Loading...

2N6661JTXV02

Vishay Intertechnology

2N6661JTXV02 by Vishay Intertechnology

Vishay Intertechnology's 2N6661JTXV02 is a N-CHANNEL FET with 90V DS breakdown voltage and 0.86A max drain current. Ideal for switching applications, it features a built-in diode, 6.25W power dissipation, and operates in enhancement mode at up to 150°C.

Median Price

$478.820

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 1 parts In-Stock

1+ parts

$478.820

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$478.820

-

-

-

Arrow

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$478.820

1k+ parts

-

10k+ parts

-

1

-

$478.820

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$557.060

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$557.060

-

-

-

Vyrian

USA . 17,577 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,577

-

-

-

-

VNN

France . 3,691 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,691

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 980 parts In-Stock

1+ parts

$0.659

100+ parts

-

1k+ parts

-

10k+ parts

-

980

$0.659

-

-

-

Aztec Data Supply Inc.

USA . 148 parts In-Stock

1+ parts

$1.074

100+ parts

-

1k+ parts

-

10k+ parts

-

148

$1.074

-

-

-

AZTECH Wire

Italy . 541 parts In-Stock

1+ parts

$15.576

100+ parts

-

1k+ parts

-

10k+ parts

-

541

$15.576

-

-

-

Semicontronic

India . 1 parts In-Stock

1+ parts

$407.000

100+ parts

$396.825

1k+ parts

$394.790

10k+ parts

-

1

$407.000

$396.825

$394.790

-

Continental Prestige Electronics

USA . 4,992 parts In-Stock

1+ parts

$557.060

100+ parts

-

1k+ parts

-

10k+ parts

$545.919

4,992

$557.060

-

-

$545.919

Argo Parts USA

USA . 2,755 parts In-Stock

1+ parts

$557.060

100+ parts

$551.489

1k+ parts

$545.919

10k+ parts

$540.348

2,755

$557.060

$551.489

$545.919

$540.348

Ampacity Inc.

Singapore . 1 parts In-Stock

1+ parts

$885.820

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$885.820

-

-

-

Overview

Discover the power of Vishay Intertechnology's 2N6661JTXV02 Small Signal Field Effect Transistor. This high-quality N-CHANNEL FET is designed for SWITCHING applications, offering a reliable and efficient solution for your electronic projects. With a built-in diode and a maximum operating temperature of 150°C, this transistor provides exceptional performance and versatility. Upgrade your circuits with the 2N6661JTXV02 and experience enhanced functionality and reliability like never before.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good heat dissipation, ensuring stable performance and long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower on-resistance and higher electron mobility, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for protection against reverse currents, enhancing the durability and versatility of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in various electronic circuits.

Minimum DS Breakdown Voltage: 90 V

High breakdown voltage allows for handling higher voltages, making this transistor suitable for power applications.

Maximum Drain Current: 0.86 A

Capable of handling relatively high drain currents, making it suitable for medium-power applications.

Maximum Power Dissipation: 6.25 W

High power dissipation rating ensures the transistor can handle power surges or continuous operation without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high speed and low power consumption, ideal for efficient switching applications.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, making it suitable for a variety of environmental conditions.

Maximum Drain-Source On Resistance: 4 ohm

Low on-resistance ensures minimal power loss and heat generation, contributing to efficient operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N6661JTXV02 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

90 V

Maximum Drain Current (Abs) (ID):

.86 A

Maximum Drain Current (ID):

.86 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N6661JTXV02 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20