Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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NTR1P02T3G
Onsemi
NTR1P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.
SINGLE WITH BUILT-IN DIODE
20 V
1 A
.18 ohm
METAL-OXIDE SEMICONDUCTOR
TO-236AB
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
P-CHANNEL
.4 W
Not Qualified
Other Transistors
YES
Matte Tin (Sn)
GULL WING
DUAL
40
SWITCHING
SILICON
NTTS2P03R2G
NTTS2P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.1A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology. With a max temp of 150 °C, it has a small outline package style for efficient performance.
30 V
2.1 A
.085 ohm
S-PDSO-G8
8
SQUARE
1.78 W
TIN
30
BSS225
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOGIC LEVEL COMPATIBLE
DRAIN
600 V
.09 A
45 ohm
4.4 pF
R-PSSO-F3
N-CHANNEL
FET General Purpose Power
FLAT
SINGLE
TT8M2TR
ROHM
ROHM's TT8M2TR is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 2.5A and on-resistance of 0.09 ohm. Operating at up to 150°C, this MOSFET comes in a small outline package with 8 terminals.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
2.5 A
.09 ohm
R-PDSO-F8
2
N-CHANNEL AND P-CHANNEL
1.25 W
10
BSS84P-E6327
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
60 V
.17 A
8 ohm
3 pF
.36 W
2N5457G
2N5457G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 3 terminals and 0.31W power dissipation. With a max operating temperature of 150°C, it features a feedback capacitance of 3pF and uses Tin/Silver/Copper terminal finish.
LOW NOISE
25 V
JUNCTION
TO-92
O-PBCY-T3
e1
DEPLETION MODE
ROUND
CYLINDRICAL
.31 W
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
2N5638RLRAG
2N5638RLRAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 30 ohm Max RDS. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.31W Power Dissipation. Its ROUND package style and SILICON material make it suitable for various electronic circuits.
30 ohm
4 pF
TO-226AA
TIN SILVER COPPER
2N5639RLRAG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-609 Code: e1; No. of Terminals: 3;
60 ohm
BS108ZL1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 200 V; No. of Elements: 1;
200 V
.25 A
10 pF
.35 W
BS170RL1G
BS170RL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
EUROPEAN PART NUMBER
.5 A
5 ohm
BS170RLRMG
BS170RLRMG by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
BS170ZL1G
BS170ZL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring SINGLE configuration with BUILT-IN DIODE, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
BSR58LT1G
BSR58LT1G by Onsemi is a N-CHANNEL FET with 3 terminals in a small outline package. Operating in depletion mode, it has a max power dissipation of 0.35W and drain-source resistance of 60 ohm. Ideal for chopper applications, this transistor can withstand up to 150°C operating temperature.
5 pF
CHOPPER
J110RLRAG
Onsemi's J110RLRAG is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.31W and a max drain-source on resistance of 18 ohm. Ideal for SWITCHING applications due to its high feedback capacitance of 15pF and peak reflow temperature of 260°C.
18 ohm
15 pF
135 Cel
J111RL1G
J111RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max on resistance of 30 ohm, it has a feedback capacitance of 5pF and uses silicon as the transistor element material.
J111RLRAG
J111RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Featuring a max on resistance of 30Ω, this transistor has a cylindrical package style suitable for various electronic designs.
J111RLRPG
J111RLRPG by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35W and a max drain-source on resistance of 30 ohm. Ideal for CHOPPER applications due to its SILICON element material and low feedback capacitance of 5pF.
J112G
J112G by Onsemi is a N-CHANNEL FET with 3 terminals in a ROUND package. Operating in DEPLETION MODE, it has a max power dissipation of 0.4W and max drain-source resistance of 50 ohm. Ideal for CHOPPER applications due to its low feedback capacitance of 5pF and temp rating up to 150 °C.
50 ohm
J112RL1G
J112RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max drain-source resistance of 50 ohm. Its cylindrical package body is made of plastic/epoxy material.
J112RLRAG
J112RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max drain-source resistance of 50 ohm, this transistor has a cylindrical package shape.
MMDF2P02HDR2G
MMDF2P02HDR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.3A Drain Current. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.
3.3 A
.16 ohm
232 pF
R-PDSO-G8
-55 Cel
2 W
Tin (Sn)
MMDF3N04HDR2G
MMDF3N04HDR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 2W and can withstand temperatures up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
40 V
3.4 A
.08 ohm
96 pF
MPF4392G
MPF4392G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. With a max power dissipation of 0.625W and operating temperature of 150 °C, it is ideal for DEPLETION MODE operation in various electronic circuits.
3.5 pF
.625 W
MPF4393G
The Onsemi MPF4393G is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. This SINGLE configuration transistor operates in DEPLETION MODE with a max power dissipation of 0.625W at 150 °C.
100 ohm
NTMS3P03R2G
NTMS3P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.86A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a peak reflow temp of 260 °C and small outline package style, it offers high performance in various electronic devices.
AVALANCHE RATED
3.86 A
2.34 A
135 pF
.73 W
NTMS4503NR2G
NTMS4503NR2G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 9A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150 °C, it features a built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology.
