Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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NTR3162PT1G
Onsemi
NTR3162PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.2A Drain Current, 0.07 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.25W and operating temperature up to 150 °C, it is suitable for various electronic designs requiring high performance in a small outline package.
SINGLE WITH BUILT-IN DIODE
20 V
2.2 A
.07 ohm
METAL-OXIDE SEMICONDUCTOR
TO-236AB
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
P-CHANNEL
1.25 W
Not Qualified
Other Transistors
YES
Matte Tin (Sn)
GULL WING
DUAL
SWITCHING
SILICON
NTR3162PT3G
NTR3162PT3G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.2A and 0.07 ohm on-resistance, operating in enhancement mode at up to 150 °C. This small outline transistor with gull wing terminals is designed for high power dissipation of 1.25W in surface mount configurations.
NTR4170NT3G
NTR4170NT3G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A max drain current, and 0.055 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at up to 150 °C, making it suitable for various electronic devices.
30 V
3.2 A
.055 ohm
N-CHANNEL
FET General Purpose Power
Tin (Sn)
NTR4171PT3G
NTR4171PT3G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.2A Drain Current, 0.075 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and can handle up to 150 °C temperature.
.075 ohm
DMN55D0UT-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): 30;
HIGH RELIABILITY
50 V
.16 A
4 ohm
260
.2 W
MATTE TIN
30
SI2334DS-T1-GE3
Vishay Intertechnology
SI2334DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 4.9A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.044 ohm on-resistance. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.
4.9 A
.044 ohm
TO-236
1.7 W
FET General Purpose Powers
SQ2309ES-T1_GE3
The Vishay Intertechnology SQ2309ES-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 1.7A max drain current. Ideal for applications requiring small outline, it operates in enhancement mode with 0.335 ohm RDS(on) and features built-in diode in a gull wing package.
60 V
1.7 A
.335 ohm
30 pF
175 Cel
40
FDS2672_F085
Fairchild Semiconductor
FDS2672_F085 by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 3.9A Drain Current, and 0.07 ohm On Resistance. With an operating temperature of up to 150°C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
200 V
3.9 A
45 pF
R-PDSO-G8
8
2.5 W
FDS6673BZ_F085
FDS6673BZ_F085 by Fairchild Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 14.5A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0078 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.
14.5 A
.0078 ohm
900 pF
e4
NICKEL PALLADIUM GOLD
NTMFS4921NT3G
NTMFS4921NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.0088A ID, and 0.0108 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Its RECTANGULAR package with 5 terminals is suitable for surface mount assembly.
DRAIN
.0088 A
.0108 ohm
R-PDSO-F5
5
TIN
FLAT
DMG3415UFY4-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .49 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .039 ohm;
16 V
2.5 A
.039 ohm
R-PDSO-N3
.49 W
NO LEAD
DMG4468LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .99 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-N5;
7.62 A
.015 ohm
R-PDSO-N5
.99 W
NTTFS4928NTWG
NTTFS4928NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 37A Drain Current, and 0.0135 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150 °C max temp.
37 A
7.3 A
.0135 ohm
S-PDSO-F5
SQUARE
20.8 W
Matte Tin (Sn) - annealed
NTGS3455T1
The Onsemi NTGS3455T1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.1 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and can withstand temperatures up to 150 °C.
1.75 A
.1 ohm
R-PDSO-G6
e0
6
240
.5 W
Tin/Lead (Sn80Pb20)
NTHD5904T1
NTHD5904T1 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 3.1A, on-resistance of 0.075 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 150 °C operating temperature, making it suitable for various electronic devices.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
3.1 A
R-XDSO-C8
2
UNSPECIFIED
235
.6 W
TIN LEAD
C BEND
NTHD5905T1
NTHD5905T1 by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode for switching applications. Features include 8V DS breakdown voltage, 3A max drain current, and 0.09 ohm max on resistance. Ideal for small outline packages in enhancement mode operation up to 150 °C.
8 V
3 A
.09 ohm
NTHS5402T1
NTHS5402T1 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 4.9A ID, and 0.035 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. This RECTANGULAR package has 8 terminals and built-in diode, suitable for surface mount technology.
.035 ohm
.7 W
NTHS5443T1
NTHS5443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.6A Drain Current, and 0.065 ohm On Resistance. Ideal for small outline packages with operating temperature up to 150 °C.
LOGIC LEVEL COMPATIBLE
3.6 A
.065 ohm
NTHS5445T1
NTHS5445T1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 5.2A Drain Current, and 0.035 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR package with DUAL terminals is designed for high-power efficiency in various electronic devices.
5.2 A
NTMS3P03R2
NTMS3P03R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 3.86A Drain Current, and 0.085 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET in PLASTIC/EPOXY package is ideal for high-power switching circuits.
AVALANCHE RATED
3.86 A
2.34 A
.085 ohm
135 pF
.73 W
NTMSD3P102R2
NTMSD3P102R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers reliable performance in small outline packages at up to 150 °C.
