Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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PMBFJ110,215
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 15 pF;
SINGLE
25 V
18 ohm
JUNCTION
15 pF
TO-236AB
R-PDSO-G3
e3
1
3
DEPLETION MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.25 W
Not Qualified
Other Transistors
YES
TIN
GULL WING
DUAL
30
SWITCHING
SILICON
PMBFJ111,215
PMBFJ111,215 by NXP Semiconductors is a small signal N-channel FET with a min DS breakdown voltage of 40V. It is used for switching applications and operates in depletion mode. With a max power dissipation of 0.3W and a max operating temperature of 150°C, it offers reliable performance in various electronic devices.
40 V
30 ohm
.3 W
PMBFJ112,215
The NXP Semiconductors PMBFJ112,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 50 ohm max drain-source resistance. With a power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for depletion mode operation in various electronic circuits.
50 ohm
PMBFJ113,215
The NXP Semiconductors PMBFJ113,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 0.3W power dissipation in a PLASTIC/EPOXY package with GULL WING terminals. Operating in DEPLETION MODE, it has a max temperature of 150°C and an on-resistance of 100 ohm, making it suitable for various electronic circuits.
100 ohm
PMBFJ174,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; JESD-609 Code: e3;
30 V
85 ohm
P-CHANNEL
FET General Purpose Small Signal
PMBFJ175,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE;
125 ohm
PMBFJ176,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: TIN;
250 ohm
PMBFJ177,215
PMBFJ177,215 by NXP Semiconductors is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in depletion mode. This surface mount transistor has a max power dissipation of 0.3W and can withstand temperatures up to 150°C.
300 ohm
SI4420DY,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; Terminal Position: DUAL;
SINGLE WITH BUILT-IN DIODE
.0125 A
.009 ohm
METAL-OXIDE SEMICONDUCTOR
MS-012AA
R-PDSO-G8
8
ENHANCEMENT MODE
SI9410DY,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Element Material: SILICON;
7 A
.007 A
.03 ohm
2.5 W
FET General Purpose Power
AO3401
Alpha & Omega Semiconductor
AO3401 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 4A ID, 0.05 ohm RDS(on). This ENHANCEMENT MODE transistor has GULL WING terminals in a SMALL OUTLINE package.
4 A
.05 ohm
NOT SPECIFIED
AO3409
AO3409 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.6A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.11 ohm RDS(ON) and 37pF Crss.
2.6 A
.11 ohm
37 pF
AO3415
AO3415 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features a 1.4W Power Dissipation, -55 to 150 °C Operating Temperature, and METAL-OXIDE SEMICONDUCTOR technology. The SMALL OUTLINE package with GULL WING terminals makes it suitable for surface mount designs.
20 V
.054 ohm
110 pF
-55 Cel
1.4 W
30 A
MATTE TIN
AO4406AL
AO4406AL by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage. It features 13A ID, 0.0115 ohm RDS(on), and 100pF Crss. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE.
13 A
.0115 ohm
100 pF
AO4822
AO4822 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, 8A max ID, and 0.019 ohm max RDS(on). The small outline package with gull wing terminals makes it suitable for surface mount designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
8 A
.019 ohm
115 pF
2
MCH3377-TL-W
Onsemi
MCH3377-TL-W by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3A Drain Current, and 0.083 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with ENHANCEMENT MODE technology.
3 A
.083 ohm
R-PDSO-F3
e6
1 W
TIN BISMUTH
FLAT
NTMFS4847NAT3G
NTMFS4847NAT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 11.5A ID, and 0.0062 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. RECTANGULAR package with PLASTIC/EPOXY body material and TIN terminal finish for surface mount assembly.
DRAIN
11.5 A
.0062 ohm
R-PDSO-F5
5
2SK3377(0)-Z-E1-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 20 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
20 A
30 W
2SK3377(0)-Z-E2-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2SK3377-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 20 A;
60 V
.078 ohm
TO-252
R-PSSO-G2
2SK3377-Z-E2-AZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; JEDEC-95 Code: TO-252; No. of Elements: 1;
2SK3576-T1B-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
1.25 W
2SK3813-AZ
The Renesas Electronics 2SK3813-AZ is a N-CHANNEL FET with max ID of 60A and Pd of 84W. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial use where peak reflow temp reaches 260°C.
