Loading...

STL20NM20N

STMicroelectronics

STL20NM20N by STMicroelectronics

STL20NM20N by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 20A ID, and 0.105 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 80W power dissipation and -55 to 150°C operating temperature range.

Median Price

$1.016

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.016

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$1.016

-

-

-

Vyrian

USA . 4,266 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,266

-

-

-

-

Digiode

USA . 3,007 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,007

-

-

-

-

ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Euro-Tech

UK . 1,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,125

-

-

-

-

Anansix

USA . 917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

917

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 424 parts In-Stock

1+ parts

$1.477

100+ parts

-

1k+ parts

$1.329

10k+ parts

-

424

$1.477

-

$1.329

-

MKK Technologies

India . 498 parts In-Stock

1+ parts

$2.777

100+ parts

-

1k+ parts

-

10k+ parts

-

498

$2.777

-

-

-

DigiPath Technology Company

USA . 498 parts In-Stock

1+ parts

$2.777

100+ parts

-

1k+ parts

-

10k+ parts

-

498

$2.777

-

-

-

Ampacity Inc.

Singapore . 218 parts In-Stock

1+ parts

$9.050

100+ parts

-

1k+ parts

-

10k+ parts

-

218

$9.050

-

-

-

AZTECH Wire

Italy . 728 parts In-Stock

1+ parts

$10.399

100+ parts

-

1k+ parts

-

10k+ parts

-

728

$10.399

-

-

-

Alle Elektronik GmbH

Germany . 4,994 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,994

-

-

-

-

Corphita

USA . 4,487 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,487

-

-

-

-

Kepictronics

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Parana Technologies

USA . 1,969 parts In-Stock

1+ parts

-

100+ parts

$1.766

1k+ parts

-

10k+ parts

-

1,969

-

$1.766

-

-

Perfect Parts

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Overview

Boost your electronics projects with the high-quality STL20NM20N by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers reliable products that meet the demands of today's technology. This small signal field effect transistor offers enhanced performance for switching applications, providing customers with a versatile and efficient solution. With a maximum drain current of 20A and a breakdown voltage of 200V, the STL20NM20N is suitable for a wide range of projects. Trust STMicroelectronics to deliver top-notch components that bring value and innovation to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have faster switching speeds and higher input impedance, making them ideal for switching applications.

Minimum DS Breakdown Voltage: 200 V

With a high breakdown voltage, this transistor can handle higher voltages, enhancing its reliability in switching applications.

Maximum Power Dissipation (Abs): 80 W

The high power dissipation capability of this transistor allows it to handle large amounts of power without overheating.

Maximum Drain Current (Abs): 20 A

The high drain current rating makes this transistor suitable for applications that require high current switching.

Maximum Drain-Source On Resistance: 0.105 ohm

The low on-resistance of this transistor results in efficient power handling and minimal power loss during operation.

Maximum Operating Temperature: 150 °C

This transistor can operate at high temperatures without failing, making it suitable for various industrial environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) STL20NM20N attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.105 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-N8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL20NM20N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1