28 V
9 A
.008 ohm
2.5 W
NTMS4700NR2G
NTMS4700NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.6A ID. Ideal for SWITCHING applications, it features 0.01 ohm RDS(on) and operates in ENHANCEMENT MODE. This GULL WING package has 8 terminals and can withstand peak reflow at 260 °C.
8.6 A
.01 ohm
NTMS4N01R2G
NTMS4N01R2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5.9A, 0.04ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers high performance in small outline packages.
5.9 A
.04 ohm
100 pF
.77 W
NTMSD3P102R2G
NTMSD3P102R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.34A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.085 ohm On Resistance and 135pF Feedback Capacitance.
NTMSD3P303R2G
NTMSD3P303R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and a RECTANGULAR package shape, it offers high performance in small outline designs at up to 150 °C operating temperature.
NUD3048MT1G
NUD3048MT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a built-in diode and resistor, operates in enhancement mode, and has a max drain current of 1.2A. With surface mount capability and small outline package style, it offers high performance in compact designs.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
100 V
1.2 A
.82 ohm
R-PDSO-G6
6
1.56 W
NUD3105DMT1G
NUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V breakdown voltage, 0.5A drain current, and 1.3 ohm on resistance. Ideal for surface mount designs in small outline packages at temperatures up to 150°C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
6 V
1.3 ohm
Matte Tin (Sn) - annealed
VN2410LZL1G
VN2410LZL1G by Onsemi is a N-CHANNEL FET with 240V DS breakdown voltage, 0.2A drain current, and 10 ohm on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
240 V
.2 A
10 ohm
20 pF
BSS84V-7
Diodes Incorporated
BSS84V-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max temp of 150°C. With 0.13A drain current and 10Ω on-resistance, it offers efficient performance in compact designs.
50 V
.13 A
12 pF
R-PDSO-F6
MATTE TIN
IPB80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;
55 V
80 A
.0065 ohm
TO-263AB
R-PSSO-G2
175 Cel
245
135 W
IPI80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Minimum DS Breakdown Voltage: 55 V; Package Style (Meter): IN-LINE;
.0068 ohm
TO-262AA
R-PSIP-T3
IN-LINE
IPP80N06S3-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 135 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0068 ohm;
TO-220AB
R-PSFM-T3
FLANGE MOUNT
NTA4153NT1
NTA4153NT1 by Onsemi is a small signal FET with N-CHANNEL polarity. It features a built-in diode and resistor, ideal for switching applications. With a max drain current of 0.915A and operating temperature of 150 °C, it offers efficient performance in a compact rectangular package.
.915 A
.23 ohm
e0
235
.3 W
TIN LEAD
NTA7002NT1
NTA7002NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, suitable for switching applications. With a max drain current of 0.154A and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
.154 A
7.5 ohm
6 pF
NTGD1100LT1G
NTGD1100LT1G by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 3.3A, on-resistance of 0.14 ohm, and breakdown voltage of 8V. The package is surface mountable with Gull Wing terminals in a rectangular shape, operating at up to 150°C.
COMPLEX
8 V
.14 ohm
.83 W
NTGD1100LT1
NTGD1100LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It features 8V DS Breakdown Voltage, 3.3A Drain Current, and 0.14ohm On Resistance. With Gull Wing terminals and a max temp of 150 °C, it's ideal for compact electronic designs requiring efficient power management.
NTJD1155LT1
NTJD1155LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 1.3A, on-resistance of 0.175 ohm, and operates at up to 150°C. The package is a small outline with Gull Wing terminals, made of metal-oxide semiconductor technology.
1.3 A
.175 ohm
Tin/Lead (Sn/Pb)
NTS4101PT1
NTS4101PT1 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 1.37A max drain current, and 0.12 ohm max on-resistance. With a small outline package and GULL WING terminals, it operates in enhancement mode up to 150 °C.
1.37 A
.12 ohm
85 pF
NOT SPECIFIED
.329 W
Tin/Lead (Sn80Pb20)
NTZD3152PT5G
NTZD3152PT5G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.43A ID, and 0.9 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor has 2 elements with built-in diode and operates in METAL-OXIDE SEMICONDUCTOR technology.
ESD PROTECTION, LOW THRESHOLD
.43 A
.9 ohm
NTZD3155CT5G
NTZD3155CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance. Ideal for surface mount designs in various electronic systems.
.54 A
.55 ohm
.25 W
NTZS3151PT5G
NTZS3151PT5G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 0.86A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, this MOSFET has 0.15 ohm Drain-Source On Resistance for efficient performance.
.86 A
.15 ohm
SI4567DY-T1-E3
Vishay Intertechnology
SI4567DY-T1-E3 by Vishay Intertechnology is a Small Signal FET with N/P-Channel, 2 elements, built-in diode for switching applications. Features include 40V DS breakdown voltage, 4.7A max drain current, 0.06 ohm max on resistance. Ideal for enhancement mode operation in surface mount designs at up to 150°C.
4.7 A
4.1 A
.06 ohm
2.95 W
FDG6332C_F085
Fairchild Semiconductor
FDG6332C_F085 by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It's used for switching applications in enhancement mode, with max drain current of 0.7A and on-resistance of 0.3Ω. The package is SOT-23 style, surface mountable, operating up to 150°C.
.7 A
.3 ohm
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