2 W
Tin/Lead (Sn/Pb)
NTQD6866R2
NTQD6866R2 by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.032ohm max on resistance and can handle up to 0.78W power dissipation at 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
6.9 A
4.7 A
.032 ohm
175 pF
.78 W
NTQS6463R2
NTQS6463R2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 6.2A, 0.02 ohm RDS(on), and operates in ENHANCEMENT MODE. This RECTANGULAR package has GULL WING terminals and can withstand up to 150 °C operating temperature.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
6.2 A
5.5 A
.02 ohm
.67 W
NTTS2P03R2
NTTS2P03R2 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 2.1A, 0.085 ohm RDS(on), and operates in enhancement mode. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150°C.
2.1 A
S-PDSO-G8
NTTD1P02R2
NTTD1P02R2 by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1.45A max drain current, and 0.16 ohm max on resistance. Ideal for switching applications, it features a small outline package with GULL WING terminals and operates in enhancement mode up to 150 °C.
1.45 A
.16 ohm
BSS670S2L
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 55 V; Maximum Operating Temperature: 150 Cel;
55 V
.54 A
.825 ohm
10 pF
.36 W
BSS84PW
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Terminal Form: GULL WING;
.15 A
8 ohm
3.8 pF
.3 W
STN1NF10
STMicroelectronics
STN1NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With max Drain Current of 1A and Power Dissipation of 2.5W, it offers reliable performance in small outline packages at temperatures ranging from -55 to 150°C.
100 V
1 A
.8 ohm
R-PDSO-G4
4
-55 Cel
RK7002AT116
ROHM
ROHM RK7002AT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A max drain current, and 1.5 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating in enhancement mode at up to 150°C, it offers efficient performance in various electronic devices.
.3 A
1.5 ohm
e1
TIN SILVER COPPER
BSS209PW
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .52 W; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260;
.58 A
.55 ohm
.52 W
ADG465BRM-REEL7
Analog Devices
ADG465BRM-REEL7 by Analog Devices is a Small Signal FET with N/P-Channel, 3 elements in series. It operates in enhancement mode for switching applications. With max ID of 0.02A and RDS(on) of 115Ω, it's ideal for surface mount designs requiring dual terminals.
SERIES, 3 ELEMENTS
.02 A
115 ohm
N-CHANNEL AND P-CHANNEL
ADG465BRT-REEL
ADG465BRT-REEL by Analog Devices is a Small Signal FET with N/P-Channel types, 3 elements in series. It operates in enhancement mode for switching applications. With a max ID of 0.02A and RDS(on) of 115Ω, it's ideal for surface mount designs requiring dual terminals.
ADG467BR-REEL
ADG467BR-REEL by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It features 18 terminals, ENHANCEMENT MODE operation, and 95 ohm max on-resistance. With a max operating temp of 150°C, it's ideal for small outline packages in surface mount configurations.
95 ohm
R-PDSO-G18
18
FDS4770
FDS4770 by Fairchild Semiconductor is a N-CHANNEL FET with a min DS Breakdown Voltage of 40V. It is used for SWITCHING applications and has a max Drain Current (ID) of 13.2A.
40 V
13.2 A
.0075 ohm
BSS138-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 3.5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.2 A
3.5 ohm
8 pF
.225 W
BSS123-7
Diodes Inc. BSS123-7 is a N-channel FET with 100V DS breakdown voltage, 0.17A drain current, and 6ohm on-resistance. Ideal for switching applications in small outline packages, operating from -55 to 150°C with Gull Wing terminals.
.17 A
6 ohm
6 pF
BSA223SP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
.39 A
1.2 ohm
22 pF
.25 W
BSD223P
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Element Material: SILICON; Terminal Finish: TIN;
DMT6016LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Finish: NICKEL PALLADIUM GOLD; Terminal Position: DUAL;
8.9 A
.016 ohm
S-PDSO-N6
BSS123W-7
BSS123W-7 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
BSS84-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain-Source On Resistance: 10 ohm; Maximum Drain Current (ID): .13 A;
.13 A
10 ohm
12 pF
BSS138W-7
BSS138W-7 by Diodes Inc. is a N-channel FET with 50V breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.
UL RECOGNIZED
2N7002-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): .115 A;
.115 A
7.5 ohm
5 pF
2N7002DW-7
2N7002DW-7 by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A max drain current, and 7.5 ohm on-resistance. Ideal for switching applications due to its separate dual-element configuration and built-in diode. Features small outline package style, Gull Wing terminals, and metal-oxide semiconductor technology for efficient performance in enhancement mode operation.
BS870-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
.25 A
5 ohm
BSS138DW-7
BSS138DW-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm max on resistance. Ideal for switching applications, it features a small outline package with Gull Wing terminals and operates in enhancement mode up to 150°C.
10
BSS84DW-7
BSS84DW-7 by Diodes Incorporated is a P-channel FET with 50V breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a small outline package, Gull Wing terminals, and 10 ohm on-resistance. Operating in enhancement mode at up to 150°C, this MOSFET has dual terminals and built-in diode elements.
BSS84W-7
BSS84W-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode at up to 150°C.
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