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STMicroelectronics Small Signal Field Effect Transistors (FET) 15

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STL3NK40 by STMicroelectronics

STL3NK40

STMicroelectronics

STL3NK40 by STMicroelectronics is a N-CHANNEL FET with 400V DS breakdown voltage. It operates in enhancement mode, has 4 terminals, and features a built-in diode. Ideal for switching applications due to low 5.5 ohm RDS(on) and small outline package style.

AVALANCHE RATED

DRAIN

SINGLE WITH BUILT-IN DIODE

400 V

5.5 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STS4DPFS30L by STMicroelectronics

STS4DPFS30L

STMicroelectronics

STS4DPFS30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max operating temperature of 150 °C.

SINGLE WITH BUILT-IN DIODE

30 V

4 A

4 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STN3PF06 by STMicroelectronics

STN3PF06

STMicroelectronics

STN3PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 2.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150 °C.

AVALANCHE ENERGY RATED

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2.5 A

2.5 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

STP60NH2LL by STMicroelectronics

STP60NH2LL

STMicroelectronics

STP60NH2LL by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it has 0.0135 ohm On Resistance and operates at up to 150 °C.

LOW THRESHOLD

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

40 A

40 A

.0135 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

N-CHANNEL

60 W

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

40

SWITCHING

SILICON

STN1NF10 by STMicroelectronics

STN1NF10

STMicroelectronics

STN1NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With max Drain Current of 1A and Power Dissipation of 2.5W, it offers reliable performance in small outline packages at temperatures ranging from -55 to 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

1 A

1 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STT4PF20V by STMicroelectronics

STT4PF20V

STMicroelectronics

STT4PF20V by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 3 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

20 V

3 A

3 A

.135 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STS1HNK60 by STMicroelectronics

STS1HNK60

STMicroelectronics

STS1HNK60 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 0.3A max drain current. It comes in a compact rectangular package with gull-wing terminals. This MOSFET operates efficiently at up to 150 °C.

SINGLE WITH BUILT-IN DIODE

600 V

.3 A

.3 A

8.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STL20NM20N by STMicroelectronics

STL20NM20N

STMicroelectronics

STL20NM20N by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 20A ID, and 0.105 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 80W power dissipation and -55 to 150°C operating temperature range.

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

20 A

20 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-N8

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

FET General Purpose Power

YES

NO LEAD

DUAL

SWITCHING

SILICON

STT5PF20V by STMicroelectronics

STT5PF20V

STMicroelectronics

STT5PF20V by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

5 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STC5NF30V by STMicroelectronics

STC5NF30V

STMicroelectronics

STC5NF30V by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for compact designs with its surface mount configuration.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

5 A

5 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.5 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STS10PF30L by STMicroelectronics

STS10PF30L

STMicroelectronics

STS10PF30L by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 10 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

SINGLE WITH BUILT-IN DIODE

30 V

10 A

.01 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2.5 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STS3C2F100 by STMicroelectronics

STS3C2F100

STMicroelectronics

STS3C2F100 by STMicroelectronics is a dual N/P-channel FET designed for efficient switching applications. It features a max drain current of 3 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100 V

1.5 A

3 A

.145 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

2 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

STS8DNH3LL by STMicroelectronics

STS8DNH3LL

STMicroelectronics

STS8DNH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

8 A

8 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

40

SWITCHING

SILICON

STS5DPF20L by STMicroelectronics

STS5DPF20L

STMicroelectronics

STS5DPF20L by STMicroelectronics is a P-channel MOSFET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates in enhancement mode. Its compact SO8 package ensures efficient surface mounting.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

5 A

5 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

STS8C5H30L by STMicroelectronics

STS8C5H30L

STMicroelectronics

STS8C5H30L by STMicroelectronics is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has 30V DS breakdown voltage, 4.2A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Package: SO-8, surface mountable with Gull Wing terminals.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

4.2 A

8 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON