. It is used in applications requiring Enhancement Mode operation, such as low-power switching circuits. With a max power dissipation of 0.35W and operating temperature up to 150 °C, it offers reliable performance in various electronic designs.
NTMS4404NR2
NTMS4404NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 9.6A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.0115 ohm. This small outline transistor can handle up to 2.5W power dissipation at 150 °C max temperature.
9.6 A
7 A
.0115 ohm
300 pF
TN0200K-T1-E3
Vishay Intertechnology
Vishay Intertechnology TN0200K-T1-E3 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.73A Drain Current, and 0.5 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with Matte Tin finish.
LOGIC LEVEL COMPATIBLE
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.73 A
.5 ohm
TO-236
Matte Tin (Sn)
30
NTJD2152PT2G
NTJD2152PT2G by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It is used for switching applications in enhancement mode. With a max drain current of 1.1A and breakdown voltage of 8V, it operates at up to 150 °C.
8 V
.775 A
.3 ohm
40 pF
P-CHANNEL
NTR4502PT1
NTR4502PT1 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has GULL WING terminals and can withstand up to 150°C operating temperature.
1.95 A
.2 ohm
.4 W
Tin/Lead (Sn80Pb20)
NTR4502PT3
NTR4502PT3 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 1.95A max drain current, and 0.2 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. This small outline transistor has a peak reflow temp of 235 °C and is surface mountable.
NTR4503NT1
NTR4503NT1 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.5A Drain Current, 0.11 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.
1.5 A
.11 ohm
25 pF
.73 W
NUD3048MT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; No. of Elements: 1; Terminal Position: DUAL;
100 V
1.2 A
.82 ohm
Tin/Lead (Sn/Pb)
DMB53D0UDW-7
Diodes Incorporated
DMB53D0UDW-7 by Diodes Inc. is a N-channel FET with VCEsat of 0.3V, DS Breakdown Voltage of 50V, and Drain-Source On Resistance of 4Ω. Ideal for switching applications, it features a built-in bipolar transistor and diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET has a max collector current of 0.1A and DC current gain of 200 hFE.
HIGH RELIABILITY
.1 A
SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
200
50 V
.16 A
4 ohm
.25 W
.3 V
DMB53D0UV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;
R-PDSO-F6
FLAT
DMB54D0UDW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum VCEsat: .4 V;
ESD PROTECTION, LOW THRESHOLD
220
.4 V
SI3457BDV-T1-E3
Vishay Intertechnology's SI3457BDV-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 3.7A Drain Current, and 0.054 ohm On Resistance. Ideal for applications requiring high power dissipation up to 2W in small outline packages, such as portable electronics and power management systems.
3.7 A
.054 ohm
2 W
SI3993DV-T1-E3
SI3993DV-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 1.8A Drain Current, and 0.133 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
1.8 A
.133 ohm
1.15 W
2N7002V-7
2N7002V-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.28A drain current, and 13.5 ohm on-resistance. Ideal for switching applications due to its small outline package and enhancement mode operation. Suitable for surface mount designs with dual terminals and built-in diode elements.
.28 A
13.5 ohm
.15 W
SI4884BDY-T1-GE3
SI4884BDY-T1-GE3 by Vishay Intertechnology is a small signal N-channel FET with a min DS breakdown voltage of 30V and max drain current of 16.5A. It is commonly used in applications requiring high power dissipation and operates at temperatures up to 150°C.
16.5 A
12.4 A
.009 ohm
4.45 W
NTJD4152PT1
NTJD4152PT1 by Onsemi is a P-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.88A max drain current, and 0.26 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150 °C.
.88 A
.26 ohm
NTJD4401NT2G
NTJD4401NT2G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. Features include 0.63A max drain current, 0.375 ohm max on resistance, and 20V min breakdown voltage. Ideal for small outline packages requiring high power dissipation up to 0.55W at 150 °C.
NTJD4401NT4G
NTJD4401NT4G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor for SWITCHING applications. It has a max drain current of 0.63A, on-resistance of 0.375 ohm, and breakdown voltage of 20V. This small outline transistor operates in enhancement mode at up to 150 °C.
NTJD4401NT4
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
NTJS4405NT1
NTJS4405NT1 by Onsemi is a N-CHANNEL FET with 25V DS breakdown voltage, 0.35 ohm max RDS(on), and 1A max ID. Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals. Operating in enhancement mode, it has 12pF Crss and withstands peak reflow temp of 235 °C.
25 V
1 A
.35 ohm
12 pF
NTJS4405NT4G
NTJS4405NT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE and 0.35 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has 6 terminals, operates in ENHANCEMENT MODE, and offers a max Drain Current of 1A.
NTHS4501NT1
NTHS4501NT1 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 4.9A ID, and 0.038 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features SINGLE configuration with built-in diode in a RECTANGULAR package suitable for surface mount assembly.
4.9 A
.038 ohm
R-XDSO-C8
UNSPECIFIED
C BEND
NTF3055-100T3G
NTF3055-100T3G by Onsemi is a small signal FET with N-channel polarity. It features a max drain current of 3A, operating in enhancement mode for switching applications. With a package style of small outline and Gull Wing terminals, it offers a max power dissipation of 2.1W at an operating temperature of 175°C.
74 mJ
DRAIN
3 A
155 pF
TO-261AA
R-PDSO-G4
4
175 Cel
2.1 W
9 A
2N5460G
2N5460G by Onsemi is a P-CHANNEL FET with a max power dissipation of 0.35W. Ideal for amplifier applications, it operates in depletion mode with 3 terminals and a peak reflow temperature of 260°C. The transistor features a feedback capacitance of 2pF and is housed in a cylindrical package made of plastic/epoxy material.
SINGLE
JUNCTION
2 pF
DEPLETION MODE
135 Cel
FET General Purpose Small Signal
AMPLIFIER
NTGS4111PT1
NTGS4111PT1 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.06 ohm On Resistance and GULL WING terminals for surface mount assembly.
.06 ohm
.63 W
NOT SPECIFIED
NTHS4111PT1G
NTHS4111PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.045 ohm RDS(on), and 3.3A ID. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
3.3 A
.045 ohm
R-PDSO-C8
NTJS4151PT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 235; Package Shape: RECTANGULAR;
BSS123LT3G
BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.
.17 A
6 ohm
MGSF1N02ELT1G
MGSF1N02ELT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.085 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.
.75 A
.085 ohm
MGSF1N03LT3G
MGSF1N03LT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage. It is ideal for SWITCHING applications, featuring a max Drain Current of 1.6A and 0.1 ohm Drain-Source Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
1.6 A
.1 ohm
.42 W
MMBF2202PT1G
MMBF2202PT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 0.3A drain current, and 2.2 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150 °C. Package style is small outline with GULL WING terminals for surface mount assembly.
.3 A
2.2 ohm
MMFT2955ET1G
MMFT2955ET1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.3 ohm max drain-source resistance. Operating in enhancement mode, it has a max drain current of 1.2A and can handle up to 0.8W power dissipation at 150 °C.
AVALANCHE RATED
.8 W
NTHD5903T1G
NTHD5903T1G by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 2.2A, on-resistance of 0.155 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 2.1W power dissipation at a max temp of 150 °C, making it suitable for various electronic circuits.
2.2 A
.155 ohm
NTHS5404T1G
NTHS5404T1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 5.2A ID, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. This RECTANGULAR package has 8 terminals and built-in DIODE, making it suitable for high-power circuits.
5.2 A
.03 ohm
.7 W
NTHS5441T1G
NTHS5441T1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 3.9A Drain Current, and 0.06 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.
3.9 A
1.3 W
NTR4502PT3G
NTR4502PT3G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 1.95A and 0.2 ohm RDS(on), operating in enhancement mode at up to 150 °C. This small outline transistor with GULL WING terminals is designed for surface mount configurations.
ADG467BRZ
Analog Devices
ADG467BRZ by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It has 18 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95 ohm. Suitable for small outline packages requiring SILICON technology at up to 150°C.
.02 A
95 ohm
R-PDSO-G18
18
BFR30LT1G
BFR30LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 1.5pF Crss feedback capacitance. The transistor has a max power dissipation of 0.3W and can operate at temperatures up to 150°C.
1.5 pF
.3 W
BS107AG
BS107AG by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.25A Drain Current, and 6.4 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE. Package style is CYLINDRICAL with THROUGH-HOLE terminals.
200 V
.25 A
6.4 ohm
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