60 A
84 W
NO
10
2SK3813-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
UPA1804GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; No. of Elements: 1;
2 W
UPA1814GR-9JG-E1-A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
.027 ohm
UPA1815GR-9JG-E1-A
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; No. of Elements: 1;
MCH3474-TL-E
MCH3474-TL-E by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 4A ID, and 0.05 ohm RDS. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features ENHANCEMENT MODE operation in SMALL OUTLINE package suitable for surface mount assembly.
Tin/Bismuth (Sn/Bi)
MCH3477-TL-E
MCH3477-TL-E by Onsemi is a N-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic circuits requiring high power handling in compact designs.
4.5 A
NTGS3443T2G
NTGS3443T2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A ID. Ideal for SWITCHING applications, it features 0.065 ohm RDS(ON) and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and a built-in DIODE for efficient performance.
ULTRA LOW RESISTANCE
2.2 A
.065 ohm
R-PDSO-G6
6
Tin (Sn)
NTGS4111PT2G
NTGS4111PT2G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it features a 0.06 ohm on resistance and operates in enhancement mode. This small outline transistor has 6 terminals, GULL WING form, and built-in diode for efficient performance.
.06 ohm
2SJ325-AY
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
20 W
2SJ325-Z-AY
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
2SJ325-Z-E1-AZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 4 A;
PCP1403-TD-H
PCP1403-TD-H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 4.5A Drain Current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 3.5W. Suitable for surface mount designs in various electronic circuits.
.117 ohm
TO-243AA
R-PSSO-F3
3.5 W
2N6661JTXV02
Vishay Intertechnology
Vishay Intertechnology's 2N6661JTXV02 is a N-CHANNEL FET with 90V DS breakdown voltage and 0.86A max drain current. Ideal for switching applications, it features a built-in diode, 6.25W power dissipation, and operates in enhancement mode at up to 150°C.
LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
90 V
.86 A
4 ohm
10 pF
TO-205AD
O-MBCY-W3
METAL
ROUND
CYLINDRICAL
6.25 W
FET General Purpose Powers
WIRE
BOTTOM
NTGD3147FT1G
NTGD3147FT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.2A ID, and 0.145 ohm RDS(ON). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals.
.145 ohm
NTGD3149CT1G
NTGD3149CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 2.4A max drain current, and 0.06 ohm on-resistance. Ideal for surface mount designs requiring high performance in a compact square package.
2.4 A
S-PDSO-G6
SQUARE
N-CHANNEL AND P-CHANNEL
NTGD4169FT1G
NTGD4169FT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max Drain Current of 2.6A and Drain-Source On Resistance of 0.09 ohm. This ENHANCEMENT MODE transistor operates at up to 150 °C, making it suitable for various electronic devices.
.09 ohm
.9 W
NTHD2110TT1G
NTHD2110TT1G by Onsemi is a P-CHANNEL FET with 12V DS breakdown voltage and 4.5A max drain current. Ideal for switching applications, it features a 0.04 ohm on-resistance and comes in a small outline package with 8 terminals.
12 V
.04 ohm
R-PDSO-C8
C BEND
NTMD4184PFR2G
NTMD4184PFR2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 4A Drain Current, 0.095 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.31W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high performance in a small outline package.
2.3 A
.095 ohm
80 pF
2.31 W
NTMD6601NR2G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 2; No. of Terminals: 8;
80 V
1.1 A
.215 ohm
30 pF
NTMFS4846NT1G
NTMFS4846NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 100A Drain Current, and 0.0051 ohm On Resistance. Ideal for SWITCHING applications due to its 55.5W Power Dissipation, ENHANCEMENT MODE operation, and DUAL Terminal Position.
100 A
.0051 ohm
55.5 W
NTMFS4847NT1G
NTMFS4847NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0062 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at up to 150 °C, it's a high-power transistor in SMALL OUTLINE package.
85 A
48.1 W
NTMFS4849NT1G
NTMFS4849NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 71A Drain Current. Ideal for SWITCHING applications, it features 0.0079 ohm RDS(ON) and 42.4W Power Dissipation in a SMALL OUTLINE package.
71 A
.0079 ohm
42.4 W
NTMS4176PR2G
NTMS4176PR2G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 7.3A max drain current, and 0.018 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
7.3 A
5.5 A
.018 ohm
NTMS4872NR2G
NTMS4872NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 10.2A Drain Current, ideal for SWITCHING applications. It features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.4W. This small outline transistor has GULL WING terminals and can handle up to 150 °C operating temperature.
10.2 A
6 A
.0135 ohm
200 pF
2.4 W
NTR3161NT1G
NTR3161NT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 4A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150 °C.
3.3 A
Matte Tin (Sn)
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