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STN1NF10

STMicroelectronics

STN1NF10 by STMicroelectronics

STN1NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With max Drain Current of 1A and Power Dissipation of 2.5W, it offers reliable performance in small outline packages at temperatures ranging from -55 to 150°C.

Median Price

$0.508

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.508

100+ parts

-

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50

$0.508

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Chip Stock

USA . 18,278 parts In-Stock

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18,278

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Vyrian

USA . 4,114 parts In-Stock

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4,114

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Goldney Electronics S.L.

Spain . 3,094 parts In-Stock

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3,094

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Digiode

USA . 1,925 parts In-Stock

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1,925

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Sea View Technologies

USA . 1,863 parts In-Stock

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Bristol Electronics

USA . 1,408 parts In-Stock

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1,408

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Dan-Mar Components

USA . 1,408 parts In-Stock

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1,408

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Anansix

USA . 179 parts In-Stock

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179

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J2 Sourcing AB

Sweden . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 86 parts In-Stock

1+ parts

$0.298

100+ parts

-

1k+ parts

$0.268

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86

$0.298

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$0.268

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.498

100+ parts

-

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$0.478

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100

$0.498

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$0.478

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MKK Technologies

India . 1,244 parts In-Stock

1+ parts

$0.561

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1,244

$0.561

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DigiPath Technology Company

USA . 1,244 parts In-Stock

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$0.561

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1,244

$0.561

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AZTECH Wire

Italy . 578 parts In-Stock

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$11.374

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578

$11.374

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Ampacity Inc.

Singapore . 1,391 parts In-Stock

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$57.050

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$57.050

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Kepictronics

USA . 20,000 parts In-Stock

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Corphita

USA . 4,437 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,896 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,871 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,000 parts In-Stock

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Parana Technologies

USA . 983 parts In-Stock

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$0.356

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983

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$0.356

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Assy Fe

Spain . 77 parts In-Stock

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77

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Overview

Enhance your electronic projects with the STN1NF10 Small Signal Field Effect Transistor by STMicroelectronics. Manufactured with top-quality materials and advanced technology, this N-channel transistor offers reliable performance in switching applications. With a built-in diode and a maximum power dissipation of 2.5W, this transistor provides efficient operation and durability. Whether you're designing consumer electronics or industrial equipment, the STN1NF10 delivers value, benefits, and advantages that meet your needs. Trust STMicroelectronics for cutting-edge solutions that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this FET lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance compared to P-channel FETs, making this a good choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

The surface mount capability allows for easy and efficient mounting on PCBs.

Minimum DS Breakdown Voltage: 100 V

The high breakdown voltage ensures durability and reliability in high-voltage applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of PCB space.

Terminal Form: GULL WING

The gull wing terminal form provides robust connections on the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer improved efficiency and performance in various applications.

Maximum Drain Current (Abs) (ID): 1 A

With a maximum drain current of 1 A, this FET can handle moderate power loads effectively.

No. of Terminals: 4

The four terminals provide flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 2.5 W

The high maximum power dissipation rating ensures the FET can handle power surges without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-saving and ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency and low power consumption.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand harsh environmental conditions.

Transistor Element Material: SILICON

Silicon FETs offer good thermal conductivity and high electrical performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for use in a wide range of environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance.

Maximum Drain Current (ID): 1 A

With a maximum drain current of 1 A, this FET can handle moderate power loads effectively.

Maximum Drain-Source On Resistance: 0.8 ohm

The low drain-source on resistance ensures efficient power handling and minimal power loss.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and connection options.

Case Connection: DRAIN

The drain case connection simplifies circuit design and helps to dissipate heat efficiently.

Technical Specifications

Small Signal Field Effect Transistors (FET) STN1NF10 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STN1NF10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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