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STS10PF30L

STMicroelectronics

STS10PF30L by STMicroelectronics

STS10PF30L by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 10 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,104 parts In-Stock

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Anansix

USA . 2,408 parts In-Stock

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2,408

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Digiode

USA . 2,085 parts In-Stock

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2,085

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Bristol Electronics

USA . 1,280 parts In-Stock

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1,280

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Speed Components Ltd

Israel . 76 parts In-Stock

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IDEA Electronic Components Group

UK . 103 parts In-Stock

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$1.457

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$1.312

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103

$1.457

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$1.312

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MKK Technologies

India . 912 parts In-Stock

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$2.740

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912

$2.740

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DigiPath Technology Company

USA . 912 parts In-Stock

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$2.740

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912

$2.740

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AZTECH Wire

Italy . 1,112 parts In-Stock

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$12.780

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$12.780

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Kepictronics

USA . 10,002 parts In-Stock

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Perfect Parts

USA . 4,484 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,060 parts In-Stock

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Corphita

USA . 3,653 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,002 parts In-Stock

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Parana Technologies

USA . 599 parts In-Stock

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$1.742

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599

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$1.742

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Overview

Unlock new levels of efficiency with the STS10PF30L from STMicroelectronics, renowned for their commitment to quality and innovation. This P-channel small signal FET is designed for seamless switching applications, ensuring reliability in demanding environments. With its compact surface-mount design and superior thermal performance, it’s perfect for enhancing your circuits' functionality while minimizing space. Elevate your projects with a trusted component that delivers exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures protection against environmental factors, making the FET reliable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for high-side switching applications, allowing for better load management.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances efficiency and simplifies circuit design by integrating two functionalities in one component.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures fast operation and effective control in electronic circuits.

Surface Mount: YES

Surface mount technology allows for compact designs, facilitating higher density layouts in modern electronics.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V provides adequate protection against voltage spikes, ensuring long-term reliability.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient, making it suitable for various compact electronic applications.

Terminal Form: GULL WING

Gull wing leads provide excellent soldering surface and ease of mounting, enhancing mechanical stability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows for lower off-state current, making this FET an energy-efficient choice for applications.

Maximum Drain Current (Abs) (ID): 10 A

With a high maximum drain current capability, this FET can handle significant loads, making it versatile for power management.

No. of Terminals: 8

Eight terminals offer flexibility in circuit design, allowing for more connections and functionalities in applications.

Maximum Power Dissipation (Abs): 2.5 W

A maximum power dissipation rating of 2.5 W ensures that the FET can handle power demands without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for easy integration into space-constrained circuits, appealing for compact devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making it ideal for sensitive applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliability in demanding environments, suitable for automotive and industrial applications.

Transistor Element Material: SILICON

Silicon is a standard semiconductor material offering good thermal stability and performance, enhancing overall circuit reliability.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent corrosion resistance and ensures reliable electrical connections, enhancing durability.

Maximum Drain Current (ID): 0.01 A

Although the absolute maximum drain current is higher, the specified operational current suits low-power applications effectively.

Maximum Drain-Source On Resistance: 0.018 ohm

Low on-resistance minimizes power losses during operation, contributing to efficient power management in circuits.

Terminal Position: DUAL

A dual terminal position offers flexibility in layout design and enhances the overall performance of the device.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS10PF30L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

.01 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS10PF30L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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